SGB30N60 Search Results
SGB30N60 Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SGB30N60 | Infineon Technologies | Fast IGBT in NPT Technology | Original | 422.86KB | 12 | ||
| SGB30N60 | Infineon Technologies | IGBT Discretes; Package: PG-TO263-3; Switching Frequency: Fast IGBT 10-40 kHz; Package: D2PAK (TO-263); VCE (max): 600.0 V; IC(max) @ 25°: 41.0 A; IC(max) @ 100°: 30.0 A | Original | 382.44KB | 11 | ||
| SGB30N60 | Infineon Technologies | 30A 600V TO263AB SMD IGBT | Original | 364.42KB | 12 | ||
| SGB30N60 | Siemens | Original | 1.09MB | 7 | |||
| SGB30N60ATMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 41A 250W TO263-3 | Original | 378.93KB |
SGB30N60 Price and Stock
Siemens SGB30N6041 A, 600 V, N-CHANNEL IGBT, TO-263AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SGB30N60 | 70 |
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Buy Now | |||||||
Infineon Technologies AG SGB30N60Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-263AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SGB30N60 | 1,000 |
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Get Quote | |||||||
Infineon Technologies AG SGB30N60ATMA1Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-263AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SGB30N60ATMA1 | 7,617 |
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Get Quote | |||||||
SGB30N60 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: SGP30N60 SGB30N60, SGW30N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: |
Original |
sgp30n60sgb30n60sgw30n60o-220ab+4 | |
g30n60
Abstract: G30N60 IGBT equivalent to g30n60 1 L 0380 PG-TO-263-3-2 SGB30N60 30mJ
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Original |
sgb30n60pg-to-263-3-2o-263abg30n60+4 | |
30A20V
Abstract: Q67040-S4237 SGB30N60 SGP30N60 SGW30N60
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Original |
sgp30n60sgb30n60sgw30n60o-220ab+6 | |
Q67040-A4463
Abstract: Q67040-S4237 Q67041-A4713 SGB30N60 SGP30N60 SGW30N60
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Original |
sgp30n60sgb30n60sgw30n60o-220ab+5 | |
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Contextual Info: Preliminary data SIEMENS SGP30N60, SGB30N60, SGW30N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications: |
OCR Scan |
sgp30n60sgb30n60sgw30n60o-220ab+2 | |
G30N60
Abstract: G30N60 IGBT JESD-022
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Original |
sgb30n60pg-to-263-3-2o-263abg30n60+2 | |
G30N60
Abstract: copper bond wire infineon G30N60 IGBT
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Original |
sgb30n60p-to-263-3-2o-263abg30n60+2 | |
G30N60Contextual Info: SGB30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: |
Original |
sgb30n60p-to-263-3-2o-263abg30n60 | |
SGP30N60
Abstract: BUP603D Q67040-S4237 SGB30N60 SGW30N60 SGP30N60 3 SC35015
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Original |
sgp30n60sgb30n60sgw30n60o-220ab+7 | |
Q67040-S4237
Abstract: sgw30n60
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Original |
sgp30n60sgb30n60sgw30n60o-220ab+4 | |
G30N60
Abstract: G30N60 IGBT equivalent to g30n60
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Original |
sgb30n60g30n60g30n60 igbtequivalent to g30n60 | |
Q67040-A4463
Abstract: Q67040-S4237 Q67041-A4713 SGB30N60 SGP30N60 SGW30N60
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Original |
sgp30n60sgb30n60sgw30n60p-to-220-3-1+8 | |
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Contextual Info: SGP30N60 SGB30N60, SGW30N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: |
Original |
sgp30n60sgb30n60sgw30n60o-220ab+4 | |
STR-G6551
Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
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Original |
2002-sepstr-g6551str-f6654g6551+7 | |
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PX3544
Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
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Original |
lead519b152-h9345-g2-x-7600px3544px7510+8 | |
600V igbt dc to dc buck converter
Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
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Original |
b192-h6780-g11-x-7600sp000008186vdsl6100i-e600v igbt dc to dc buck converter+9 | |
igbt dimmer
Abstract: SKW30N60HS SGP15N120 igbt 2A SKP15N60 SKW25N120 220 volt dimmer circuit SGW25N120 smps 12 volt SKW30N60
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Original |
b152-h7942-x-x-7600igbt dimmerskw30n60hssgp15n120+7 | |
BUZ MOSFET
Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
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Original |
615nvot-22320iemensb152-h6493-g5-x-7600+10 | |
SIPC69N60C3
Abstract: SPW20N60S5 equivalent sipc01n80c2 P-Channel Depletion Mosfets SKP15N60 BUZ78 equivalent SPNA2N80C2 BUP314 SIPC26N80C3 TDA16822
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Original |
sdp06s60sdp04s60sdb10s30bts555+16 | |
SGH80N60RUFD
Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
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Original |
sgr2n60ufdsgp10n60rufsgp10n60rufdsgh10n60rufd+15 | |