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Seoul Semiconductor SMJD-1803012C-XXN1 00A55E038ALL LINEAR MODULE VALUE - Tape and Reel (Alt: SMJD-1803012C-XXN1 00A55E038ALL)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SMJD-1803012C-XXN1 00A55E038ALL	Tape & Reel		12 Weeks	360	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Seoul Semiconductor SMJD-1803012C-XXN100A51G038ALL LINEAR MODULE VALUE - Boxed Product (Development Kits) (Alt: SMJD-1803012C-XXN100A51G038ALL)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SMJD-1803012C-XXN100A51G038ALL	Box		12 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
TDK Corporation CN100A110-24 - Bulk (Alt: CN100A110-24)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	CN100A110-24	Bulk		20 Weeks	5	1 $146.20 10 $138.50 100 $138.50 1000 $138.50 10000 $138.50	Buy Now
TDK Corporation CN100A24-12/CO DC-DC, PCB MOUNT, QUARTER BRICK, INPUT 24VDC, OUTPUT 12V 8.4A, 100W - Bulk (Alt: CN100A24-12/CO)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	CN100A24-12/CO	Bulk			5	1 - 10 - 100 - 1000 - 10000 -	Get Quote
TE Connectivity 154N-100A-C NISO,LP,ABS,CABLE/CONNECTOR - Bulk (Alt: 154N-100A-C)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	154N-100A-C	Bulk			50	1 - 10 - 100 $168.15 1000 $155.54 10000 $155.54	Buy Now
Sager	154N-100A-C				25	1 - 10 - 100 $200.69 1000 $200.69 10000 $200.69	Buy Now
Interstate Connecting Components	154N-100A-C					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	154N-100A-C					1 - 10 - 100 $157.24 1000 $157.24 10000 $157.24	Buy Now

