ZVN2120A Search Results

ZVN2120A

Abstract: DSA003782
Contextual Info: ZVN2120A ID on -On-State Drain Current (Amps) ID(on) -On-State Drain Current (Amps) VGS=10V 8V 7V 6V 1.6 1.2 5V 0.8 4V 0.4 3V 2V 10 20 30 40 50 1.4 1.2 VGS= 10V 0.8 0.4 2V 4 0.5A 0.1A 6 8 10 ID(On)-On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts)

Contextual Info: Not Recommended for New Design Please Use ZVN2110A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN2120C ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =10Ω G D S E-Line TO92 Compatible REFER TO ZVN2120A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER

ZVN2120A

Abstract: fet to92 ZVN2120C
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN2120C ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =10Ω G D S E-Line TO92 Compatible REFER TO ZVN2120A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE 200 UNIT V

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSUE 2 -M A R C H 94_ FEATURES 200 Volt VDS R D S o n r1 0 i î REFER TO ZVN2120A FOR GRAPHS ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L VALUE UNIT Drain-Source Voltage V DS 200 V

ZVN2120A

Contextual Info: Obsolete. Alternative is ZVN0124A. ZVN2120A ID on -On-State Drain Current (Amps) ID(on) -On-State Drain Current (Amps) VGS=10V 8V 7V 6V 1.6 1.2 5V 0.8 4V 0.4 3V 2V 10 20 30 40 50 1.4 1.2 VGS= 10V 0.8 0.4 2V 4 0.5A 0.1A 6 8 10 ID(On)-On-State Drain Current (Amps)

Contextual Info: ZVN2120A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)180m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC)

Contextual Info: DISCONTINUED PLEASE USE ZVN2110A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN2120C ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =10Ω G D S E-Line TO92 Compatible REFER TO ZVN2120A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

complementary MOSFET TO252

Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
Contextual Info: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and

DMG1012

Abstract: ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8
Contextual Info: DIO 1931 MOSFET brochure Final Artwork extra amends 13/1/10 11:51 Page 1 MOSFETs www.diodes.com DIO 1931 MOSFET brochure (Final Artwork extra amends) 13/1/10 11:51 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS

ZVN0545G

Abstract: ZVN3320A ZVN3320F ZVN0120A ZVN0545A ZVN253 bs107p ZVN0545 ZVN2535A e-line
Contextual Info: Section 3: MOSFETs N-Channel Devices BVdss from 3 00 V to 450V Typical application areas for this range of devices include Power Supplies, Converters, Telecom Switches, M otor Control and High Voltage Driver circuits Part No. •d B V D SS V GS th •d m

zvn2110b

Abstract: ZVN3306B
Contextual Info: SELECTION TABLES TABLE 1: N-CHANNEL SM ALL SIGNAL M OSFETS Part number B V 0ss 'dm V G S th| V V mA A Min. Pd ^ D S Io n l at In Max. mA S2 at lD mA Max. Package V GS V w ZVN0545A* 450 90 0.6 1 3 1 50 100 10 0.7 E-line ZVN0545B 450 150 0.6 1 3 1 50 100 10

FERRANTI

Abstract: IRFZ32 VN10LP ZVNO12 IRFZ30 ZVN2106 ZVN2106A IRFZ20 IRFZ22 ZVN0120A
Contextual Info: - 245 /m Ta=25l3 Vds or % Vd g Vg s !l (V) (V) t £J € *± € m Vg s (V) C M A) N N N N N N N N N 200 ± 2 0 200 ± 2 0 240 ± 2 0 240 ± 2 0 240 ± 2 0 350 ± 2 0 N N N N N N N N N 400 400 450 90 60 60 60 100 100 100 200 200 200 60 60 100 5 ±20 ±20

ZTX752 equivalent

Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request

ZVN2120

Abstract: ZVN2120B
Contextual Info: plessey s e n i c o n d /d i s c r e t e 7220533 "t5 PLESSEY SEMICOND/DI SCRETE d F | ? 22GS33 □□□Sbbl □ 95D 0 5 6 6 1 T- N-channel enhancement mode vertical DMOS FET 3J-o? ZVN2120 FEATU RES • Com pact geometry • Fast sw itching speeds • No secondary breakdown

ZVN3320F

Contextual Info: 150 - 450 Volt MOSFETs A series of high voltage M O SFETs fo r lo w current sw itching applications. Typical applications include:- • Off-line switching * Telephone line switching • Hook switches N-Channel 150 - 450 Volt MOSFETs Polarity BVqsS •d V A

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M A R C H 94_ FEATURES * 200 V o lt VDS * R DS on = 1 0 ß ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VALUE UNIT V VDS 200 Continuous Drain Current a tT amtj=25°C

Contextual Info: bGE D • WUST* DD07Ô3S *17 4 ZETEX SEMICONDUCTORS N-channel enhancement mode vertical DMOS FET ZVN2120 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance • Low current drive

2106a

Abstract: BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019
Contextual Info: CROSS R EF ER E N C E LIST Industry Part No. Zetex Suggested Replacem ent 2N 6659 2N 6660 2N6661 ZVN2106B ZVN2106B ZVN2110B 2N 7000 2N7001 2N7002 2N7007 2N 7008 2N 7019 2N 7025 2N 7000 ZVN3320F 2N 7002 ZVN3320A ZVN3306A ZVP3306F ZVP2106A BS107 BS107A BS108

ZVN4306A

Abstract: ZVP4424
Contextual Info: E-LINE MOSFETS TABLE 18 : SMALL SIGNAL MOSFETS This com prehensive range of M OSFET's is optim ised for low on-resistance w hilst m aintaining a fast switching perform ance. Application areas vary from dialler circuits in electronic telephones, autom otive

VN10LP

Abstract: ZVN4206A ZVN0545A ZVN2106A ZVNL110A ZVN0124A ZVN0124B ZVN0535A ZVN0540A ZVN0540B
Contextual Info: SELECTION TABLES TABLE 1: N-CHANNEL SMALL SIGNAL MOSFETS Part number B V DSS 'd *DM V GS th J V mA A Min. at Max. Pd R DS(on> 'd mA fi at lD mA Max. Package V GS V w ZVN0545A* 450 90 0.6 1 3 1 50 100 10 0.7 E-line ZVN0545B 450 150 0.6 1 3 1 50 100 10 5 TO-39

VN10LP

Abstract: ZVN3306 ZVN3320 ZVN4106 ZVN2106A ZVN4206A ZVN0124A ZVN0124B ZVN0535A ZVN0540A
Contextual Info: SELECTION TABLES TABLE 1: N-CHANNEL SM A L L SIG N A L M O SF ET S Part number B V DSS 'd *DM V GS th J V mA A Min. Pd R DS(on> at ' d mA Max. fi at lD mA Max. Package V GS V w ZVN0545A* 450 90 0.6 1 3 1 50 100 10 0.7 E-line ZVN0545B 450 150 0.6 1 3 1 50