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IXGM Datasheets (33)

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IXYS

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXGM10N100A	IXYS	Power MOSIGBTs	Scan	PDF	680.12KB	7
IXGM10N50A	IXYS	Power MOSIGBTs	Scan	PDF	680.12KB	7
IXGM10N60A	IXYS	Power MOSIGBTs	Scan	PDF	680.12KB	7
IXGM10N80A	IXYS	Power MOSIGBTs	Scan	PDF	680.12KB	7
IXGM10N90A	IXYS	Power MOSIGBTs	Scan	PDF	680.12KB	7
IXGM17N100	IXYS	4.0V diode	Original	PDF	66.19KB	2
IXGM17N100A	IXYS	4.0V diode	Original	PDF	66.19KB	2
IXGM20N100A	IXYS	Power MOSIGBTs	Scan	PDF	680.12KB	7
IXGM20N50A	IXYS	Power MOSIGBTs	Scan	PDF	680.12KB	7
IXGM20N60	IXYS	Low VCE(sat) IGBT High speed IGBT	Original	PDF	65.81KB	2
IXGM20N60A	IXYS	Low VCE(sat) IGBT High speed IGBT	Original	PDF	65.81KB	2
IXGM20N60A	IXYS	Power MOSIGBTs	Scan	PDF	680.12KB	7
IXGM20N80A	IXYS	Power MOSIGBTs	Scan	PDF	680.12KB	7
IXGM20N90A	IXYS	Power MOSIGBTs	Scan	PDF	680.12KB	7

IXGM25N100	IXYS	1000V, 50A diode	Original	PDF	108.92KB	4
IXGM25N100A	IXYS	1000V, 50A diode	Original	PDF	108.92KB	4
IXGM25N100A	IXYS	Power MOSIGBTs	Scan	PDF	680.12KB	7
IXGM25N80A	IXYS	Power MOSIGBTs	Scan	PDF	680.12KB	7
IXGM25N90A	IXYS	Power MOSIGBTs	Scan	PDF	680.12KB	7
IXGM30N50	IXYS	IGBT 30 Amps, 500-600 Volts	Scan	PDF	380.24KB	5

IXGM Price and Stock

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IXYS Corporation


IXYS Corporation IXGM40N50A TRANSISTOR,IGBT,N-CHAN,500V V(BR)CES,TO-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components ()	IXGM40N50A		15			1 $17.55 10 $17.55 100 $17.55 1000 $17.55 10000 $17.55	Buy Now
	IXGM40N50A		14			1 $36.75 10 $34.92 100 $33.08 1000 $33.08 10000 $33.08	Buy Now
IXYS Corporation IXGM1028 IC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IXGM1028		6			1 $32.50 10 $32.50 100 $32.50 1000 $32.50 10000 $32.50	Buy Now
IXYS Corporation IXGM30N50 TRANSISTOR,IGBT,N-CHAN,500V V(BR)CES,TO-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IXGM30N50		5			1 $32.50 10 $32.50 100 $32.50 1000 $32.50 10000 $32.50	Buy Now

