BC456C Search Results

Contextual Info: BC456C Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.800 h(FE) Max. Current gain.

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

8c415

Abstract: TBC558B 2NL4957 bc456b LOW-POWER SILICON PNP BC456C BF739 bf414 Motorola TO92 BF96
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V{BR CEO - 5 10 BC321B BC559P MPS6535 MPS6535M 2SA1031 8C859 BC859 BC859 S1806 S1806 ~~g~~;~ 15 -20 BC455A BC456A BC559BP BC455B BC456B TBC558B T8C559B TBC558 f~g~~~ 25 30 - 35 40 45 50 55 60 65 70 75 80 85

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP