IXTM5N100 Search Results

IXTM5N100 Datasheets (11)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTM5N100		IXYS	500V IGBT with diode	Original	PDF	105.51KB	4
IXTM5N100		IXYS	High Voltage Power MOSFETs	Scan	PDF	1.11MB	12
IXTM5N100		IXYS	High Voltage Power MOSFETs	Scan	PDF	1.11MB	12
IXTM5N100		Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	77.08KB	1
IXTM5N100		Unknown	FET Data Book	Scan	PDF	59.77KB	1
IXTM5N100		Sharp	1000 V, 5 A, sourse-drain diode	Scan	PDF	69.04KB	1
IXTM5N100A		IXYS	500V IGBT with diode	Original	PDF	105.51KB	4
IXTM5N100A		IXYS	High Voltage Power MOSFETs	Scan	PDF	1.11MB	12
IXTM5N100A		IXYS	High Voltage Power MOSFETs	Scan	PDF	1.11MB	12
IXTM5N100A		Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	77.08KB	1
IXTM5N100A		Unknown	FET Data Book	Scan	PDF	59.77KB	1

IXTM5N100 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
5N95A Abstract: N-channel MOSFET to-247 50a P-CHANNEL 25A TO-247 POWER MOSFET ixth5n95 Contextual Info: I X Y S □ I X Y CORP 1 ÖE D • 4t.0bE2b D00Gb03 b ■ IX T H 5 N 9 5 , IX T H 5 N 1 0 0 , IX T M 5 N 9 5 , IX T M 5 N 1 0 0 5 A M P S , 9 5 0-1000 V, 2.0Q /2.4Q S MAXIMUM RATINGS Parameter Sym. IXTH5N95 IXTMSN9S IXTH5N100 IXTM5N100 Drain-Source Voltage 1	OCR Scan	d00gb03 ixth5n95 ixth5n100 ixtm5n95 +6ixtm5n100 o-204 o-220 5n95a n-channel mosfet to-247 50a p-channel 25a to-247 power mosfet	PDF
C289 Abstract: IXTM5N100A Contextual Info: Standard Power MOSFET ix t h / ix t m s n io o IXTH/IXTM 5 N100A VD S S ^ D25 1000 V 1000 V 5A 5A D D S o n 2.4 £1 2.0 Q N-Channel Enhancement Mode Symbol Maximum Ratings Test Conditions V v oss T j = 25°C to 150“C 1000 V VDGR T j = 25°C to 150°C; RGS = 1 M il	OCR Scan	n100a o-247 o-204 c2-88 +5ixth5n100 1xtm5n100 c2-89 c289 ixtm5n100a	PDF
Irfp250 irfp460 Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20 Contextual Info: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)	OCR Scan	o-204 o-264 isoplus247 o-220 +16o-252 o-247 o-268 isoplus220 o-263 ot-227b irfp250 irfp460 ixta3n120 36p10 irfp450 bridge n503 irfp460 complementary ixth30n25 ixth48n15 ixth12n100q 16p20	PDF
5n100 Abstract: 5N100A Contextual Info: □IXYS Standard Power MOSFET IXTH/IXTM 5 N100 IXTH/IXTM 5 N100A vDSS ^D25 1000 V 1000 V 5A 5A DDS on 2.4 2.0 ft ft N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 1000 V v DGR Tj = 25°C to 150°C; RGS = 1 MQ 1000 V VGS V GSM	OCR Scan	n100a o-247 o-204 4bflb52b +25n100 5n100a	PDF
IXTH5N100A Abstract: gs 1117 ax Contextual Info: inixY S Standard Power MOSFET IXTH/IXTM 5N100 IXTH/IXTM 5N100A VDSS ^D25 1000 V 1000 V 5A 5A p DS on 2.4 Q 2.0 Q, N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions VDSS ^ =25°C to150°C 1000 V VoO R ^ = 2 5 °C to 1 5 0 °C ;R GS= 1 MQ 1000	OCR Scan	5n100 5n100a to150 o-247 +5o-204 ixth5n100 ixtm5n100 ixth5n100a gs 1117 ax	PDF
5N95A Abstract: 5N95 5N100 IXTH5N100 IXTH5N95 IXTM5N100 IXTM5N95 Contextual Info: I X Y S □ I X Y CORP 1ÖE D • 4t.0bE2b D00Gb03 IX T H 5 N 9 5 , IX T H 5 N 1 0 0 , S b ■ IX T M 5 N 9 5 , IX T M 5 N 1 0 0 5 A M P S , 9 5 0 -1 0 0 0 V, 2.0 Q /2.4Q MAXIM UM RATINGS Parameter Sym. Drain-Source Voltage 1 V dss V dgr IXTH5N95 IXTMSN9S	OCR Scan	d00gb03 ixth5n95 ixth5n100 ixtm5n95 +6ixtm5n100 o-247 00a/fjs 5n95a 5n95 5n100	PDF
MJ1005 Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007 Contextual Info: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:	Original	ixtm3n100a o-204aa/to-3 ixtm3n70a ixtm3n70 +12mj13081 mj13091 mj1005 md5000a 2n3052 mj12010 ixtp2n100a md7000 mj10011 mj11017 ixtp4n90a mj12007	PDF
IRF250 Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95 Contextual Info: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com	OCR Scan	00v/12a irf250 ixth13p20 ixtp2n95 +7ixtp2n100a ixtp2n95a ixtp4n100 ixtp4n100a ixtp4n90 ixtp4n90a ixtp4n95	PDF
IXTH13P20 Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460 Contextual Info: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com	OCR Scan	ixth13p20 2n7100 ixtp2p50 mosfet irf460 +6irf460 to-247 ixtm10p50 ixtm11p50 ixtp4n100a 2n7103 irf460	PDF
IXTM6N90A Contextual Info: 4686226 03E 00145 I X Y S CORP I X Y S CORP □3 D D Ë T \| 4bflbS2b DDODIMS 2 N-Channel MOSFETs Drain Current Id @ 25 °C C ase On R esistance Part Drain-Source Voltage Number V BR DSS l[>(Cont) lO(Pulsed) RDS(on) (Volts) (Amps) (Amps) (O hm s) 1000 1000	OCR Scan	ixtm5n100a ixtm5n100 ixtm4n100a ixtm4n100 +7ixtm2n100a ixtm2n100 ixtm5n95a ixtm5n95 ixtm4n95a ixtm4n95 ixtm6n90a	PDF
1800 IXYS Abstract: IXTM4N70A IXTM4N80 IXTM4N90 IXTM5N100 to-204 Contextual Info: - m s it * f M t Vd s or € t JV £ Ta=25°C Vg s Ig s s Id s s Vg s th) F D s (on) Vd s = * /CH * /CH g fs lo (o n ) Ciss Coss C rss (typ) (typ) (*typ) (V) (W) (A) (nA) Vg s (V) < UA) Vd s (V) Id (mA) (max) (max) (max) (V) (V) (pF) (pF) (pF) 5^ m m %	OCR Scan	m4n50 t0-204 1xtm4n50a o-204 +81xtm4n70 ixtm4n70a ixtm10n90a 1800 ixys ixtm4n80 ixtm4n90 ixtm5n100 to-204	PDF