IXGM Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
30N60 Abstract: N60A 30N60A igbt 30N60 IXGH30N60U1 30N60U1 IXGH30N60AU1 IXGM30N60A Contextual Info: Low VCE sat IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 50 A IC90	Original	wei60a 30n60 30n60a o-204ae +630n60u1 n60a igbt 30n60 ixgh30n60u1 ixgh30n60au1 ixgm30n60a	PDF
IXGH17N100 Contextual Info: BIXYS jjjjjB jjj Low VCHH0IGBT High speed IGBT IXGH/IXGM17N100 IXGH/IXGM17 N100A VC E S ^C25 v C E sat 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V « Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 1000 V VCGR Tj = 25°C to 150°C; RGE = 1 M fi	OCR Scan	ixgh/ixgm17n100 ixgh/ixgm17 n100a o-247 +1ixgh17n100	PDF
20N50A Abstract: 20n50 IXGH20N50 f sss 20n60 sss 20n60 Contextual Info: 4686226 ' I X Y S CORP 03 DE I •-§tiñ b SEb □□□□5E4 T~ 3 T — t £ T 1~~ £} IXGH20N50, 60 IXGM20N50, 60 20 A M PS, 5 0 0 -6 0 0 VOLTS M AXIM UM RATINGS Sym. IXGH20N50 IXGM20N50 IXGH20N60 IXGM20N60 Unit Drain-Source Voltage 1) Vdss 500 600 Vdc	OCR Scan	ixgh20n50 ixgm20n50 ixgh20n60 ixgm20n60 +420n50 20n50a f sss 20n60 sss 20n60	PDF
25N100 Contextual Info: VCES Low VCE sat High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V V GES Continuous ±20 V V GEM Transient ±30 V I C25	Original	n100a o-204 o-247 25n100g2 +125n100	PDF
17N10 Contextual Info: Low VCE sat IGBT High speed IGBT Symbol Test Conditions VCES VCGn ^ ^ VGES v GEM 'c25 IXGH/IXGM17 N100 IXGH/IXGM17 N100A Maximum Ratings = 25°C to 150°C 1000 V = 25°C to 150°C; RGE = 1 MU 1000 V Continuous ±20 V Transient ±30 V 34 A Tc = 25”C 'c90	OCR Scan	ixgh/ixgm17 n100a o-247 o-204 +417n100 17n100u1 17n100au1 17n10	PDF
40N60 Abstract: 40n60 igbt 40N60A IXGH40N60 G 40N60 igbt N60A IC IGBT 40N60 g 40n60 IXGH40N60A IXGM40N60A Contextual Info: Low VCE sat IGBT High speed IGBT IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C, limited by leads	Original	13/10j 40n60a 40n60 o-204ae +840n60 igbt ixgh40n60 g 40n60 igbt n60a ic igbt 40n60 g 40n60 ixgh40n60a ixgm40n60a	PDF
40n60 igbt Abstract: 40n60 IXGH/40n60 igbt 40N60A G40N60a IXGH/IXGM 40 N60A G 40N60 igbt igbt equivalent to 40n60 IXGH40N60 40n60 transistor Contextual Info: Low VCE sat IGBT High speed IGBT IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C, limited by leads	Original	40n60 igbt 40n60 ixgh/40n60 igbt 40n60a +6g40n60a ixgh/ixgm 40 n60a g 40n60 igbt igbt equivalent to 40n60 ixgh40n60 40n60 transistor	PDF
2SN100 Abstract: 25N100 Contextual Info: VCES Low V CE sat <" W¥V High speed IGBT IXGH/IXGM 25 N100 IXGH/IXGM 25 N100A ^C25 1000 V 1000 V v* CE(sat) 50 A 1 3.5 V 50 A 4.0 V G_ Symbol Test C onditions Maximum Ratings V " ces Tj = 25°C to 150°C 1000 V v CGR T j = 25°C to 150°C; RGE = 1 M n 1000	OCR Scan	n100a t0-247 t0-204 o-247 +22sn100 25n100	PDF
wabash Abstract: 25N80A LHi 978 25n80 25N100 25N90 IXGH25N100 IXGH25N80 IXGH25N90 IXGM25N100 Contextual Info: I X Y S LOKM " 03 4686226 I X Y S C O R P DE I 4bübddb UUUUddU Jj 03E 00220 D IXGH25N80, 90, 100 IXGM25N80, 90, 100 25 AMPS, 800-1000 VOLTS MAXIMUM RATINGS Sym. IXGH25N80 IXGM25N80 IXGH25N90 IXGM25N90 IXGH25N100 IXGM25N100 Unit Drain-Source Voltage 1 Vd ss	OCR Scan	ixgh25n80 ixgm25n80 ixgh25n90 ixgh25n100 +8ixgm25n90 ixgm25n100 wabash 25n80a lhi 978 25n80 25n100 25n90	PDF
40n50 Abstract: 40n60 equivalent megamos 48 40n60 40N50A megamos IXGM40N60A ID 48 Megamos f g megamos IXGH40N60 Contextual Info: 46Ö6226 I X Y S CORP 9iP 00093 D T ~ PE I Llbflfc.5 5 h"'DD0 b a [i3""T I X Y S CORP R MegaMOS IGTs IXGH, IXGM N-Channel Very High Power Conductivity Modulated MOSIGTs PRELIMINARY INFORMATION FEATURES • • • • Very high current capability— 75	OCR Scan	50khz 40n50 40n60 equivalent megamos 48 +740n60 40n50a megamos ixgm40n60a id 48 megamos f g megamos ixgh40n60	PDF
20N60A Abstract: f 20n60a N60A 20N60 20N60AU1 IXGH 20 N60A 30NC60 igbt 20n60 Contextual Info: Low VCE sat IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 40 A IC90	Original	20n60 20n60a o-204ae 20n60u1 +620n60au1 f 20n60a n60a ixgh 20 n60a 30nc60 igbt 20n60	PDF
Contextual Info: v Low VCE sst High speed IGBT IXGH/IXGM 25 N100 IXGH/IXGM 25 N100A « Symbol Test Conditions vCES Tj = 25°C to 150°C 1000 V V cG R ^ 1000 V V GES Maximum Ratings = 25°C to 150°C; RGE = 1 Mi2 v Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C 50 A ^C90	OCR Scan	n100a o-247 t0-204 4bflb22b +225n100 25n100a	PDF
17N100 Abstract: 17N100A N100 17N100AU1 Contextual Info: Low VCE sat High speed IGBT IXGH/IXGM 17 N100 IXGH/IXGM 17 N100A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 34 A IC90	Original	n100a 17n100 17n100a o-204ae +317n100u1 n100 17n100au1	PDF
30n60u Abstract: 30N60A ixgh30n60a IXGM30N60 Contextual Info: L o w V cE s a t IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A High speed IGBT Symbol Test Conditions V y ces Tj = 25°C to 150°C 600 V v CGR ^ 600 V VGES Continuous ±20 V v GEM T ransient ±30 V *C25 Tc = 25°C 50 A ^C90 T0 = 90°C 30 A ^c m Tc = 25°C, 1 ms	OCR Scan	o-247 30n60u1 30n60au1 4bflb22b +430n60u 30n60a ixgh30n60a ixgm30n60	PDF

