RURD650S Search Results

RUR660

Abstract: RUR640 RURD640 RURD640S RURD650 RURD650S RURD660 RURD660S RUR650
Contextual Info: S E M I C O N D U C T O R RURD640, RURD650, RURD660, RURD640S, RURD650S, RURD660S 6A, 400V - 600V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . .<55ns JEDEC STYLE TO-251 • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175oC

Contextual Info: HAFRFRIS S E M I C O N D U C T O R RURD640, RURD650, RURD660 RURD640S, RURD650S, RURD660S 6A, 400V - 600V Ultrafast Diodes January 1995 Package Features JEDEC STYLE TO-251 • Ultrafast with Soft Recovery. <55ns

Contextual Info: RURD650S Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current6 V(RRM)(V) Rep.Pk.Rev. Voltage500 t(rr) Max.(s) Rev.Rec. Time55n @I(F) (A) (Test Condition)1 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)6

rur660

Abstract: 600V, 9A, Diodes RUR640 TA49038
Contextual Info: HLAJRFRIS S E M . c o n d u c t o r RURD640, RURD650, RURD660, RURD640S, RURD650S, RURD660S 6A, 400V - 600V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . .<55ns • Operating Tem p eratu re. . . . +175°C • Reverse Voltage Up To . . . .

RURU10060

Abstract: MUR1560 MUR850 MUR850 diode MUR880E MUR1510 MUR1515 MUR810 MUR815 RURG3010
Contextual Info: 150A RURP8120 RURP15120 RURP30120 RURG30120 RURG50120 RURG75120 RURU50120 RURU75120 RURU100120 RURU150120 2.1V 110ns 2.1V 130ns 2.1V 150ns 2.1V 150ns 2.1 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 1200V S E M I C O N D U C TO R NOTE: VF at IF AVG , TJ = 25oC; trr at IF(AVG), dIF/dt = 100A/µs or 200A/µs, TJ = 25oC; † trr at IF = 1A.

igbt 1000v 80a

Abstract: 30A, 600v DIODE
Contextual Info: — MCT/IGBT/DIODES — 5 ULTRAFAST SINGLE DIODES PAGE SELECTION G U ID E . 5-3 MUR810, MUR815,

TO-263

Abstract: TO263 POWER TRANSISTORS 600v HGT1S20N35G3VLS
Contextual Info: INSULATED GATE BIPOLAR T R A N S I S T O R S The U FS SE R IE S of IGBTs Insulated specified in surface-mounted packages variety of applications requiring high Gate Bipolar Transistors is available in ranging from TO-252AA to TO-263AB. power control. 600V and 1200V ratings and may be

MUR1520 equivalent

Abstract: MUR850 BYW51150 MUR1550 MUR880 MUR1510 MUR810 RURD410 RURD610 RURD610S
Contextual Info: 75A/80A 100A 150A MUR1550 RURP3050 RURG3050 RURG5050 RURG8050 RURU5050 RURU8050 RURU10050 RURU15050 MUR850 RURP1550 RURP850 60ns 1.5V 60ns 1.5V 60ns 1.6V 75ns 1.6V 85ns 1.6V 75ns 1.6V 85ns 1.6V 100ns 1.6V 100ns 60ns 1.5V 60ns† 1.5V MUR8100E RURP15100 RURP30100 RURG30100 RURG50100 RURG80100 RURU50100 RURU80100 RURU100100 RURU150100

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning: