60N60B2 Search Results

Contextual Info: Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600

Contextual Info: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C

Contextual Info: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C

60n60b

Abstract: PLUS247 IXGR60N60B2 SiEMENS 3 leads EC 350 2x61-06A
Contextual Info: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C

60N60B2D1

Abstract: ixgk60n60b2d1 PLUS247 ixgx60n60b2d1
Contextual Info: Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600

60N60B2

Abstract: ixgt60n60b2
Contextual Info: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 60N60B2 IXGT 60N60B2 Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

PLUS247

Abstract: IXGR60N60B2D1
Contextual Info: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 C2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C

60n6

Contextual Info: Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600

Contextual Info: Advance Technical Data HiPerFASTTM IGBT IXGH 60N60B2 IXGT 60N60B2 Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600

7N60B equivalent

Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2
Contextual Info: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches