MOSFET 10n60
Abstract: 10N60A ir 10n60 10N60 IXTH10N60 IXTM10N60 10N60R 3N90R
Contextual Info: I X Y S CORP IflE D • 4L,ab22b OOOObO'ï ? ■ □IXYS MAXIMUM RATINGS , 'T '2 ° 1 Parameter Sym. Drain-Source Voltage 1 Drain-Qate Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient Drain Current Continuous (Tc =25°C)
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4bab22bixth10n60ixtm10n6055q/0+8o-247300nsmosfet 10n6010n60air 10n6010n6010n60r3n90r
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3n80a
Abstract: IXTP3N80 3n80 3N90 IXTM3N80 IXTM3N90 IXTP3N90 3N90R L015A
Contextual Info: I X Y S CORP lflE D • 4bflb52b OOOQbOô 5 IXTP3N80, IXTP3N90, IXTM3N80, IXTM3N90 “T • - \I 3 A M P S , 8 0 0 -9 0 0 V, 4.6Q/6.0S2 □IX Y S M A X IM U M R A T IN G S Sym. IXTP3N80 IXTM3N80 IXTP3N90 IXTM3N90 Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MS3) (1)
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4bflb52bixtp3n80ixtp3n90ixtm3n80+7ixtm3n90o-2203n80a3n803n903n90rl015a
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6n60a
Abstract: IXTM6N60 6n60 600 volt n channel power mosfet
Contextual Info: I X Y S CO RP löE D • 4L,abS2b O Q O D b l O 3 ■ IXTP6N60, IXTM6N60 □ IX Y S 6 AMPS, 600 V, 1.2S/1.5Q MAXIMUM RATINGS Parameter IXTP6N60 IXTM6N60 Sym. Drain-Source Voltage 1 Drain-Gale Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient
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ixtp6n60ixtm6n60drain-sour420o-204+5o-220o-2476n60a6n60600 volt n channel power mosfet
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3n80a
Abstract: IXTM3N90
Contextual Info: I X Y S CORP lflE D • 4bflb52b OOOQbOô 5 IXTP3N80, IXTP3N90, IXTM3N80, IXTM3N90 □IXYS \I ”T ” MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MS3) (1) Gate-Source Voltage Continuous Voss Vdgr Vgs Vgsm Id Idm Po
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4bflb52bixtp3n80ixtp3n90ixtm3n80+3ixtm3n90electric4203n80a
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IXTH10N60
Abstract: IXTM10N60
Contextual Info: CORP IflE D • 4bab22b □ IX Y S OOOObO'ï 7 ■ IXTH10N60, IXTM10N60 MAXIMUM RATINGS 10 AMPS, 600 V, 0.55Q/0.7S2 'T-201 -IS , Sym. Parameter Drain-Source Voltage 1 Drain-Qate Voltage (RGS=1.0 MQ) (1) IXTH10N60 IXTM10N60 Unit 600 600 ±20 ±30 Vd0 Vdc
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4bab22bixth10n60ixtm10n6055q/0+4characte420o-204o-220o-247
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