HGTD1N120BNS9A Search Results

Contextual Info: HGTD1N120BNS, HGTP1N120BN Data Sheet January 2001 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar

EM- 546 motor

Contextual Info: HGTD1N120BNS, HGTP1N120BN Data Sheet February 1999 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar

MOSFET 1200v 3a

Abstract: HGTD1N120BNS HGTD1N120BNS9A HGTP1N120BN RHRD4120 TB334 1N120BN 1N120B
Contextual Info: HGTD1N120BNS, HGTP1N120BN Data Sheet January 2001 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

1N120BN

Contextual Info: HGTD1N120BNS, HGTP1N120BN February 1999 Data Sheet 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar

HGTD1N120BNS

Abstract: HGTD1N120BNS9A HGTP1N120BN RHRD4120 TB334
Contextual Info: HGTD1N120BNS, HGTP1N120BN Data Sheet January 2000 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar

1N120BN

Abstract: 1N120B HGTD1N120BNS HGTD1N120BNS9A HGTP1N120BN TB334
Contextual Info: HGTD1N120BNS, HGTP1N120BN Data Sheet January 2000 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar

JESD22-A108

Abstract: JESD22-A105 JESD22A108 a105 transistor JESD22-A102 JESD-22-A108 JESD22-A110-b JESD22A110B jesd22a105 igbt qualification circuit
Contextual Info: Date Created: 4/6/2004 Date Issued: 4/19/2004 PCN # 20041405 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL References FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.