4BFLB52B Search Results

ixys dsei 2x30-06c

Abstract: ixys dsei 2x30-05c
Contextual Info: 4bflb52b O O O i a n 2TÌ • IXY □IXYS DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diodes I FAV V t RRM rr = 2x30 A = 400-600 V < 35 ns miniBLOC, SOT-227 B v RSIf v Type Type DSEI 2X30-04C DSEI 2X30-05C DSEI 2X30-06C DSEI 2x31 -04C DSEI 2x31-050 DSEI 2x31-060

3n80a

Abstract: IXTP3N80 3n80 3N90 IXTM3N80 IXTM3N90 IXTP3N90 3N90R L015A
Contextual Info: I X Y S CORP lflE D • 4bflb52b OOOQbOô 5 IXTP3N80, IXTP3N90, IXTM3N80, IXTM3N90 “T • - \I 3 A M P S , 8 0 0 -9 0 0 V, 4.6Q/6.0S2 □IX Y S M A X IM U M R A T IN G S Sym. IXTP3N80 IXTM3N80 IXTP3N90 IXTM3N90 Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MS3) (1)

3n80a

Abstract: IXTM3N90
Contextual Info: I X Y S CORP lflE D • 4bflb52b OOOQbOô 5 IXTP3N80, IXTP3N90, IXTM3N80, IXTM3N90 □IXYS \I ”T ” MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MS3) (1) Gate-Source Voltage Continuous Voss Vdgr Vgs Vgsm Id Idm Po

IXSN35N120

Contextual Info: DIXYS High Voltage GBT with Diode IXSN 35N120AU1 VCES C25 V Symbol Test Conditions V CES T, = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M fl 1200 A V GES Continuous +20 V V ¥ gem Transient ±30 V ^C25 Tc = 25°C 70 A 'c a o T c = 90°C Maximum Ratings

MCC 40 -12io8

Abstract: MCC 90 16io8 MCC 90 12io8 MCC 40 -14io8 MCC 90 14io8 MCC44-06IO1 Thyristor mcc MCC44
Contextual Info: 4 bE D • 4 böb 5 Eb OOOllflO ^ ■ IXY I X Y S CORP EIIXYS 500 700 900 1300 1500 1700 i Type 400 600 800 1200 1400 1600 Version 1 Version 8 Version 8 MCC44-06io1 MCC44-08k>1 MCC44-12k>1 MCC44-14io1 MCC44-16Î01 MCC44-06ÌO8 MCC44-08ÎO8 MCC44-12io8 MCC44-14io8

Contextual Info: f Phase Control Thyristor CS 1250 lTRMS TAVM V RRM VRSM VRRM VDSM VDRM V V 1200 1400 1600 1200 1400 1600 Symbol Type 1 ° - ^ 3 4 Test Conditions Maximum Ratings 3000 1250 A A t = 10 ms 50 Hz , sine t = 8.3 ms (60 Hz), sine 23000 25000 A A t = 10 ms (50 Hz), sine

Contextual Info: □ I X Y S Fast Recovery Epitaxial Diode FRED v* RSM V ^ rrm DSEI 30 *fa vm - 3 0 A VRRM = 1 0 0 0 V trr = 35 ns A Type C l \ TO-247 AD V 1000 1000 DSEI30-10A A Symbol Test Conditions ^FRMS I•favm ★ ^FRM Tyj Tvjm Tc = 85°C; rectangular, d = 0.5 t, < 10 us; rep. rating, pulse width limited by TVJM

5n100

Abstract: 5N100A
Contextual Info: □IXYS Standard Power MOSFET IXTH/IXTM 5 N100 IXTH/IXTM 5 N100A vDSS ^D25 1000 V 1000 V 5A 5A DDS on 2.4 2.0 ft ft N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 1000 V v DGR Tj = 25°C to 150°C; RGS = 1 MQ 1000 V VGS V GSM

a 1712 mosfet

Abstract: ixth67n10 ID 48 Megamos K 1120 megamos 46 08 09 6
Contextual Info: IDE D I X Y S CORP DIXYS MegaMOS FETs IXTH67N10, 08 IXTM67N10, 08 MAXIMUM RATINGS Sym. IXTH67N08 IXTM67N08 IXTH67N10 IXTM67N10 Unit Drain-Source Voltage 1 V d SS 80 100 Vdc Drain-Gate Voltage (RGs = 1.0MQ) (1) VDGR 80 100 Vdc Parameter Gate-Source Voltage Continuous

Contextual Info: OIXYS Thyristor Modules MCC 19 iT RMS =2x40A TRM S ' =2x25 a VRRM =800-1600 V tavm V RSM V RRM v’ DSM V DRM V V 900 1300 1500 1700 Version 1 B 800 1200 1400 1600 Symbol Test Conditions ^TRMS TVJ —"^"vjM Tc = 58°C; 180° sine Tc = 85°C; 180° sine ^TSM

smd diode UJ 64 A

Abstract: cz 017 v3
Contextual Info: □IX Y S Preliminary Data Sheet IXGH32N60BU1 IXGH32N60BU1S HiPerFAST IGBT with Diode tfi Test Conditions VCES Tj = 25 °C to 150°C 600 V V CGR Tj = 25 °C to 150°C; RGE = 1 M ii 600 V v GES Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25 °C ^C90

MDD44-12N1

Abstract: 12nl E72873 MDD44 MDD44-04N1 MDD44-06N1 MDD44-08N1 MDD44-14N1 MDD44-16N1
Contextual Info: 4bE D I • 4bflb2Sb G G O l E n T H IX Y X V S CORP E ilX Y S ~ T S \Z i Diode Modules MDD44 It&v = 2 ■t a v 1 x 59 a VRRM= 400-1600 V VflSM Vram Type V V Version 1 500 700 900 1300 1500 1700 400 600 800 1200 1400 1600 MDD44-04N1 MDD44-Û6N1 MDD44-08N1

Contextual Info: nixYS Common Cathode Fast Recovery Epitaxial Diode FRED DSEK30 r— v nsM V v RRM V 1200 1200 ~l Type I -N -. f 4 " — A DSEK 30-12A iFAVM ic V,RR M 2x26 A 1200 V t„ 40 ns TO-247 AD Î A A C (TAB) Symbol Test C onditions ^FRMS "^"vj IpAVM ^FRM JPdt P,o,