RURP8100 Search Results

MUR8100

Abstract: MUR8100E RUR8100 RURP8100
Contextual Info: MUR8100E, RURP8100 Data Sheet January 2002 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.

RURP8100CC

Contextual Info: RURP8100CC Data Sheet January 2000 File Number 4021.1 8A, 1000V Ultrafast Dual Diode Features The RURP8100CC is an ultrafast dual diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted

Contextual Info: RURP870CC, RURP880CC, RURP890CC, RURP8100CC Semiconductor 8A, 700V - 1000V Ultrafast Dual Diodes June 1995 Features Package • Ultrafast with Soft Recovery. <85ns JEDEC TQ-220AB • Operating

1334 diode

Abstract: RURP880CC RURP8100CC RURP870CC RURP890CC
Contextual Info: RURP870CC, RURP880CC, RURP890CC, RURP8100CC S E M I C O N D U C T O R 8A, 700V - 1000V Ultrafast Dual Diodes June 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <85ns JEDEC TO-220AB o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C

Contextual Info: RURP8100 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current8.0 V(RRM)(V) Rep.Pk.Rev. Voltage1.0k t(rr) Max.(s) Rev.Rec. Time110n @I(F) (A) (Test Condition)8 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.8 @I(FM) (A) (Test Condition)8.0

UR880

Abstract: RURP880 890E 870e 880e
Contextual Info: MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100 HARRIS S E M I C O N D U C T O R 8A, 700V - 1000V Ultrafast Diodes A p ril 1 9 9 5 Package Features • Ultrafast with Soft Recovery Characteristic tRR < 75ns JE D E C TO -220A C ANODE

RUR8100

Abstract: MUR8100 MUR8100E RURP8100
Contextual Info: MUR8100E, RURP8100 in te rd i Data Sheet Ja nu a ry 2000 File N u m b e r 2 7 8 0 .4 8A, 1000V Ultra fast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes • Ultrafast with Soft Recovery .<75ns • Operating Temperature. 175°C

RURP8100CC

Abstract: IGBT 1000V .200A
Contextual Info: RURP8100CC Data Sheet January 2002 8A, 1000V Ultrafast Dual Diode Features The RURP8100CC is an ultrafast dual diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

RURP880

Abstract: MUR890 MUR870E MUR870 MUR890E RUR880 MUR880E MUR880 MUR8100E RUR870
Contextual Info: S E M I C O N D U C T O R MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100 8A, 700V - 1000V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 75ns JEDEC TO-220AC ANODE o CATHODE • +175 C Rated Junction Temperature

MU8100

Contextual Info: MUR8100E, RURP8100 Data Sheet December 2002 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.

RURP880CC

Contextual Info: RURP870CC, RURP880CC, RURP890CC, RURP8100CC S em iconductor 8A, 700V - 1000V Ultrafast Dual Diodes June 1995 Package Features • Ultrafast with Soft Recovery. <85ns JEDEC TO-220AB • Operating

RURP880

Contextual Info: hßA R m S ' — MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100 8A, 700V - 1000V Ultrafast Diodes Aprii 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 75ns JEDEC TO-220AC ANODE • +175°C Rated Junction Temperature

transistor 700v

Abstract: RURP880 MUR890E transistor 800V 1A RUR880
Contextual Info: m M A D D IQ 3 j MUR870E, MUR880E, MUR890E MUR8100E, RURP870, RURP880 RURP890, RURP8100 8A, 700V - 1 000V Ultrafast Diodes December 1993 Package Features JEDEC TO-220AC TOP VIEW • Ultrafast with Soft Recovery Characteristic (tRR < 75ns • +175°C Rated Junction Temperature

ULTRAFAST SOFT RECOVERY RECTIFIER

Abstract: RURP8100CC
Contextual Info: RURP8100CC Data Sheet January 2000 File Number 4021.1 8A, 1000V Ultrafast Dual Diode Features The RURP8100CC is an ultrafast dual diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: MUR8100E, RURP8100 November 2013 Data Sheet Features 8 A, 1000 V Ultrafast Diodes • Ultrafast Recovery trr = 100 ns @ IF = 8 A The MUR8100E, RUR8100 is an ultrafast diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes in a variety of switching

MUR8100

Abstract: MUR8100E RUR8100 RURP8100
Contextual Info: MUR8100E, RURP8100 Data Sheet January 2000 File Number 2780.4 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride

MU8100

Abstract: 200a gto preliminary MUR8100E RUR8100 RURP8100 100a 1000v GTO
Contextual Info: MUR8100E, RURP8100 Data Sheet December 2002 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.

MUR8100

Abstract: MUR8100E RUR8100 RURP8100
Contextual Info: MUR8100E, RURP8100 Data Sheet January 2000 File Number 2780.4 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision

BYW19-1000

Abstract: BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200
Contextual Info: 41892.6 - FO-012 CROSSREF 11/19/98 10:54 AM Page 1 Harris Semiconductor-An Industry Leader For More Information: Harris Semiconductor comprises one sector of Harris Harris Marketing Support and ask for extension #7820

RURU10060

Abstract: MUR1560 MUR850 MUR850 diode MUR880E MUR1510 MUR1515 MUR810 MUR815 RURG3010
Contextual Info: 150A RURP8120 RURP15120 RURP30120 RURG30120 RURG50120 RURG75120 RURU50120 RURU75120 RURU100120 RURU150120 2.1V 110ns 2.1V 130ns 2.1V 150ns 2.1V 150ns 2.1 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 1200V S E M I C O N D U C TO R NOTE: VF at IF AVG , TJ = 25oC; trr at IF(AVG), dIF/dt = 100A/µs or 200A/µs, TJ = 25oC; † trr at IF = 1A.

URG 30100

Abstract: rur 450 UR810 IC p815 UR1520 P3020 ruru100 URP1560 RD6120 UR840
Contextual Info: HARRIS ULTRA-FAST RECOVERY RECTIFIER PRODUCT LINE & V R U R D 410 R U R D 610 R U R D 410S R URD610S 6 0 n s 1.5V RURD460 1.5 V 60ns 1 5V 3 5 n s 1.0 V 6 0 n s 1.5 V M ÜR815 R U R P815 M UR820 RURP820 3 5 n s 1.0V M UR1520 R U R P1520 35ns+ 1 .0 5 V 3 5 n s

igbt 1000v 80a

Abstract: 30A, 600v DIODE
Contextual Info: — MCT/IGBT/DIODES — 5 ULTRAFAST SINGLE DIODES PAGE SELECTION G U ID E . 5-3 MUR810, MUR815,

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455