RHRD4120S Search Results

HR4120

Abstract: RHRD4120 RHRD4120S RHRD4120S9A HR4120 INTERSIL
Contextual Info: RHRD4120, RHRD4120S Data Sheet January 2000 File Number 3626.4 4A, 1200V Hyperfast Diodes Features The RHRD4120 and RHRD4120S are hyperfast diodes with soft recovery characteristics trr < 60ns . They have half the recovery time of ultrafast diodes and are silicon nitride

HR4120

Abstract: RHRD4120 RHRD4120S RHRD4120S9A
Contextual Info: RHRD4120, RHRD4120S Data Sheet January 2002 4A, 1200V Hyperfast Diodes Features The RHRD4120 and RHRD4120S are hyperfast diodes with soft recovery characteristics trr < 60ns . They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.

HR4120

Abstract: RHRD4120 RHRD4120S RHRD4120S9A
Contextual Info: RHRD4120, RHRD4120S S E M I C O N D U C T O R 4A, 1200V Hyperfast Diodes March 1997 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <60ns JEDEC STYLE TO-251 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C

hr 4120

Abstract: 4-120S 4120S
Contextual Info: RHRD4120, RHRD4120S H A R R IS S E M I C O N D U C T O R 4A, 1200V Hyperfast Diodes April 1 9 9 5 Package Features JE D E C S T Y LE TO-251 • Hyperfast with Soft R ecovery.<60ns • Operating T em p eratu

Contextual Info: RHRD4120, RHRD4120S S em iconductor March 1997 File Number 3626.3 4A, 1200V Hyperfast Diodes Features RHRD4120 and RHRD4120S TA49056 are hyperfast diodes with soft recovery characteristics (tp p < 60ns). They have half the recovery time of ultrafast diodes and are silicon

hr4120

Abstract: Hyperfast Diode 1200V RHRD4120 RHRD4120S RHRD4120S9A 1475C
Contextual Info: interrii RHRD4120, RHRD4120S J a n u a ry . Data Sheet m i File Num ber 3626.4 4A, 1200V Hyperfast Diodes Features The RHRD4120 and RHRD4120S are hyperfast diodes with soft recovery characteristics trr < 60ns . They have half the recovery time of ultrafast diodes and are silicon nitride

HR4120

Abstract: RHRD4120 RHRD4120S RHRD4120S9A
Contextual Info: RHRD4120, RHRD4120S S E M I C O N D U C T O R 4A, 1200V Hyperfast Diodes April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <60ns JEDEC STYLE TO-251 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C

hr 4120

Abstract: HR4120 hr 4120 diode RHRD4120 RHRD4120S RHRD4120S9A
Contextual Info: RHRD4120, RHRD4120S Data Sheet File Number 3626.4 4A, 1200V Hyperfast Diodes Features The RHRD4120 and RHRD4120S are hyperfast diodes with soft recovery characteristics trr < 60ns . They have half the recovery time of ultrafast diodes and are silicon nitride

BYW19-1000

Abstract: BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200
Contextual Info: 41892.6 - FO-012 CROSSREF 11/19/98 10:54 AM Page 1 Harris Semiconductor-An Industry Leader For More Information: Harris Semiconductor comprises one sector of Harris Harris Marketing Support and ask for extension #7820

RHRG3040

Abstract: RHRU100120 RHRG30120 RHRD640S RHRG1550CC RHRD440 RHRG5040 RHRG7540 RHRP1540 RHRP3040
Contextual Info: 8A RHRD6120 RHRD6120S 3.2V 65ns RHRP8120 3.2V 70ns RHRP15120 3.2V 75ns RHRP15100 3.0V 70ns RHRP1590 3.0V 70ns RHRP1580 3.0V 70ns RHRP1570 3.0V 70ns RHRP1560 2.1V 40ns RHRP1550 2.1V 40ns RHRP1540 2.1V 40ns 15A RHRP30120 3.2V 75ns RHRP30100 3.0V 75ns RHRP3090

100ns

Abstract: RHRP15120 hru150 rhrp30120
Contextual Info: HARRIS HYPER-FAST RECOVERY RECTIFIER PRODUCT LINE TO-252 TO-251 TO-220AC 'F AVG 'F(A V G ) 6A 4A SA 8A 15A 30A 30A 50A 'F (A V G ) 75A 50A 75A 100 A 150A RHRD440 RHRD640 2.1V 35ns 2.1V 35ns RHRD440S 2.1V 35ns RHRD640S RHRP840 2.1V 35ns 2.1V 35ns RHRP1540