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N100A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
17n100a Abstract: NC2030 17N100AU1 Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	n100u1 n100au1 17n100u1 17n100au1 +217n100a nc2030	PDF
Contextual Info: □ IXYS Low VCE sal IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 V CES ^C25 V CE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions vw CES T, = 25°C to 150°C 1000 V V CGR Tj = 25°C to 150°C; RaE = 1 M£2	OCR Scan	n100u1 n100au1 o-247 10n100u1 +210n100au1 4bflb22b	PDF
IXGH17N100 Contextual Info: BIXYS jjjjjB jjj Low VCHH0IGBT High speed IGBT IXGH/IXGM17N100 IXGH/IXGM17 N100A VC E S ^C25 v C E sat 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V « Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 1000 V VCGR Tj = 25°C to 150°C; RGE = 1 M fi	OCR Scan	ixgh/ixgm17n100 ixgh/ixgm17 n100a o-247 +1ixgh17n100	PDF
25N100 Contextual Info: VCES Low VCE sat High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V V GES Continuous ±20 V V GEM Transient ±30 V I C25	Original	n100a o-204 o-247 25n100g2 +125n100	PDF
C289 Abstract: IXTM5N100A Contextual Info: Standard Power MOSFET ix t h / ix t m s n io o IXTH/IXTM 5 N100A VD S S ^ D25 1000 V 1000 V 5A 5A D D S o n 2.4 £1 2.0 Q N-Channel Enhancement Mode Symbol Maximum Ratings Test Conditions V v oss T j = 25°C to 150“C 1000 V VDGR T j = 25°C to 150°C; RGS = 1 M il	OCR Scan	n100a o-247 o-204 c2-88 +5ixth5n100 1xtm5n100 c2-89 c289 ixtm5n100a	PDF
17N10 Contextual Info: Low VCE sat IGBT High speed IGBT Symbol Test Conditions VCES VCGn ^ ^ VGES v GEM 'c25 IXGH/IXGM17 N100 IXGH/IXGM17 N100A Maximum Ratings = 25°C to 150°C 1000 V = 25°C to 150°C; RGE = 1 MU 1000 V Continuous ±20 V Transient ±30 V 34 A Tc = 25”C 'c90	OCR Scan	ixgh/ixgm17 n100a o-247 o-204 +417n100 17n100u1 17n100au1 17n10	PDF
10N100U1 Abstract: N100A ixgh 1500 Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	n100u1 n100au1 10n100u1 10n100au1 +2n100a ixgh 1500	PDF
5n100 Abstract: 5N100A Contextual Info: □IXYS Standard Power MOSFET IXTH/IXTM 5 N100 IXTH/IXTM 5 N100A vDSS ^D25 1000 V 1000 V 5A 5A DDS on 2.4 2.0 ft ft N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 1000 V v DGR Tj = 25°C to 150°C; RGS = 1 MQ 1000 V VGS V GSM	OCR Scan	n100a o-247 o-204 4bflb52b +25n100 5n100a	PDF
2SN100 Abstract: 25N100 Contextual Info: VCES Low V CE sat <" W¥V High speed IGBT IXGH/IXGM 25 N100 IXGH/IXGM 25 N100A ^C25 1000 V 1000 V v* CE(sat) 50 A 1 3.5 V 50 A 4.0 V G_ Symbol Test C onditions Maximum Ratings V " ces Tj = 25°C to 150°C 1000 V v CGR T j = 25°C to 150°C; RGE = 1 M n 1000	OCR Scan	n100a t0-247 t0-204 o-247 +22sn100 25n100	PDF
Contextual Info: v Low VCE sst High speed IGBT IXGH/IXGM 25 N100 IXGH/IXGM 25 N100A « Symbol Test Conditions vCES Tj = 25°C to 150°C 1000 V V cG R ^ 1000 V V GES Maximum Ratings = 25°C to 150°C; RGE = 1 Mi2 v Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C 50 A ^C90	OCR Scan	n100a o-247 t0-204 4bflb22b +225n100 25n100a	PDF
25N100A Contextual Info: nixYS Lo w Vce mi ig b t High Speed IGBT IXSH/IXSM25N100 IXSH/IXSM 25 N100A v* C E S ^C 25 vv C E (s a t) 1000 V 1000 V 50 A 50 A 3.5 V 4.0 V Short Circuit SOA Capability Test Conditions Maximum Ratings VCES Tj - 25°C to 150°C 1000 V v CGR v GES v GEM T, = 25°C to 150°C; RGE = 1 MQ	OCR Scan	ixsh/ixsm25n100 n100a o-247 o-204 +32sn100 25n100a 25n100	PDF
10N100 Abstract: 10N10 10N100A N100 IC-2520 Contextual Info: Low VCE sat IGBT High speed IGBT IXGH 10 N100 IXGH 10 N100A Maximum Ratings VCES IC25 VCE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Symbol Test Conditions VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20	Original	n100a 10n100 10n100a 10n10 +2n100 ic-2520	PDF
17N100 Abstract: 17N100A N100 17N100AU1 Contextual Info: Low VCE sat High speed IGBT IXGH/IXGM 17 N100 IXGH/IXGM 17 N100A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 34 A IC90	Original	n100a 17n100 17n100a o-204ae +317n100u1 n100 17n100au1	PDF
2N100 Abstract: C285 IXTP2N100A Contextual Info: ItilXYS IXTA/fXTP 2 N100 IXTA/IXTP 2 N100A VDSS ^D25 1000 V 1000 V 2A 2A p DS on 7.0 Û 6.0 ß N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VOSS Tj = 25°C to 150°C 1000 V V Tj = 25°C to 150°C; RGS= 1 M fi 1000 V Vos VGSM Continuous	OCR Scan	n100a o-220 o-263 2n100 +42n100a c2-85 c285 ixtp2n100a	PDF

