30N50A
Abstract: 30n60 to-220 30N50 30N60 IXGM30N60 IXGH30N50 IXGH30N60 IXGM30N50 wabash 30n5
Contextual Info: T T T X X W 4686226 1 I “ 01 X Y S CO RP ÏÏFj4bübridb 03E 00223 UUUUddd Y D IXGH30N50, 60 IXGM30N50, 60 t 30 AM PS, 500-600 VO LTS IXGH30N50 IXGM30N50 IXGH30N60 IXGM30N60 Unit Drain-Source Voltage 1 Vdss 500 600 Vdc Drain-Gate Voltage (Rq s = 1-OMft) (1)
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ixgh30n50ixgm30n50ixgh30ns0ixgh30n60+7ixgm30n6030n50a30n60 to-22030n5030n60wabash30n5
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TO210AC
Abstract: TO-210AC TO-238 IXGN75N60 IXGM20N100A IXGM40N50 IXGM40N50A IXGM30N60
Contextual Info: 4686226 I 03E 0 0 1 6 0 I. X Y S C O R P □3 X Y S CORp D ' 7 '“ 3 ^ - /3 D eT| 4t.fit.25b DDOOltiD T Power MOSIGBTs Part Number CollectorEmltter Voltage Vces Volts Continuous Pulsed Collector Current Collector Current Collectoi Emitter Fall Tc=25 °C
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ixgn75n100ixgn75n90ixgn75n80ixgn75n60+12ixgn75n50ixgm25n100aixgm20n100aixgm10n100aixgm25n90aixgm20n90ato210acto-210acto-238ixgm40n50ixgm40n50aixgm30n60
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40n80
Abstract: IXGH40N60 38N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A
Contextual Info: Insulated Gate Bipolar Transistors IGBT 4^ r/ioei fType VCE(sat) max. Cto. typ. typ. A V pF pP 20 40 40 50 76 75 75 10 20 31 30 38 40 60 2.5 2.5 1.8 2.5 1.8 2.5 1.8 750 1500 1500 2800 2500 4500 4000 30 40 40 70 70 60 100 20 34 50 10 17 25 3.5 750 1500 2750
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10n6020n6031n6030n60+1538n6040n6060n6010n10017n10025n10040n80ixgh40n6012n60u140n80a50n60au120n60 igbtigbt 20n6060n60 ixghixga24n60a
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IXGH30N50A
Abstract: IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60
Contextual Info: IXYS' MOSIGBT combines the best characteristics ofPower MOSFET and bipolar devices on a single mono lithic chip.The MOS gated input allows the MOSIGBT to be voltage driven like a MOSFET The complexity and cost of the drive circuitiy is greatly reduced. Since the MOSIGBT uses
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4bflb55bixgh30n50aixgh20n50aixgp10n50a+7ixgh20n50ixgh25n80aixgh40n60ixgp10n60aamp. mosfet 1000 wattixgh25n90aixgm30n60
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SGH80N60RUFD
Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
Contextual Info: Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name Fairchild * Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*)
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sgr2n60ufdsgp10n60rufsgp10n60rufdsgh10n60rufd+15sgw10n60rufdsgp06n60skb10n60bup400dsgb15n60sgh80n60rufdbup314 equivalentbup314dsgh30n60ufdsgu06n60bup314motorola diode cross referencemgy20n120dixdh30n120au1sgp15n120
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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rd91ebq2n4401d1n3940q2n2907a+7d1n1190q2sc1815q2n3055q2n1132d1n750d02cz10d1n751
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