TO-263

Abstract: TO263 POWER TRANSISTORS 600v HGT1S20N35G3VLS
Contextual Info: INSULATED GATE BIPOLAR T R A N S I S T O R S The U FS SE R IE S of IGBTs Insulated specified in surface-mounted packages variety of applications requiring high Gate Bipolar Transistors is available in ranging from TO-252AA to TO-263AB. power control. 600V and 1200V ratings and may be

RURU8060

Abstract: 3 phase motor control FM2G75US60 1N4004 SMA smps welding machine Piezoelectric 1Mhz FFPF60B150DS INDUCTION HEATING SGS5N150UF 150 KW motor
Contextual Info: IGBT and Rectifier Selection Guide February 2002 Discrete IGBTs 1 Automotive Ignition IGBTs 6 IGBT Smart Power Modules SPM 7 IGBT Modules 8 HyperFast/UltraSoft Recovery Rectifiers (Stealth Family) 9 HyperFast Recovery Rectifiers 10 UltraFast Recovery Rectifiers

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

MUR840

Abstract: ultrafast recovery dual rectifier RHRP8120 RHRU100120 Hyperfast Diode 1200V RURG8060 smps design 32V MUR1520 MUR820 RURD420
Contextual Info: FO-011.2 5/12/00 12:09 PM Page 1 I N T E R S I L C O R P O R AT I O N B U I L D I N G S I L I C O N A D V A N TA G E S F O R T EC H N O LO GY U LT R A F A S T A N D H Y P E R F A S T RECTIFIERS Intersil Corporation provides the silicon advantage in a burgeoning market

FEP16BT

Abstract: FEP16CTA FEP16FTD ISL9R3060G2 RHRU100120 RURU8060 FEP16ATD fep16dta FFAF30U60DN ffpf30u20s
Contextual Info: Discrete Ultrafast Recovery Rectifiers Configuration VRRM V IF (AV) (A) VF Max (V) trr Max (ns) IRM or IR Max (uA) ta@125°C Typ (ns) tb@125°C Typ (ns) EGP20A Single 50 2 0.95 50 5 - - EGP20B Single 100 2 0.95 50 5 - - EGP20C Single 150 2 0.95 50 5 - -

RHRG3040

Abstract: 100ns RHRG1550CC RHRU100120 RHRD440 RHRD440S RHRD640 RHRD640S RHRP1540 RHRP3040
Contextual Info: 15A 30A 30A 50A 75A 50A 75A 100A S E M I C O N D U C T O R ITALICS = Future Product Offerings; VF at IF AVG , TJ = 25oC; TRR at IF(AVG), dIF/dt = 100A/µsec TJ = 25oC; † TRR at IF = 1A RHRP8120 RHRP15120 RHRP30120 RHRG30120 RHRG50120 RHRG75120 RHRU50120 RHRU75120 RHRU100120

diode 6A 1000v

Abstract: diode 400V 4A Hyperfast Diode 1200V IGBT 1000V .50A RHRP3060 400v 50A DIODE rhrp15120 rhrp860 diode rhrp8120 diode RHRP3080
Contextual Info: _ MCT/IGBT/DIODES 7 HYPERFAST SINGLE DIODES PAGE SELECTION G U ID E . 7-3 HYPERFAST SINGLE DIODE DATA SHEETS

RURU8060

Abstract: RURD620 MUR1520 equivalent RHRU100120 MUR1520 MUR1540 MUR1560 MUR8100E MUR820 MUR840
Contextual Info: Rectifier Selection Tree TM File Number RECTIFIER PRODUCTS ULTRAFAST RECOVERY MUR1520 MUR1540 MUR1560 MUR8100E MUR820 MUR840 MUR860 RURD4120 RURD4120S RURD420 RURD420S RURD460 RURD460S RURD6120 RURD6120S RURD620 RURD620S RURD660 RURD660S RURD840 RURD840S RURD860

BYX49-600

Abstract: BYW19-1000 BY229-1000 motorola diode cross reference BYX49 1200 BYX49-1200 BYV72E-200 BYT29 BYT29-300 BY229/1000
Contextual Info: FO-012.1 5/12/00 12:05 PM Page 1 I N T E R S I L C O R P O R AT I O N B U I L D I N G S I L I C O N A D V A N TA G E S F O R T EC H N O LO GY U LT R A F A S T A N D H Y P E R F A S T RECTIFIERS Intersil Corporation provides the silicon advantage in a burgeoning market

MOSFET 1200v 30a

Abstract: Rad hard for Harris 32v smps RHRU100120 RHRG3060c harris mur1520 MUR820 RURD420 RURP820C
Contextual Info: 41892.6 - FO-011 SELECTION 11/19/98 10:57 AM Page 1 Harris Semiconductor-An Industry Leader Harris Semiconductor comprises one sector of Harris Product Line Selection Corporation, an international communications and electronics For More Information: Harris On-Line Services:

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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