HM65256BP Search Results

HM65256B-12

Abstract: HM65256 HM68 HM65256BLP-10 HM65256B-20 65256B
Contextual Info: HM65256B Series 32768-word X 8-bit High Speed Pseudo Static RAM • FEATURES HM65256BP Series • • Single 5V ±10% High Speed Access Time CE Access T im e . 100/120/150/200ns Address Access T im e .50/60/75/100ns

Contextual Info: HI T A C H I / LOGIC/ARRAVS/riEM a*JE J> 4*Hba03 0Qlt.b57 1 HM65256B Series 32768-word X 8-bit High Speed Pseudo Static RAM • FEATURES • • HM65256BP Series Single 5V ±10% High Speed Access Time CE Access T i m e . 100/120/150/200ns

rca thyristor manual

Abstract: HN623258 101490
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j

HM652568

Abstract: HM65256BLSP10 HM65256 HM65256BLP-12 HM65256BFP-10T HM65256BFP-12 HM65256BLP-10 65256B
Contextual Info: HM65256B Series 5 .0 V S u p p l y 32,768-word x 8-bit High Speed Psuedo Static RAM Features • Single 5 V ±10% • Access time — CE access time: 100/120/150/200 ns — Address access time: 50/60/75/100 ns (in static column mode) • Cycle time — Random read/write cycle time:

HM65256BFP-12T

Abstract: HM65256BLP-10 HM65256BLSP-10 HM65256BLSP10
Contextual Info: HMGS2S6B Series 32768-word X 8-bit High Speed Pseudo Static R A M • FE A T U R ES • Single 5V ±10% • High Speed Access Time CE Access T im e . 100/120/150/200ns Address Access Tim e. 50/60/75/100ns

HM65256

Contextual Info: HM65256B Series 32768-word X 8-bit High Speed Pseudo Static RAM • FEA T U R ES • Single 5V ±10% • High Speed Access Time CE Access T im e . 100/120/150/200ns Address Access T im e. 50/60/75/100ns

HM65256BLP-10

Abstract: dp - 20t DG250 HM65256BFP-12T HM65256B HM65256BFP-10T HM65256BFP-15T HM65256BFP-20T HM65256BLFP-10T HM65256BLFP-12T
Contextual Info: HM65256B Series 5.0 V S u p p ly 32,768-w ord x 8-bit H ig h S p e e d P s u e d o S ta tic R A M Features • Single 5 V ±10% • Access time — CE access time: 100/120/150/200 ns — Address access time: 50/60/75/100 ns (in static column mode) • Cycle time

HM6116L

Abstract: HM51256P HN62404P HM65256AP HN27C301G HN613128P hn623257 HM6147 HN27256P HN613128FP
Contextual Info: • PACKAGE INFORMATION • Dual-in-line Plastic Unit: mm {inch Scale 1/1 • D P -1 6 B • D P -1 8 19 2 Í0 756) 20 32m a , J L 2 54 - 0 .2 5 C 48 - O f <■ 0 !00 ' 0 0 10> ( o 0 19 ' 0 0 0 4 ) ■J-L 0 l5 ii '"To.OlO-.«» 2 54 * 0 25 □ Í8 • 0

101490

Abstract: P22n HM50464P-12 50464 ram
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY

65256

Abstract: UPD42832C-15 PD42832C-15L UPD42832C-12L HM65256AP HM65256BLP-12 HM65256BP-12 LH5P832-10 upd42832 HM65256BP-10
Contextual Info: - 138 - 2 5 6 K X M % tt TAAC £ CC max ns) TCAC (ns) Pseudo A TOE -/ -fTOD ^ S t a t i c / TWP max (ns) TOH lain (ns) max (ns) min (ns) RAM (3 2 7 6 8 x 8 ) Í# tt TDS •in 2 8 P I N À an TWO TWR (ns) min (ns) min (ns) max (ns) TDH V D D or V C C (V)

HM65256BLP-10

Abstract: HM65256BFP-10T HM65256BLP-12 HM65256BLFP-10T HM65256BLSP10 HM65256B HM65256BFP-12T HM65256BFP-15T HM65256BFP-20T HM65256BLFP-12T
Contextual Info: HM65256B Series 32,768-word x 8-bit High Speed Psuedo Static RAM Features • Single 5 V ±10% • Access time — CE access time: 100/120/150/200 ns — Address access time: 50/60/75/100 ns (in static column mode) • Cycle time — Random read/write cycle time: