C289
Abstract: IXTM5N100A
Contextual Info: Standard Power MOSFET ix t h / ix t m s n io o IXTH/IXTM 5 N100A VD S S ^ D25 1000 V 1000 V 5A 5A D D S o n 2.4 £1 2.0 Q N-Channel Enhancement Mode Symbol Maximum Ratings Test Conditions V v oss T j = 25°C to 150“C 1000 V VDGR T j = 25°C to 150°C; RGS = 1 M il
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n100ao-247o-204c2-88+5ixth5n1001xtm5n100c2-89c289ixtm5n100a
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Irfp250 irfp460
Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20
Contextual Info: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)
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o-204o-264isoplus247o-220+16o-252o-247o-268isoplus220o-263ot-227birfp250 irfp460ixta3n12036p10irfp450 bridgen503irfp460 complementaryixth30n25ixth48n15ixth12n100q16p20
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5n100
Abstract: 5N100A
Contextual Info: □IXYS Standard Power MOSFET IXTH/IXTM 5 N100 IXTH/IXTM 5 N100A vDSS ^D25 1000 V 1000 V 5A 5A DDS on 2.4 2.0 ft ft N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 1000 V v DGR Tj = 25°C to 150°C; RGS = 1 MQ 1000 V VGS V GSM
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n100ao-247o-2044bflb52b+25n1005n100a
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IXTH5N100A
Abstract: gs 1117 ax
Contextual Info: inixY S Standard Power MOSFET IXTH/IXTM 5N100 IXTH/IXTM 5N100A VDSS ^D25 1000 V 1000 V 5A 5A p DS on 2.4 Q 2.0 Q, N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions VDSS ^ =25°C to150°C 1000 V VoO R ^ = 2 5 °C to 1 5 0 °C ;R GS= 1 MQ 1000
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5n1005n100ato150o-247+5o-204ixth5n100ixtm5n100ixth5n100ags 1117 ax
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MJ1005
Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007
Contextual Info: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:
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ixtm3n100ao-204aa/to-3ixtm3n70aixtm3n70+12mj13081mj13091mj1005md5000a2n3052mj12010ixtp2n100amd7000mj10011mj11017ixtp4n90amj12007
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IRF250
Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95
Contextual Info: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com
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00v/12airf250ixth13p20ixtp2n95+7ixtp2n100aixtp2n95aixtp4n100ixtp4n100aixtp4n90ixtp4n90aixtp4n95
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IXTH13P20
Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460
Contextual Info: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com
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ixth13p202n7100ixtp2p50mosfet irf460+6irf460 to-247ixtm10p50ixtm11p50ixtp4n100a2n7103irf460
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IXTM6N90A
Contextual Info: 4686226 03E 00145 I X Y S CORP I X Y S CORP □3 D D Ë T | 4bflbS2b DDODIMS 2 N-Channel MOSFETs Drain Current Id @ 25 °C C ase On R esistance Part Drain-Source Voltage Number V BR DSS l[>(Cont) lO(Pulsed) RDS(on) (Volts) (Amps) (Amps) (O hm s) 1000 1000
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ixtm5n100aixtm5n100ixtm4n100aixtm4n100+7ixtm2n100aixtm2n100ixtm5n95aixtm5n95ixtm4n95aixtm4n95ixtm6n90a
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1800 IXYS
Abstract: IXTM4N70A IXTM4N80 IXTM4N90 IXTM5N100 to-204
Contextual Info: - m s it * f M t Vd s or € t JV £ Ta=25°C Vg s Ig s s Id s s Vg s th) F D s (on) Vd s = * /CH * /CH g fs lo (o n ) Ciss Coss C rss (*typ) (*typ) (*typ) (V) (W) (A) (nA) Vg s (V) < UA) Vd s (V) Id (mA) (max) (max) (max) (V) (V) (pF) (pF) (pF) 5^ m m %
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m4n50t0-2041xtm4n50ao-204+81xtm4n70ixtm4n70aixtm10n90a1800 ixysixtm4n80ixtm4n90ixtm5n100to-204
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