2SC1383
Abstract: 2SA0683 2SA0684 2SC1384 2SC1383 transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92MOD FEATURES z Low collector to emitter saturation voltage VCE(sat). z Complementary pair with 2SA0683 and 2SA0684. 1.EMITTER
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o-92mod2sc13832sc13842sa0683+32sa0684500ma2sc1383 transistor
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92L FEATURES z Low Collector to Emitter Saturation Voltage VCE(sat). z Complementary Pair with 2SA0683 and 2SA0684. 1.EMITTER 2.COLLECTOR
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2sc1384a
Abstract: 2SC1384 SJC00421AED 2SC1384 PANASONIC
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1384 Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0684 • Features Package Low collector-emitter saturation voltage VCE(sat)
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2002/95/ec2sc13842sa0684o-92l-a1+32sc1384asjc00421aed2sc1384 panasonic
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm 5.9±0.2 • Features 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 • Allowing supply with the radial taping 4.9±0.2
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2sc1384
Abstract: 2sc1383 transistor 2sc1384 NPN transistor 2sc1384 85170
Contextual Info: 2SC1383/2SC1384 TO-92MOD Transistor NPN 1.EMITTER TO-92MOD 2.COLLECTOR 1 2 3 5.800 6.200 3.BASE 8.400 8.800 Features 0.900 1.100 0.400 0.600 Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA0683 and 2SA0684. 13.800 14.200
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2sc1383/2sc1384o-92mod2sa06832sa0684+52sc13832sc1384transistor 2sc1384npn transistor 2sc138485170
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2SA683
Abstract: 2SC1384 ic 2sc1384 2SA0683 2SA0684 2SA684 2SC1383 2SC1383 2SC1384 PANASONIC TRANSISTOR 2sa684
Contextual Info: Transistor 2SC1383, 2SC1384 Silicon NPN epitaxial planar type Unit: mm 5.9±0.2 4.9±0.2 8.6±0.2 For low-frequency power amplification and driver amplification Complementary to 2SA0683 2SA683 , 2SA0684 (2SA684) 0.7+0.3 –0.2 0.7±0.1 13.5±0.5 • Low collector to emitter saturation voltage VCE(sat)
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2sc13832sc13842sa06832sa683+52sa06842sa684ic 2sc13842sc1383 2sc1384 panasonictransistor 2sa684
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2SC1384
Abstract: 2SC1383 2SC1384 PANASONIC
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1383, 2SC1384 Silicon NPN epitaxial planar type Unit: mm 5.9±0.2 • Features 8.6±0.2 For low-frequency power amplification and driver amplification Complementary to 2SA0683, 2SA0684
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2002/95/ec2sc13832sc13842sa0683+22sa06842sc1383 2sc1384 panasonic
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2SC1384
Abstract: 2SC1383 2SA0683 2SA0684
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92L FEATURES z Low collector to emitter saturation voltage VCE(sat). z Complementary pair with 2SA0683 and 2SA0684. 1.EMITTER 2.COLLECTOR
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transistor 2sa684
Abstract: ic 2sc1384 2SA0683 2SA0684 2SA683 2SA684 2SC1383 2SC1384 NPN transistor 2sc1383 E1808
Contextual Info: Transistor 2SC1383, 2SC1384 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA0683 2SA683 and 2SA0684 (2SA684) Unit: mm 5.9±0.2 4.9±0.2 Low collector to emitter saturation voltage VCE(sat).
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2sc13832sc13842sa06832sa683+62sa06842sa684transistor 2sa684ic 2sc1384npn transistor 2sc1383e1808
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2sc1384
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1384 Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0684 • Package M Di ain sc te on na tin nc ue e/ d Features
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2SC1384
Abstract: 2SA684 2SA0683 2SA0684 2SA683 2SC1383
Contextual Info: Transistor 2SA0683, 2SA0684 2SA683, 2SA684 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1383 and 2SC1384 Unit: mm 5.9±0.2 4.9±0.2 Complementary pair with 2SC1383 and 2SC1384. Allowing supply with the radial taping.
