37MT7B2 Search Results

Contextual Info: 7 " FUJITSU MI CROELECTRONI CS 47E D • 37MT7b2 7 7 001fi3bl - 0 ? b ■FU I FUJITSU October 1990 DATA SHEET■ M3 Series D101 Piezoelectric Device Modulator, 50 MHz to 300 MHz These piezoelectric modulators feature direct oscillators (50 MHz to 300 MHz). The

2SC3844

Abstract: 2SC3842 2SC3843 2SC3845 2SC3846 2SC3847 2SC3947 2SC3948
Contextual Info: FU JI TSU MICROELECTRONICS 31E D 37MT7b2 ÜQlbbilb 1 IF M I T Ja n u a ry 1990 Edition 1.1 — . FUJITSU P R O D U C T P R O F ILE - — - 2 2SC3948 Silicon High Speed Power Transistor 2SC3948 500V, 10A A B S O L U T E MAXIMUM R A TIN G S Parameter

2SC3948

Contextual Info: MICROELECTRONICS 31E D 37MT7b2 ÜQl b bi l b IF M I T - 2 3 - I3 January 1990 Edition 1.1 — 1 . FUJITSU PRODUCT PROFILE - — 2SC3948 Silicon High Speed Power Transistor 2SC3948 500V, 10A A BSO LU T E M A X IM U M R A T IN G S P aram eter Sym bol S to ra ge T e m p e ra tu re R a nge

B634X

Abstract: lu1414 Standard TTL AOI Dual 2-Wide 2-Input LU18 c17b2 H8E0
Contextual Info: FUJITSU MICROELECTRONICS 31E I El 3 7 i n 7 ba ÜG13>435 b B F M 0 T - n - l - D January 1990 Edition 1.1 P R O D U C T PR OFILE AU Series CMOS Gate Arrays DESCRIPTION Tha AU series of 1 .2 |im CMOS gate arrays, available in eight device types with from 1 0 K to 100K gates, achieves the ultra fast

2SC3844

Abstract: 2SC3847 2SC3842 2SC3843 2SC3845 2SC3846 2SC3947 2sc3948
Contextual Info: FUJITSU MICROELECTRONICS 31 E 3?m?b2 D OGlbbSñ F MI 2 r - 3 3 ~ 13 January 1990 Edition 1.1 Fujitsu PRODUCT P R O FILE : 2SC3847 Silicon High Speed Power Transistor 2SC3847 800V, 10A ABSOLUTE MAXIMUM RATINGS Parameter Symbol Storage Temperature Range T*tg

MB8416-20L

Abstract: DIP-24C-C03 mb8416 MB8416-20 PH 37M
Contextual Info: FUJITSU MICROELECTRONICS 78 DE| 37417bB c:iO !.1rm 6 _ F U J IT S U N ICS, INC. M ICRO ELECTRO CMOS 16384-BIT STATIC RANDOM ACCESS MEMORY T_46_23 MB8416-20 MB8416-20L DESCRIPTION The Fujitsu MB8416 is a 2048 word by 8-bit static random ac­ cess memory fabricated with high

Contextual Info: FUJITSU M I C RO EL ECTR ON ICS 23E D 374T7LS 0000217 4 October 1989 Edition 1.0 - FUJITSU DATASHEET : MBM101474A-3 4096-B IT BIPOLAR ECL RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MEJM101474A Is fuly decoded 4096-blt ECL read/write random access memory designed or high-speed scratch pad, control and buffer storage applications.

