7G57FL Search Results

Contextual Info: bDE D • T c]7G57fl 0d07flQcl ZETEX N-channel enhancement­ mode vertical DMOS FET SEMICONDUCTORS ZV N 05 45 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance •

Contextual Info: SbE D • Tc 7G57fl üüüb^SB *i&3 ■ZETB CENTRE COLLECTOR E-LINE ZETEX SEMICONDUCTORS TABLE 1: MEDIUM POWER Type Max. V CE|sat| at 'c •b mA mA V Max. VcBO ^CEO Cont. 'c V mA V - p 3 3 - c> i Ufe at Min. fT at lc Min. Max. mA MHz mA P,o, "l"amb = 25°C

Contextual Info: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1053 ISSUE 1 • NOVEMBER 1995 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage C ollector-E m itter Voltage VALUE UNIT V CBO 150 V V CEO 75 V Emitter-Base Voltage V ebo 5 V Peak Pulse Current

Contextual Info: 5bE D • ^70570 GOGbTH? bflT ■ Z E T B E-LINE DIODE SPECIFICATIONS S C H O T T K Y BARRIER DIODES ZETEX T - c n - i^ SEMICONDUCTORS T h e se de v ice s have a high breakdow n voltage and ultra fa st sw itc h in g capabilities. R.F. applications in clu d e low n o ise m ixers, large and sm all signal detectors, lim iters and discrim inators. A p p lica tio n s

ISD 2210

Contextual Info: ZETEX SEMICONDUCTORS TSD D Bi T'ïVOSTÔ D O O S b ? ? 2 MZETB 95D 0 5 6 7 7 T '3 ? '0 ? ZV N 2210 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability