2355Z Search Results

KYS 30 40 diode

Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
Contextual Info: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching

10N03

Abstract: 06N03 VU050-12N03 04n03 14n03 VU050-16N03 VU050-08N03 IT5 rectifier 16N03 12n03
Contextual Info: MbE D • 4 h ñ b 25 b 0 0 G 1 25 5 3 H I X Y I X Y S CORP 'T-Z.SiQ^ g m -< n TYYS k_J Data Sheet No. 911004A - November 1991 Three-Phase Diode Rectifier Bridge VU050 FEATURES:_ • Isolated Direct Copper Bond Base Plate

schematic diagram UPS ica

Abstract: optocoupler TLP 250 TLP250 MOSFET DRIVER application note schematic diagram UPS inverter three phase IXDP630PC TLP250 MOSFET DRIVER TLP250 mosfet gate Driver schematic diagram 48 volt UPS ups high power FET Transistor IXDP630PI
Contextual Info: □IXYS Data Sheet No. 9 1560B October 1991 INVERTER INTERFACE & DIGITAL DEADTIME GENERATOR for 3-PHASE PWM Controls IXDP630 / IXDP631 Features R eplaces 10-12 Standard SSI/MSI Logic Devices Allows a Wide Range of PWM Modulation Strategies Directly Drives High Speed Optocouplers

IXDP630 application note

Abstract: IXDP630
Contextual Info: □IXYS Data Sheet No. 91560B October 1991 INVERTER INTERFACE & DIGITAL DEADTIME GENERATOR for 3-PHASE PWM Controls IXDP630 / IXDP631 Features 5 Volt H C M O S Logic Im plem entation M aintains Low P o w er a t High S p ee d R e p la c e s Devices 1 0 - 1 2 S ta n d a r d S S I/M S I Logic

2355ZankerRd

Contextual Info: IflE D I X Y S CORP 4b ö b 2 2 b OOOOb'n 1 ~T-2P\ -<2> □IXYS ADVANCE TECHNICAL DATA SHEET* March 1989 PART NUMBER Data Sheet No. 3407A MOSIGBT with Anti-Parallel Rectifier IXGH20N100U1 FEATURES: • High Voltage M OSIGBT and Anti-Parallel Rectifier in One Package

Contextual Info: □ I X Y S orr li 3 005689 IXMS150 HIGH PERFORMANCE DUAL PWM CONTROLLER PRELIMINARY INFORMATION FEATURES • Two complete, synchronous pulse width modulators in one CMOS monolithic IC. • Under-voltage lockout assures proper behavior on power-ip and power-down.

M24308/13-1

Contextual Info: ca_C1-C61.qxd:Layout 1 2/10/11 9:32 AM Page 1 ca_C1-C61.qxd:Layout 1 2/10/11 9:32 AM Page 2 D Subminiature Selector Guide D- Subminiature D Sub C Series D*NM D*H MIL-DTL-24308 Wire Gauge Range AWG AWG 18 - 30 up to AWG 20 AWG 18 - 30 Mating Cycles 500 500

IXGH20N60U1

Abstract: IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB
Contextual Info: Mb E D • MböbEEb 0000^20 7 H I X Y 'PS !-! S I X Y S CORP □IXYS PRELIMINARY TECHNICAL INFORMATION* Data Book NO.91750A October 1991 "U1" Series IGBTs IGBTs with Interna! Fast Recovery Rectifier Features High Voltage IGBT and Anti-Parallel in One Package

DAMMG7X2PJ

Abstract: M24308/5-38
Contextual Info: ca_C1-C61.qxd:Layout 1 2/10/11 9:32 AM Page 1 ca_C1-C61.qxd:Layout 1 2/10/11 9:32 AM Page 2 D Subminiature Selector Guide D- Subminiature D Sub C Series D*NM D*H MIL-DTL-24308 Wire Gauge Range AWG AWG 18 - 30 up to AWG 20 AWG 18 - 30 Mating Cycles 500 500

1XFH12n100

Abstract: transistor 13n80
Contextual Info: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure

1xys

Abstract: D-6840 D6840 VB035-08N04 VB024-08N04 VB035-04N04 VB010 VB015-10N04 VB035 VB024-04N04
Contextual Info: 4b E D • I X Y S Mbflb25b D00127S 1 «IXY CORP □IXYS PRELIMINARY TECHNICAL INFORMATION* Data Sheet No. 911014A November 1991 VB006 VB015 VB035 Single-Phase Diode Rectifier Bridge VB010 VB024 • C om pact Housing

40n60 transistor

Abstract: 30N60 40n60 30N60A 40n60 igbt 17N10 wiom DC transistor JE 1090 20N60A igbt equivalent to 40n60
Contextual Info: MbE D • Mb S b S E b OO O O S T M T «IXY I X V S CORP T □IX Y S I V I S Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features • • • Guaranteed Short Circuit Capability SCSOA Optimized for 60Hz to 30kHz Switching