IXGH30N50 Search Results

Contextual Info: IXGH30N50 Transistors N-Channel IGBT V BR CES (V)500 V(BR)GES (V)30 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case600m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.8.0

30N50A

Abstract: 30n60 to-220 30N50 30N60 IXGM30N60 IXGH30N50 IXGH30N60 IXGM30N50 wabash 30n5
Contextual Info: T T T X X W 4686226 1 I “ 01 X Y S CO RP ÏÏFj4bübridb 03E 00223 UUUUddd Y D IXGH30N50, 60 IXGM30N50, 60 t 30 AM PS, 500-600 VO LTS IXGH30N50 IXGM30N50 IXGH30N60 IXGM30N60 Unit Drain-Source Voltage 1 Vdss 500 600 Vdc Drain-Gate Voltage (Rq s = 1-OMft) (1)

Contextual Info: 4686226 03E I X Y S.CORP I X Y S CORP □3 00159 D D Ë J 4böb22t, D O D D I S T 5 |~ Power MOSIGBTs Part Number IXGP10N100 CollectorEmitter Voltage Vces Volts 1000 Continuous Pulsed Collector Current Fall Collector Current Collectoi Emitter Tc=25 °C Tc=90 °C Current Sat. Volt. Time

IXGH30N50A

Abstract: IXGP10N50A IXGH20N50A IXGH40N60 IXGH40N60A IXGH30N60A IXGP10N50 IXGH20N80 1xgp10n60a IXGH25N90A
Contextual Info: 4686226 I X I X Y 03E S.CORP Y S CORP □3 00159 O D E I 4böb25t. DOODIST E Power MOSIGBTs Part N um ber CollectorEmitter Voltage Vces Votts Continuous Pulsed Collector Current Power Fall Dis s. Collector Current Collectoi Emitter Tc=25 °C Tc=90 °C Current Sat. Volt. Time

IXGH30N50A

Abstract: IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60
Contextual Info: IXYS' MOSIGBT combines the best characteristics ofPower MOSFET and bipolar devices on a single mono­ lithic chip.The MOS gated input allows the MOSIGBT to be voltage driven like a MOSFET The complexity and cost of the drive circuitiy is greatly reduced. Since the MOSIGBT uses