5N95A
Abstract: 5N95 5N100 IXTH5N100 IXTH5N95 IXTM5N100 IXTM5N95
Contextual Info: I X Y S □ I X Y CORP 1ÖE D • 4t.0bE2b D00Gb03 IX T H 5 N 9 5 , IX T H 5 N 1 0 0 , S b ■ IX T M 5 N 9 5 , IX T M 5 N 1 0 0 5 A M P S , 9 5 0 -1 0 0 0 V, 2.0 Q /2.4Q MAXIM UM RATINGS Parameter Sym. Drain-Source Voltage 1 V dss V dgr IXTH5N95 IXTMSN9S
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d00gb03ixth5n95ixth5n100ixtm5n95+6ixtm5n100o-24700a/fjs5n95a5n955n100
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5N95A
Abstract: N-channel MOSFET to-247 50a P-CHANNEL 25A TO-247 POWER MOSFET ixth5n95
Contextual Info: I X Y S □ I X Y CORP 1 ÖE D • 4t.0bE2b D00Gb03 b ■ IX T H 5 N 9 5 , IX T H 5 N 1 0 0 , IX T M 5 N 9 5 , IX T M 5 N 1 0 0 5 A M P S , 9 5 0-1000 V, 2.0Q /2.4Q S MAXIMUM RATINGS Parameter Sym. IXTH5N95 IXTMSN9S IXTH5N100 IXTM5N100 Drain-Source Voltage 1
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d00gb03ixth5n95ixth5n100ixtm5n95+6ixtm5n100o-204o-2205n95an-channel mosfet to-247 50ap-channel 25a to-247 power mosfet
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IXTP4N50A
Abstract: IXTP4N90A IXTH12N45A IXTP3N80A IXTP3N90A IXTH15N45A IRFP460 IXTP2N100
Contextual Info: 4686226 03E 00 14 3 I X Y S CORP □3 I X Y S CO RP D T' D Ë J 4böt,52b 0 Q D 0 1 4 3 T |~~ N-Channel MOSFETs Part Number IXTP4N100A IXTP4N100 IXTP2N100A IXTP2N100 IXTP4N95A IXTP4N95 IXTP2N95A IXTP2N95 IXTP4N90A IXTP4N90 IXTP3N90A IXTP3N90 IXTP4N80A IXTP4N80
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ixtp4n100aixtp4n100ixtp2n100aixtp2n100+12ixtp4n95aixtp4n95ixtp2n95aixtp2n95ixtp4n90aixtp4n90ixtp4n50aixth12n45aixtp3n80aixtp3n90aixth15n45airfp460
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IRF250
Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95
Contextual Info: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com
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00v/12airf250ixth13p20ixtp2n95+7ixtp2n100aixtp2n95aixtp4n100ixtp4n100aixtp4n90ixtp4n90aixtp4n95
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IXFH15N100
Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
Contextual Info: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP
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irfp354o-247irfp360lc2n3049die+132c3049o-204aa/to-3ixtm20n55aixfh15n1002n3051ixfx15n100ixfh40n30ixfm6n90irfp450rixth24n50lixth26n50ixfh20n50ixfh9n80
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IXTH13P20
Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460
Contextual Info: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com
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ixth13p202n7100ixtp2p50mosfet irf460+6irf460 to-247ixtm10p50ixtm11p50ixtp4n100a2n7103irf460
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