2SC3846 Search Results

5011s

Abstract: 2SC3846
Contextual Info: FU JI TS U M I C R O E L E C T R O N I C S 31E D E3 374=57b2 QOlbbBM S Q F f l l T '3 3-/3 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE^ 2SC3846 Silicon High Speed Power Transistor 2SC3846 800V, 6A A B S O LU T E M A X IM U M R ATIN G S Parameter Storage Temperature Range

2SC3843

Abstract: 2SC3846 2SC3842 5011s 2SC3844 2SC3845 2SC3847 2SC3947 2SC3948 2SC3949
Contextual Info: FU JI TS U M I C R O E L E C T R O N I C S 31E D E3 374=57b2 Q O l b b B M S Q F f l I T~23 cP January 1990 Edition 1.1 FUJITSU P R O D U C T P R O F IL E - 2SC3846 Silicon High Speed Power Transistor 2SC3846 800V, 6A A B S O L U T E MAXIMUM R A T IN G S Parameter

Contextual Info: 2SC3846 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)1.2k I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC3819

Abstract: 2SC3852A 2SC3818 PA2012 2SA1488 251C 2SC3815 2SC3817 2SC3820 2SC3821
Contextual Info: - 174 - Ta=25^C, *EPÍáTc=25eC m 2SC3815 % ít S B m m & 900MHz PA Vc b o Vc e o (V) (V) m Ic(DC) Pc Pc* (A) (W) (W) 20 12 1.5 I c bo (max) (/¿A) 17.5 V’cB % (min) M tÉ (max) (V) 250 15 (Ta=25cO ) [*En(itypfiI] hF E 20 200 VCE (V) Ic/lE (A) (V) 7 0.2

2SC3844

Abstract: 2SC3847 2SC3842 2SC3843 2SC3845 2SC3846 2SC3947 2sc3948
Contextual Info: FUJITSU MICROELECTRONICS 31 E 3?m?b2 D OGlbbSñ F MI 2 r - 3 3 ~ 13 January 1990 Edition 1.1 Fujitsu PRODUCT P R O FILE : 2SC3847 Silicon High Speed Power Transistor 2SC3847 800V, 10A ABSOLUTE MAXIMUM RATINGS Parameter Symbol Storage Temperature Range T*tg

2SC3843

Abstract: 2SC3845 2SC3842 2SC3844 2SC3846 2SC3847 2SC3947
Contextual Info: FU JI TS U M I C R O E L E C T R O N I C S 374=17ta 0 ü l b b 3 0 ö O I F M I 31E D T - 3 i'l3 January 1990 Edition 1.1 FUJITSU P R O D U C T PR O FILE - 2SC3845 Silicon High Speed Power Transistor 2SC3845 800V, 3A A BSO LU T E M A X IM U M R A T IN G S

2SC3847

Abstract: 2SC3842 2SC3843 2SC3844 2SC3845 2SC3846 2SC3947
Contextual Info: FUJITSU MICROELECTRONICS 31E D B 3 7 4 c]7t.5 D 0 1 b b 4 S 4 Q FMI r January 1990 Edition 1.1 - — - 3 3 FUJITSU PRODUCT PROFILE 2SC3947 Silicon High Speed Power Transistor 2SC3947 50 0 V , 5A A B S O L U T E M A X IM U M R A T IN G S Parameter Sym bo l

2SC3845

Abstract: 2SC3842 2SC3847 2SC3844 6011s 2SC3843 2SC3846 fujitsu tg h
Contextual Info: 31E J> FUJITSU MICROELECTRONICS O 374^7^2 D01bb52 QFMI cP January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE- 2SC3843 Silicon High Speed Power Transistor 2SC3843 450V, 10A A BSO LU T E M A X IM U M R A T IN G S Parameter Sym b ol C onditions Rating U nit -5 5 ~ +150

2SC3842

Abstract: 2SC3847 2SC3948 2SC3843 2SC3844 2SC3845 2SC3846 2SC3947 2SC3949
Contextual Info: FU JI TSU M I C R O E L E C T R O N I C S 31E D C2 3 7 4 ci?t,B O O l b b S O 3 E I F M I r - 3 January 1990 Edition 1.1 FUJITSU PRODUCT P R O FILE- 2S C 3949 Silicon High Speed Power Transistor 2SC3949 500V , 15A ABSOLUTE M A X IM U M RATIN GS Parameter Sym bol