30n60 Abstract: 30N60A igbt 30N60 30 N60A N60A 30N60U1 IXGH30N60AU1 IXGH30N60A IXGH30N60U1 Contextual Info: Low VCE sat IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 50 A I C90	Original	30n60 30n60a o-204ae 30n60u1 +730n60au1 igbt 30n60 30 n60a n60a ixgh30n60au1 ixgh30n60a ixgh30n60u1	PDF
20n50 Abstract: 20N50A IXGH20N50 c 20n50 Contextual Info: ' 4686226 I X Y S CORP 03 D E I 4hflbaEti ODDDSSM T • "” T~ 3 T —t £ o IXGH20N50, 60 IXGM20N50, 60 20 A M PS, 5 0 0 -6 0 0 VO LTS M A X IM U M RA TIN G S Parameter IXGH20N50 IXGM20N50 Sym. Drain-Gate Voltage Rgs 1-OMii) (1) = 600 Vd g r 600 Vdc Vg s	OCR Scan	ixgh20n50 ixgm20n50 ixgh20n60 ixgm20n60 +320n50 20n50a c 20n50	PDF
20n80 Abstract: 20N90 20N80A 20N100 Contextual Info: 4686226 I X Y S CORP ¡J3 ß T \| MhfibSEk O O D G E S l 3 T~ 37-13 IXGH20N80, 90, 100 IXGM20N80, 90, 100 * 2 0 A M PS, 8 0 0 -1 0 0 0 VOLTS MAXIMUM RATINGS Unit Drain-Source Voltage 1 Vd s s 800 900 1000 Vdc Drain-Gate Voltage (Rg s = 10M Ü) (1) Vd g r	OCR Scan	ixgh20n80 ixgm20n80 ixgh20n90 ixgh20n100 +6ixgm20n90 ixgm20n100 20n80 20n90 20n80a 20n100	PDF
25N100A Abstract: .25N100 25N100 N100 Contextual Info: Low VCE sat High speed IGBT IXGH/IXGM 25 N100 IXGH/IXGM 25 N100A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 50 A IC90	Original	n100a 25n100 25n100a o-204ae +1n100	PDF
IXYS 17N100 Abstract: 17N100A 17N100 N100 Contextual Info: VCES Low VCE sat IGBT High speed IGBT IXGH/IXGM 17 N100 1000 V 34 A IXGH/IXGM 17 N100A 1000 V 34 A Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V Maximum Ratings VGES Continuous ±20 V VGEM Transient	Original	n100a o-247 17n100 17n100a +4o-204ae 17n100u1 ixys 17n100 n100	PDF
20N60A Abstract: 20n60 ixgh 1500 20N60 datasheet 20n60 G N60A 20N60AU MJ 900# f 20n60a Contextual Info: Low VCE sat IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 40 A I C90	Original	20n60 20n60a o-204ae 20n60u1 +820n60au1 ixgh 1500 20n60 datasheet 20n60 g n60a 20n60au mj 900 f 20n60a	PDF
transistor ixgh 25N100 Abstract: .25N100 25N100 ixgm IXGH/IXGM 25 N100A 25N100A N100 ixgh 10v C90T IC2550 Contextual Info: VCES Low VCE sat High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V V GES Continuous ±20 V V GEM Transient ±30 V I C25	Original	n100a o-204 o-247 25n100g2 +9transistor ixgh 25n100 25n100 ixgm ixgh/ixgm 25 n100a 25n100a n100 ixgh 10v c90t ic2550	PDF
40N60A Abstract: 40n60 IXGH40N60 743e 40n60 igbt AT/40n60 igbt Contextual Info: : Low VCE sat IGBT1 w High speed IGBT IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 Mi2 600 V Continuous ±20 V Transient ±30 V vCGR vGES vGEM Maximum Ratings 'c25 Tc = 25°C, limited by leads	OCR Scan	o-247 o-204 4fciflli25b 40n60 +540n60a ixgh40n60 743e 40n60 igbt at/40n60 igbt	PDF
30N50A Abstract: 30n60 to-220 30N50 30N60 IXGM30N60 IXGH30N50 IXGH30N60 IXGM30N50 wabash 30n5 Contextual Info: T T T X X W 4686226 1 I “ 01 X Y S CO RP ÏÏFj4bübridb 03E 00223 UUUUddd Y D IXGH30N50, 60 IXGM30N50, 60 t 30 AM PS, 500-600 VO LTS IXGH30N50 IXGM30N50 IXGH30N60 IXGM30N60 Unit Drain-Source Voltage 1 Vdss 500 600 Vdc Drain-Gate Voltage (Rq s = 1-OMft) (1)	OCR Scan	ixgh30n50 ixgm30n50 ixgh30ns0 ixgh30n60 +7ixgm30n60 30n50a 30n60 to-220 30n50 30n60 wabash 30n5	PDF
4on60 Abstract: B289 IXGH40N60 1XGM40N60A ges 2222 B-289 40n60 Contextual Info: VCES IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A Low VCE sat IGBT High speed IGBT »C25 75 A 75 A 600 V 600 V V " CE(sat) 2.5 V 3.0 V Not for new designs Symbol Test Conditions Maximum Ratings v CE S ^ = 2 5 °C to 1 5 0 °C 600 V VCo„ ^ = 25°C to 150°C; HGE = 1 M fi	OCR Scan	o-247 b2-88 40ng0 40n60a +8b2-89 4on60 b289 ixgh40n60 1xgm40n60a ges 2222 b-289 40n60	PDF

IXGM Search Results

IXGM Datasheets (33)

IXGM Price and Stock

IXYS Corporation IXGM40N50A

IXYS Corporation IXGM1028

IXYS Corporation IXGM30N50

IXGM Datasheets Context Search

30N60

IXGH17N100

20N50A

25N100

17N10

40N60

40n60 igbt

2SN100

wabash

40n50

20N60A

17N100

30n60u

30n60

20n50

20n80

25N100A

IXYS 17N100

20N60A

transistor ixgh 25N100

40N60A

30N50A

4on60