Contextual Info: FUJITSU MIC ROE LECTRONIC S 47E D • 374^71^ OOlflflD? 1 ■ May 1990 Edition 1.0 FUJITSU DATA SHEET ~ p 4 tr-J L 3 -Q MB81C81A-25/-35 CMOS 256K-BIT HIGH-SPEED SRAM 256K Words x 1 Bit High-Speed CMOS Static Random AccfeSs Memory Th» Fujitsu MB81C81A is a 262,144 words x 1 bit static random access memory

ZC40

Abstract: sz05 SZ05A-10 8265A
Contextual Info: FUJITSU MICROELECTRONICS 7fl DE I 3 7 ^ 7 ^ 2 □ OGE'ìflD T . _ 78C 02980_ 3749762 FUJITSU MICROELECTRONICS 1^0Sÿ5536lBIT M FUJITSU DYNAMIOiRANDOM ÄO ESSl/IEM ORY MB 8265A-10 MB 8265A-12 MB 8265A-15 65,536-BIT DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB 8265A is a fully decoded, dynamic random access memory

8876A

Abstract: 8877A K 4107 fd1791 Fujitsu VCO ceramic MB8877A
Contextual Info: FU JI TSU M I C R O E L E C T R O N I C S W D 37 4*17 b2 0QD474b 0 • F M I !«M9<aifp FL O P P Y D IS K V F O The Fujitsu MB 4107 is a variable-frequency oscillator VFO 1C for use In floppy-disk Interfaces. It provides a complete data separation function, with a minimum of external parts and no adjustments, and can be used with a variety of disk controllers.

MB3731

Abstract: 2 x 1w audio amplifier circuit diagram hf 1W amplifier T-74-05-0
Contextual Info: 'T 'ltl'O Z '-O i FUJITSU MICROE LE CTRON ICS 31E » H 374^2 GOlSTfll 2 BIFfll FU JITSU September 1988 Edition 1.0 18 W BTL AUDIO POWER AMPLIFIER The Fujitsu MB3731 Is designed for a low-frequency hlgh-power amplifier with Internal BTL Balanced Transformer Less circuitry. The MB3731 Is packed In

2SC3843

Abstract: 2SC3845 2SC3842 2SC3844 2SC3846 2SC3847 2SC3947
Contextual Info: FU JI TS U M I C R O E L E C T R O N I C S 374=17ta 0 ü l b b 3 0 ö O I F M I 31E D T - 3 i'l3 January 1990 Edition 1.1 FUJITSU P R O D U C T PR O FILE - 2SC3845 Silicon High Speed Power Transistor 2SC3845 800V, 3A A BSO LU T E M A X IM U M R A T IN G S

cl2v

Abstract: CX2V-T2 MBB464A tms 374 MB8444 H7B2 MB84 MB8464A-10-W MB8464A-15-W MB64MA
Contextual Info: 1 F U J I T S U M IC R O E L E C T R O N IC S 7 ê D e J 37Mci ? b 2 Q0G33ÔD 1 1 3 749762 T u j TTSU 'H ICR O ELECTRO N ICS 7ttC U33BU OrT-46-23- Prelim inary FUJITSU M O S M e m o rie s • M B 8 4 6 4 A - 1 0 - W , M B 0 4 6 4 A - 1 5 - W C M O S 65,536-Bit Static

pll synthesizer 16 pin dip

Contextual Info: F U J I T S U M I C R O E L E C T R O N I C S =17 DE | 3 7 4 Ì 7 ka 0 0 0 5 3 2 0 M 3749762 FUJ ITSU M I C R O E L E C T R O N I C S FUJITSU 970 05320 CMOS PLL FREQUENCY SYNTHESIZER D T - W - R - IJ M B 87014 October 1986 Edition 1.0 CMOS SERIAL INPUT PLL Frequency Synthesizer

Contextual Info: FUJITSU MICROE LE CTRON ICS 31E » GOlb^ST 0 • F M I <p March 1990 Edition 3.0 DATA SHEET _ FUJITSU MB87073 CMOS PLL FREQUENCY SYNTHESIZER CMOS SERIAL INPUT PHASE-LOCKED-LOOP PLL FREQUENCY SYNTHESIZER The Fujitsu MB87073, fabricated in advanced CMOS technology, is a serial

