60N60 Search Results
60N60 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 60N60 | IXYS | Ultra-low Vce(sat) IGBT | Original | 67.71KB | 2 |
60N60 Price and Stock
onsemi FCPF260N60EPower MOSFET, N-Channel, SUPERFET? II, Easy Drive, 600 V, 15 A, 260 mO, TO-220F - Bulk (Alt: 46W4291) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FCPF260N60E | Bulk | 1 |
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| FCPF260N60E | Tube | 68 Weeks | 1,000 |
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FCPF260N60E | Bulk | 1,196 | 1 |
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| FCPF260N60E | Bulk | 45 | 1 |
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FCPF260N60E | 157 | 1 |
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FCPF260N60E | 53 Weeks | 50 |
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FCPF260N60E | 53 Weeks | 50 |
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onsemi FGH60N60SMD- Bulk (Alt: 41T0516) |
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FGH60N60SMD | Bulk | 1 |
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| FGH60N60SMD | Tube | 27 Weeks | 30 |
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FGH60N60SMD | Bulk | 1,454 | 1 |
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| FGH60N60SMD | Bulk | 90 |
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FGH60N60SMD | 401 | 1 |
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FGH60N60SMD | 27 Weeks | 450 |
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FGH60N60SMD | 26 Weeks | 30 |
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FGH60N60SMD | 27 Weeks | 30 |
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FGH60N60SMD | 1,410 |
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Infineon Technologies AG IKFW60N60DH3EXKSA1- Rail/Tube (Alt: IKFW60N60DH3EXKSA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IKFW60N60DH3EXKSA1 | Tube | 36 Weeks | 240 |
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IKFW60N60DH3EXKSA1 | 1 |
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IKFW60N60DH3EXKSA1 | 37 Weeks | 240 |
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IKFW60N60DH3EXKSA1 | 7,982 |
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onsemi FCPF260N60E-F154Power MOSFET, N-Channel, SUPERFET? II, Easy Drive, 600 V, 15 A, 260 mO, TO-220F Ultra narrow lead - Rail/Tube (Alt: FCPF260N60E-F154) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FCPF260N60E-F154 | Tube | 7 Weeks | 1,000 |
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FCPF260N60E-F154 | 533 | 1 |
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FCPF260N60E-F154 | 7,247 |
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Infineon Technologies AG IKFW60N60EH3XKSA1- Rail/Tube (Alt: IKFW60N60EH3XKSA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IKFW60N60EH3XKSA1 | Tube | 36 Weeks | 240 |
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IKFW60N60EH3XKSA1 | 37 Weeks | 240 |
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IKFW60N60EH3XKSA1 | 8,629 |
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60N60 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
IGBT 60N60C2D1
Abstract: siemens igbt 75a PLUS247 60N60C2D1
|
Original |
60n60c2d1ic1102x61-06aigbt 60n60c2d1+2 | |
ixfn60n60Contextual Info: Advanced Technical Information IXFN 60N60 HiPerFETTM Power MOSFETs Single Die MOSFET RDS on G S S Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC= 25°C, Chip capability |
Original |
60n60ot-227ixfn60n60 | |
ge motor 752
Abstract: 60N60 IXGH60N60 60n60 igbt
|
OCR Scan |
60n60o-247o-264o-268+3 | |
60n6Contextual Info: Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 |
Original |
60n60b2d1ic1102x61-06a60n6 | |
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Contextual Info: Advance Technical Data HiPerFASTTM IGBT IXGH 60N60B2 IXGT 60N60B2 Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 |
Original |
60n60b2ic110o-268o-247 | |
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Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 60N60 VDSS ID25 RDS on = 600 V = 60 A = 75 mW D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR |
Original |
60n60ot-227e153432 | |
IXFN60N60Contextual Info: DIXYS Advanced Technical Information IXFN 60N60 HiPerFET Power MOSFETs Single Die MOSFET VDSS ^D25 P DS on = 600 V = 60 A = 75 mQ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions v" Tj =25°Cto150°C 600 V Tj =25°C to150°C ;R os = 1 M il |
OCR Scan |
ixfn60n60cto150to150ot-227+1 | |
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Contextual Info: Low VCE sat IGBT with Diode IXGR 60N60U1 ISOPLUS247TM VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR T J = 25°C to 150°C T J = 25°C to 150°C; R GE = 1 MW |
Original |
isoplus247tm60n60u1ic100 | |
60N60C2D1
Abstract: IGBT 60N60C2D1 MD 202 60N60 siemens igbt 75a TO-264-aa 60-06A IF110 PLUS247 HIPERFAST IGBT WITH DIODE
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Original |
60n60c2d1ic110if110o-264+9 | |
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Contextual Info: □ IX Y S Advanced Technical Information Low VrP/ . IGBT u t s a t with Diode . ISOPLUS247 OES _ _ . ^025 ” 75 A ^ C E (s a t) ” 1-7 V (Electrically Isolated Back Surface) Symbol TestC onditions V v CGR Tj Tj V v GEM ^C25 ^C100 ^CM Maximum Ratings |
OCR Scan |
isoplus24760n60u1 | |
60N50
Abstract: IXGH60N50 60N60 ixys 60n50 60N50A IXGH60N60 60n60. vdo 007
|
OCR Scan |
ixgh60n50ixgh60n60o-24760n50+4 | |
52N30
Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
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OCR Scan |
76n06-1176n07-1176n07-1267n10+16 | |
C1218
Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
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OCR Scan |
67n1075n1075n10q80n10q+16 | |
DSE 130 -06A
Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
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OCR Scan |
axc-051axc-051-raxc-102axv-002+16 |