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm 5.9±0.2 • Features 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 • Allowing supply with the radial taping 4.9±0.2
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2SA683
Abstract: 2SA0683 2SA0684 2SA684 2SC1383 2SC1384
Contextual Info: Transistors 2SA0683 2SA683 , 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm 5.9±0.2 • Features 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 • Allowing supply with the radial taping 4.9±0.2 8.6±0.2 For low-frequency power amplification and driver amplification
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2sc1384a
Abstract: ic 2sc1384 2SC1384 2SA0684 2SC1383 SJC00421AED
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1384 Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0684 • Package Low collector-emitter saturation voltage VCE(sat)
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm 5.9±0.2 4.9±0.2 M Di ain sc te on na tin nc ue e/ d 8.6±0.2 For low-frequency power amplification and driver amplification
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2SC1384
Abstract: ic 2sc1384 2SA0683 2SA0684 2SC1383 2SC1383 2SC1384 PANASONIC
Contextual Info: Transistors 2SC1383, 2SC1384 Silicon NPN epitaxial planar type Unit: mm 5.9±0.2 • Features 8.6±0.2 For low-frequency power amplification and driver amplification Complementary to 2SA0683, 2SA0684 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 • Low collector-emitter saturation voltage VCE sat
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ft 103
Abstract: Vbe 8 V ic 2sc1384 2SA0683 2SA0684 2SC1383 2SC1384
Contextual Info: Transistors 2SC1383, 2SC1384 Silicon NPN epitaxial planar type Unit: mm 5.9±0.2 M Di ain sc te on na tin nc ue e/ d • Features 8.6±0.2 For low-frequency power amplification and driver amplification Complementary to 2SA0683, 2SA0684 4.9±0.2 13.5±0.5 0.7+0.3
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2SA0683
Abstract: 2SA0684 2SA683 2SA684 2SC1383 2SC1384
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm 5.9±0.2 4.9±0.2 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 • Allowing supply with the radial taping • Absolute Maximum Ratings Ta = 25°C
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2sc1384
Abstract: transistor 2sc1384 NPN transistor 2sc1383 2SC1383 transistor 2sc1383 transistor 7800 TO-92L to92l 85170 2SA0683
Contextual Info: 2SC1383/2SC1384 TO-92L Transistor NPN TO-92L 1.EMITTER 4.700 5.100 2.COLLECTOR 7.800 8.200 3.BASE 1 Features 2 3 0.600 0.800 0.350 0.550 Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA0683 and 2SA0684. 13.800 14.200
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2sc1383/2sc1384o-92l2sa06832sa0684+92sc13832sc1384transistor 2sc1384npn transistor 2sc13832sc1383 transistortransistor 7800to-92lto92l85170
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2SA0683
Abstract: 2SC1384 2SA0684 2SA683 2SA684 2SC1383 2SA684 S
Contextual Info: Transistor 2SA0683, 2SA0684 2SA683, 2SA684 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1383 and 2SC1384 Unit: mm 5.9±0.2 4.9±0.2 Complementary pair with 2SC1383 and 2SC1384. Allowing supply with the radial taping.
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2SA06
Abstract: 2SA60 Silicon PNP epitaxial planar type For low-frequency 2SA0683 2SA0684 2SA683 2SA684 2SC1383 2SC1384
Contextual Info: Transistors 2SA0683, 2SA0684 2SA683, 2SA684 Silicon PNP epitaxial planar type Unit: mm 5.9±0.2 • Features 8.6±0.2 For low-frequency power amplification and driver amplification Complementary to 2SC1383, 2SC1384 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 • Complementary pair with 2SC1383 and 2SC1384
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibilixp08081xp08546xp0a554xp0d873+13xp0d874xp0d875xp0e5542sc5929mn1280transistor 2sc59293sk1293sk972sc59282pg0092sc5929 equivalent2sk40002sd965 transistor replacement guide
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K 2411
Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type
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3sk241t0220fk 2411k2411+8ix 3354a699a3sk24112sa1950t092l2sb07743sk271c 5019
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2SB0774
Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)
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o-1262sc22582sc30632sc5340+10o-202t0-220o-220f2sc29232sc47142sc39422sb07742sa20042sb1602sb642
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