MU8100 Search Results

14CZ

Abstract: MU81000 MU8100 MU81000BCX25
Contextual Info: 1 M x 8 U V EPROM Module m o l a t e MU81000BCX-25/30/35 Issue 3 .0 : Novem ber 1988 S em iconductor Inc. 1,048,576 x 8 U.V Erasable C M O S EPR O M Pin Definition Features NC VCC DO D1 D2 D3 D4 D5 D6 D7 NC A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 NC GND NC Fast Access Time of 250 /30 0 /35 0 nS

MU8100

Contextual Info: MUR8100E, RURP8100 Data Sheet December 2002 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.

MU8100

Abstract: MUR8100E MU810 RUR8100
Contextual Info: MUR8100E, RURP8100 March 2001 Data Sheet Features 8 A, 1000 V Ultrafast Diodes • Ultrafast Recovery trr = 100 ns @ IF = 8 A The RUR8100 is an Ultrafast Diode with low forward voltage drop. This device is intended for use as freewheeling and clamping Diodes in a variety of switching

Contextual Info: MUR8100E, RURP8100 November 2013 Data Sheet Features 8 A, 1000 V Ultrafast Diodes • Ultrafast Recovery trr = 100 ns @ IF = 8 A The MUR8100E, RUR8100 is an ultrafast diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes in a variety of switching

MU8100

Abstract: 200a gto preliminary MUR8100E RUR8100 RURP8100 100a 1000v GTO
Contextual Info: MUR8100E, RURP8100 Data Sheet December 2002 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.