IC free

Abstract: upd765 FD1791 upd765 floppy disk controller
Contextual Info: FUJITSU MICROELEC TRONICS 31E T> 37MT7bS OGlbOlfl 5 BIFMI FU JITSU 000002020202020202020101010001010101 February 1989 Edition 2.0 FLOPPY DISK V F O The Fujitsu MB4107A is a variable-frequency oscillator VFO IC fo r use in floppy-disk interfaces. It provides a complete data separation function, w ith a

c01 ic memory tv

Abstract: OD034
Contextual Info: FUJITSU MICROELECTRONICS 7fl D E | 37417^2 0003402 7 3 7 4 9 7 6 2 FUJIT SU M I C R O E L E C T R ON I C S F U JIT S U 78Ç 03402 T-46-23-12 MB 8128-10 MB 8128-15 M 0 S % 1 6 3 8 4 -:b IT : ? X S T A T I C 4R A Ñ D 0 M r# ACCESS ~ M EMORY^ 16384-BIT STATIC RANDOM ACCESS MEMORY WITH

DNR2

Abstract: half adder circuit using 2*1 multiplexer TTL nand gate twin ER22T RA23 ECL IC NAND
Contextual Info: FUJ I TS U M I C R O E L E C T R O N I C S 31E D 374^71=2 ÜG14Li32 February 1990 Edition 1.1 DATA S H E E T 2 IF li I FUJITSU ET10000H, E10000H T - f a - u - i z Gate Arrays DESCRIPTION Th e Fujitsu H -Series E C L gate array family offers designers an outstanding combination of cell density, high I/O capability, speed,

AG QC TRANSISTOR

Abstract: MB712
Contextual Info: 3749762 p h -HTSU J4ICR0[ELECTRONICS FUJITSU niCROELECTRONICS 78C D3797 7fi - □ □ □ 3 7 c57 1 F U JIT S U Bipolar Memories MB7128E-W High Speed Schottky TTL 8,192-Bit PROM Description The Fujitsu M B7128E-W is a high speed Schottky T T L electrically

ICE 47E

Contextual Info: FUJITSU MICROELEC TRONICS October 1989 Edition 1.0 MB81C79B-35/-45 M7E D DATA SHEET : 374^71,2 OOlñ'i'ifi 1 • F M I _ FUpSU CMOS 72K-BIT HIGH-SPEED SRAM 8K Words x 9 Bits High-Speed CMOS Static Random Access Memory with Automatic Power Down The Fujitsu MB81C79B is a 8,192 words x 9 bits static random access memory

2SC3847

Abstract: 2SC3842 2SC3843 2SC3844 2SC3845 2SC3846 2SC3947
Contextual Info: FUJITSU MICROELECTRONICS 31E D B 3 7 4 c]7t.5 D 0 1 b b 4 S 4 Q FMI r January 1990 Edition 1.1 - — - 3 3 FUJITSU PRODUCT PROFILE 2SC3947 Silicon High Speed Power Transistor 2SC3947 50 0 V , 5A A B S O L U T E M A X IM U M R A T IN G S Parameter Sym bo l

2SC3842

Abstract: 2SC3843 2SC3844 2SC3845 2SC3846 2SC3847 2SC3947
Contextual Info: FUJITSU MICROELECTRONICS 31E D a 374R7b5 G01bb2b b SFMI T-33 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC3844 Silicon High Speed Power Transistor 2SC3844 450V, 15A A B S O LU T E M A X IM U M R ATIN G S Parameter Storage Tem perature Range Junctio n Tem perature

2SC3842

Abstract: 2SC3847 2SC3948 2SC3843 2SC3844 2SC3845 2SC3846 2SC3947 2SC3949
Contextual Info: FU JI TSU M I C R O E L E C T R O N I C S 31E D C2 3 7 4 ci?t,B O O l b b S O 3 E I F M I r - 3 January 1990 Edition 1.1 FUJITSU PRODUCT P R O FILE- 2S C 3949 Silicon High Speed Power Transistor 2SC3949 500V , 15A ABSOLUTE M A X IM U M RATIN GS Parameter Sym bol