BS107P Search Results

Contextual Info: BS107P Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)120m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC)

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - SEPT 93 FEATURES * 200 Volt VDS * R DS on =23£i REFER TO BS107PT FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 200 V Continuous Drain Current at Tarnij=25°C

Contextual Info: N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET BS107P ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS * RDS on =23Ω D G REFER TO BS107PT FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PARAM ETER SYM BOL VALUE UNIT Drain-Source Voltage VDS 200

DEVICE MARKING ZVN

Abstract: BSS138S 2N7001
Contextual Info: ZETEX SEM ICO NDUCTORS IbE D • ^70576 0Q0bflS4 3 ■ ZETB MOSFETS SPECÌFiCATÌONS — —P N-CHANIMEL SM ALL SIGNAL M OSFETS Part number ZVN0545A* ZVN0545B ZVN0540A* ZVN0540B ZVN2535A ZVN2535B ZVN0535A* ZVN 0124A ZVN0124B ZVN 2120A ZVN2120B BS107P BS107PT

BS107PT

Abstract: DSA0037518
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS107PT TYPICAL CHARACTERISTICS ID On -On-State Drain Current (Amps) ID(On) - On-State Drain Current (Amps) 1.2 VGS= 10V 6V 1.0 0.8 0.6 4V 0.4 0.2 3V 20 40 60 80 100 0.4 ABSOLUTE MAXIMUM RATINGS. VDS-Drain Source Voltage (Volts)

1RF620

Abstract: 1RF540 1RF630 1RF640 1RF530 1RF520 IRF625 RF543 BS250F BS107PT
Contextual Info: - 244 - f ä! SD210 SD211 SD212 S0213 S02T4 SD215 SD211 SD219 BS107P BSI07PT BSUOF BS17ÜP DS250F BS250P 1RF 520 IRF521 IRF522 IRF523 IRF530 IRF531 IRF532 IRF533 IRF620 IRF621 IRF622 IRF623 IRF630 IRF631 1RF632 IRF633 € tt € CALOGIC CALOGIC CALOGIC CALOGIC

Contextual Info: BS107PT Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)120m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC)

IRF413

Abstract: 1RF530 IRF449 IRF460 RF543 samsung irf540 1RF540 1RF620 irf362 IRF448
Contextual Info: - 244 - f ä! SD210 SD211 SD212 S0213 S02T4 SD215 SD211 SD219 BS107P BSI07PT BSUOF BS17ÜP DS250F BS250P 1RF 520 IRF521 IRF522 IRF523 IRF530 IRF531 IRF532 IRF533 IRF620 IRF621 IRF622 IRF623 IRF630 IRF631 1RF632 IRF633 € tt € CALOGIC CALOGIC CALOGIC CALOGIC

BS107P

Abstract: fet to92 BS107PT DSA0037516
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS107P ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS * RDS on =23Ω D G REFER TO BS107PT FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25°C

75E0533

Contextual Info: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/ D IS C R E T E N-channel enhancement mode vertical DMOS FET DE 1 7 S 2 D S B 3 GOOSSaT S f 95D T 05509 D -3S-2S BS107PT FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown

plessey

Abstract: BS107P
Contextual Info: TS PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY SEMICOND/DISCRETE DE~| 72ED533 GODSSDl D 95D 05501 D T - J S’~ 1 5* N-channel enhancement mode vertical DMOS FET BS107P FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSU E 2 - SEPT 93 FEATURES * 200 Volt VDS * R o S o n r2 3 ß REFER TO BS107PT FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BO L Drain-Source Voltage V A LU E U N IT V DS 200 V Continuous Drain Current at Tam|j=25°C

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

1RF630

Abstract: irf810 1RF540 1RF530 1RF620 1rf740 ferranti 1RF634 RF543 IRF9613
Contextual Info: - 244 - ä! € tt f # t Vd s or € * $ fg Ta=25‘ C Vg s • f Vd g )V (V) (V) ie. IGSS Pd Id * /CH * /CH (A) m Vg s th) ID S S max (nA) Vg s (V) (MA) Vd s (V) 14 Coss Crss 5* m. ffi % V g s =0 *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (max) (pF) Id (A)

complementary MOSFET TO252

Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
Contextual Info: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and

DMG1012

Abstract: ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8
Contextual Info: DIO 1931 MOSFET brochure Final Artwork extra amends 13/1/10 11:51 Page 1 MOSFETs www.diodes.com DIO 1931 MOSFET brochure (Final Artwork extra amends) 13/1/10 11:51 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS

ZVN0545G

Abstract: ZVN3320A ZVN3320F ZVN0120A ZVN0545A ZVN253 bs107p ZVN0545 ZVN2535A e-line
Contextual Info: Section 3: MOSFETs N-Channel Devices BVdss from 3 00 V to 450V Typical application areas for this range of devices include Power Supplies, Converters, Telecom Switches, M otor Control and High Voltage Driver circuits Part No. •d B V D SS V GS th •d m

zvn2110b

Abstract: ZVN3306B
Contextual Info: SELECTION TABLES TABLE 1: N-CHANNEL SM ALL SIGNAL M OSFETS Part number B V 0ss 'dm V G S th| V V mA A Min. Pd ^ D S Io n l at In Max. mA S2 at lD mA Max. Package V GS V w ZVN0545A* 450 90 0.6 1 3 1 50 100 10 0.7 E-line ZVN0545B 450 150 0.6 1 3 1 50 100 10

ZVN2106AM

Abstract: ZVP2106AM1 ZTX753M1 ZTX751M1 ZVP0535AM1 ZTX449 42-06A ZTX653M
Contextual Info: 03 PLESSEY SENI C O N D / D I SC R E T E D E I 7 2 5 0 5 3 3 0 0 0 b 7 fl0 S I ~ E-LIN E''M l' 1 The package that offers you more POWER and PERFORMANCE to meet your Surface Mount Requirements. The range of E-Line M1 products has been specially selected to meet current and future design requirements

mosfet cross reference

Abstract: bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross
Contextual Info: MOSFET Cross Reference* Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number 2N6660 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G

ZTX752 equivalent

Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request