ixsm Abstract: 25N100 D-68623 25N100A N100 Contextual Info: VCES Low VCE sat IGBT High Speed IGBT IXSH/IXSM 25 N100 1000 V IXSH/IXSM 25 N100A 1000 V I C25 VCE(sat) 50 A 50 A 3.5 V 4.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	n100a o-247 d-68623 ixsm +325n100 25n100a n100	PDF
25N100A Abstract: .25N100 25N100 N100 Contextual Info: Low VCE sat High speed IGBT IXGH/IXGM 25 N100 IXGH/IXGM 25 N100A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 50 A IC90	Original	n100a 25n100 25n100a o-204ae +1n100	PDF
Contextual Info: OIXYS l«»v .laBT IXSH/IXSM 25 N100 IXSH/IXSM 25 N100A High Speed IGBT V* C E S ^C25 V * CE sat 1000 V 1000 V 50 A 50 A 3.5 V 4.0 V Short Circuit SOA Capability Sym bol T est C o n dition s M axim um R atings v CES T j = 25°C to 150°C 1000 V V CGR T j = 25°C to 150°C; RGE = 1 M il	OCR Scan	n100a 25n100 25n1ooa	PDF
IXYS 17N100 Abstract: 17N100A 17N100 N100 Contextual Info: VCES Low VCE sat IGBT High speed IGBT IXGH/IXGM 17 N100 1000 V 34 A IXGH/IXGM 17 N100A 1000 V 34 A Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V Maximum Ratings VGES Continuous ±20 V VGEM Transient	Original	n100a o-247 17n100 17n100a +4o-204ae 17n100u1 ixys 17n100 n100	PDF
Contextual Info: OIXYS V CES Low VCE ,i(\| IGBT High Speed IGBT IXGH 12 N100 IXGH 12 N100A e _ Symbol Test Conditions VCES Tj = $ Maximum Ratings 25°C to 150°C 1000 v CGR Tj = 25°C to 150°C; RGE = 1 MQ 1000 V Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 24 A	OCR Scan	n100a o-247 -247s	PDF
Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	n100u1 n100au1 17n100u1 17n100au1	PDF
10N100U1 Abstract: RG150 Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 VCES I C25 VCE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	n100u1 n100au1 10n100u1 10n100au1 +1rg150	PDF
transistor ixgh 25N100 Abstract: .25N100 25N100 ixgm IXGH/IXGM 25 N100A 25N100A N100 ixgh 10v C90T IC2550 Contextual Info: VCES Low VCE sat High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V V GES Continuous ±20 V V GEM Transient ±30 V I C25	Original	n100a o-204 o-247 25n100g2 +9transistor ixgh 25n100 25n100 ixgm ixgh/ixgm 25 n100a 25n100a n100 ixgh 10v c90t ic2550	PDF
ixgh 1500 Abstract: 17N100U1 17N100AU1 AC motor speed control 17n10 Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	n100u1 n100au1 17n100au1 17n100u1 +3ixgh 1500 ac motor speed control 17n10	PDF
5N100 Abstract: 5N100A N100 1000v5a 2NA250 Contextual Info: VDSS Standard Power MOSFET ID25 IXTH/IXTM 5 N100 1000 V IXTH/IXTM 5 N100A 1000 V 5A 5A RDS on 2.4 Ω 2.0 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 1000	Original	n100a o-204 o-247 5n100a +5o-204ae 5n100 n100 1000v5a 2na250	PDF

N100A Search Results

N100A Price and Stock

Seoul Semiconductor SMJD-1803012C-XXN1 00A55E038ALL

Seoul Semiconductor SMJD-1803012C-XXN100A51G038ALL

TDK Corporation CN100A110-24

TDK Corporation CN100A24-12/CO

TE Connectivity 154N-100A-C

N100A Datasheets Context Search

17n100a

IXGH17N100

25N100

C289

17N10

10N100U1

5n100

2SN100

25N100A

10N100

17N100

2N100

ixsm

25N100A

IXYS 17N100

10N100U1

transistor ixgh 25N100

ixgh 1500

5N100