SKB10N60 Search Results
SKB10N60 Datasheets (5)
Infineon Technologies
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SKB10N60 |
|
10A 600V TO263AB SMD IGBT+Diode | Original | 301.97KB | 14 | ||
| SKB10N60A |
|
Fast IBGT in NPT Technology with soft, fast recovery anti-parallel EmCon Diode | Original | 446.5KB | 14 | ||
| SKB10N60A |
|
Fast IGBT in NPT-Technology with Soft, Fast Recovery Anti-Parallel EmCon Diode | Original | 446.74KB | 14 | ||
| SKB10N60A |
|
IGBT with Anti-Parallel Diode; Package: PG-TO263-3; Switching Frequency: Fast IGBT 10-40 kHz; Package: TO-220; VCE (max): 600.0 V; IC(max) @ 25°: 21.0 A; IC(max) @ 100°: 10.9 A | Original | 1.16MB | 13 | ||
| SKB10N60AATMA1 |
|
Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 20A 92W TO263-3 | Original | 566.94KB |
SKB10N60 Price and Stock
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Siemens SKB10N6021 A, 600 V, N-CHANNEL IGBT, TO-263AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SKB10N60 | 30 |
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Infineon Technologies AG SKB10N60AATMA1Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-263AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SKB10N60AATMA1 | 8,269 |
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