MB81C81A Search Results

dual power supply block diagram

Contextual Info: CMOS 262,144 BIT STATIC RANDOM ACCESS MEMORY FU JITSU MB81C81A-35 MB81C81A-45 May 1988 Edition 1.0 262,144 WORDS X 1 BIT HIGH SPEED CMOS STATIC RANDOM ACCESS MEMORY •a The Fujitsu MB81C81A Is 262,144 words x 1 bit static random access memory fabricated with a CMOS technology.

pin diagram of ic TAA 762

Abstract: MB81C81A MB81C81A-25 MB81C81A-35
Contextual Info: May 1990 Edition 1.0 FUJITSU DATA SHEET : MB81C81A-25/-35 CMOS 256K-BIT HIGH-SPEED SRAM 256K Words x 1 Bit High-Speed CMOS Static Random Access Memory The Fujitsu MB81C81A is a 262,144 w ords x 1 bit static random access memory fabricated with a CMOS technology. The MB81C81A uses NMOS cells and CMOS

Contextual Info: May 1990 FUJITSU PRODUCT PROFILE • MB85420-40/50 CMOS STATIC RAM MODULE 262144 Words X 8-Bit The Fujitsu MB85420 is a fully decoded, CMOS static random access memory module SRAM with eight MB81C81A devices mounted on a 60-pin Epoxy module. Two SELECT pins provide expansion to 512K four

c4547

Abstract: MB85410
Contextual Info: November 1989 Edition 1.0 FUjlTSU DATA SHEET : MB85420-40/-50 256K X 8 CMOS SRAM MODULE CMOS 262,144 WORDS x 8-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85420 is a fully decoded, CMOS static random access memory module consists of eight MB81C81A devices mounted on a 60-pin plastic board.

Contextual Info: FUJITSU MIC ROE LECTRONIC S 47E D • 374^71^ OOlflflD? 1 ■ May 1990 Edition 1.0 FUJITSU DATA SHEET ~ p 4 tr-J L 3 -Q MB81C81A-25/-35 CMOS 256K-BIT HIGH-SPEED SRAM 256K Words x 1 Bit High-Speed CMOS Static Random AccfeSs Memory Th» Fujitsu MB81C81A is a 262,144 words x 1 bit static random access memory

Contextual Info: FUJI SU 256K X 8 CMOS SRAM MODULE MB85403A-40 MB85W3A-50 T S 2 6 1 -A 8 8 Y N o v . 1988 CMOS 262,144 Words x 8-Bit STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85403A is a fully decoded, CMOS static random access memory module consists of eight MB81C81A devices mounted on a 44-pin ceramic board.

Contextual Info: November 1989 Edition 1.0 FUJITSU DATASHEET MB85420-40/-50 256K X 8 CMOS SRAM MODULE CMOS 262,144 WORDS x 8-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85420 is a fully decoded, CMOS static random access memory module consists of eight MB81C81A devices mounted on a 60-pin plastic board.

Contextual Info: May 1990 Edition 1.0 FUJITSU DATA SHEET MB81C81A-25/-35 CMOS 256K-BIT HIGH-SPEED SRAM 256K Words x 1 Bit High-Speed CMOS Static Random Access Memory The Fujitsu MB81C81A is a 262,144 words x 1 bit static random access memory fabricated with a CMOS technology. The MB81C81A uses NMOS cells and CMOS

km681001j-20

Abstract: TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20
Contextual Info: Cross Reference Guide Cross Reference Guide ALLIANCE VS PARADIGM AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ AS7C1028-15TJ AS7C1028-20TJ AS7C1028L-10TJ AS7C1028L-12TJ

Contextual Info: FUJITSU 256K X 8 CMOS SRAM MODULE MB85403A-M MB85W3A-50 TS261-AÔ8Y Nov. 1988 CMOS 2 6 2 , 1 4 4 W o r d s x 8 - B i t S T A T I C RAND CM ACCESS MEMORY MODULE The Fujitsu MB85403A is a fully decoded, CMOS static random access memory module consists of eight

Contextual Info: FUJITSU M I C RO EL EC TRON IC S 23E D 374T7b2 DQQ7hSb 3 T ^ k -2 S -0 S FU JITSU CMOSV262,144jBll STATICS RANDOM 900202024801010101010000000202010201 a c c e s s ím e m o r May 1988 Edition 1.0 262,144 WORDS X 1 BIT HIGH SPEED CMOS STATIC RANDOM ACCESS MEMORY

Contextual Info: TS281-A89Z Decem ber 1989 FUJITSU DATA SHEET MB82B81-15/-20 256K BIT HIGH SPEED BI-CMOS SRAM 262,144-WORD x 1-BIT Bi-CMOS HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82B81 is a 65,536 words by 1 bits static random access memory fabricated with a CMOS silicon gate process. To make power dissipation lower and high speed, peripheral

Contextual Info: September 1990 Edition 1.0 FUJITSU DATA SHEET MB82B81-15/-20 256K-BIT HIGH-SPEED BiCMOS SRAM 256K Words x 1 Bit BiCMOS High-Speed Static Random Access Memory The Fujitsu MB82B81 is a static random access memory organized as 262,144 words x 1 bit and fabricated with a CM OS silicon gate process. BiCMOS technology is used in

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

Contextual Info: September 1990 Edition 1.0 FUJITSU DATA SHEET MB82B81 15/-20 256K-BIT HIGH-SPEED BiCMOS SRAM - 256K Words x 1 Bit BiCMOS High-Speed Static Random Access Memory The Fujitsu MB82B81 is a static random access memory organized as 262,144 words x 1 bit and fabricated with a CMOS silicon gate process. BiCMOS technology is used in

24PIN

Abstract: MB81C81-45 MB81C81-55 MB81C81A-25 MB81C81A-35 262144x1 ram
Contextual Info: 104 25 6K m & tt £ * îs æ k s rc> TAAC TCAC TOE •ax sax max ns (ns) (ns) 4 CMOS S t a t i c 7 f y ^ íí TOH TOD TWP min max •in (ns) (ns) (ns) TDS min (as) RAM ( 2 6 2 14 4 x 1 ) TDH TWD TWR sin min max (ns) (ns) (ns) VI)D or VCC (V) 24PI N m 3 ft

17B2

Contextual Info: FUJITSU MICROELECTRONICS 31E D 3?4=J7b2 0 0 1 3 3 5 S ñ ÖFM I May 1990 T -^ -2 3 ~ Fufrsu PRO D U CT P R O FILE • M B 85421-40/50 CMOS STATIC RAM MODULE ■« VfeKÍ- 262144 Words x 9-Bit The Fujitsu MB85421 is a fully decoded, CMOS static random access