2SA163 Search Results

2SA1634

Abstract: 2SC4007 DC-DC converter 5V 1A
Contextual Info: JMnic Product Specification 2SA1634 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC4007 ・Low collector saturation voltage APPLICATIONS ・For medium speed,electrical supply and DC-DC converter applications PINNING

2SC4007

Abstract: 2SA1634
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1634 Silicon PNP Power Transistors DESCRIPTION • With T 0 2 2 0 package • Complement to type 2SC4007 • Low collector saturation voltage APPLICATIONS • For medium speed .electrical supply * and DC-DC converter applications

2SA1633

Abstract: 2SC4278 tc25r
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1633 S ilicon PNP Power Transistors DESCRIPTION • With TO-247 package • Complement to type 2SC4278 • High current and high power capability APPLICATIONS • For audio output applications PINNING PIN 1 DESCRIPTION

2SA1635

Abstract: 2SC4008 SC-75A
Contextual Info: 2SA1635 2SC4008 Transistors Power Transistor —80V, —4A I 2SA1635 •F e a tu re s #A bsolute maximum ratings ( T a = 2 5 t ) 1 ) Low VcE(sai). (Typ. — 0 . 3 V at Ic / I b = — 2 /—0.2A) 2 ) Excellent DC current gain characteristics. 3 ) Pc = 3 0 W ( T c = 2 5 ‘C )

2SA1633

Abstract: 2SC4278
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1633 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·High Power Dissipation ·High Current Capacity ·Complement to Type 2SC4278 APPLICATIONS ·For audio and general purpose applications

SA1673

Abstract: 2SA1623 2SC4387 2sa161 2SA1616 2SA1670 2SA1671 2SA1615 2SA1615-Z 2SA1617
Contextual Info: - 44 - Ta=25U*Ep(ÏTc=25<C m 2SA1615 2SA1615-Z 2SA1616 2SA1617 2SA1618 2SA1619 2SA1619A 2SA1620 2SA1621 2SA1622 2SA1623 2SA1624 2SA1625 2SA1626 2SA1627 2SA1630 2SA1633 2SA1634 2SA1635 2SA1641 2SA1643 2SA1653 2SA1654 2SA1655 2SA1656 2SA1666 2SA1667 2SA1668

Contextual Info: ROHM CO LTD 40E TÔEÛTTT D 00054b? h 7 > y ^ $ / I ransistors 2SA1634 S Ü 1 @ 34 2 S E1RHM 7 ^ S 3 -J 9 2 L \ d $ * y 7 J \ s 7 ° \ s -j-m P N P y lJ = l > h 7 > v ^ ^ • m SÜ-^lVtVvJlT Epitaxial Planar P N P Silicon Transistor \t'i£l2i/'Dimensk>ns Unit: mm

2SC4008

Abstract: 90-173-B97
Contextual Info: Transistors 2SA1635 2SC4008 90-173-B97 (94L-646-D97) 289

2SA series

Contextual Info: Bipolar transistors-2SA series TO-247 summary Table 9 TO-247 general use transistors Application Audio output V CEO Ir V 2SA1633 2SC4278 Part no. (A) Pr (W) Tc = 25°C h FE -150 -10 100 150 10 100 hFE •c ranking code VCE (V) (A) 60 - 320 D EF -5 -1 60 - 320

2SA1635

Abstract: 2SC4008
Contextual Info: JMnic Product Specification 2SA1635 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Complement to type 2SC4008 APPLICATIONS ・For medium speed,electrical supply and DC-DC converter applications

2SA1635

Abstract: 2sa163 2SC4008
Contextual Info: Inchange Semiconductor Product Specification 2SA1635 Silicon PNP Power Transistors • DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Complement to type 2SC4008 APPLICATIONS ·For medium speed,electrical supply and DC-DC converter applications

2SC4007

Abstract: 2SA1634
Contextual Info: SavantIC Semiconductor Product Specification 2SA1634 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC4007 ·Low collector saturation voltage APPLICATIONS ·For medium speed,electrical supply and DC-DC converter applications

2SB596

Abstract: 2SB686 2SB824 2sb773 2SB773A 2SA1232 2SB 773 2SB965 2SA1283 773a
Contextual Info: - 52 - m % £ Type No. Manuf. = i# SANYO jpr ^ TOSHIBA S H NEC B ÍL HITACHI * ± a FUJITSU fâ T MATSUSHITA = m MITSUBISHI a — A ROHM 2SB 762 . «1 T 2SB596 2SB703 2SB859 2SB942 2SB1334 2SB 762A fé T 2SB596 2SB703 2SB859 2SB942A 2SA1634 2SB 762B fé T

2sa1635

Abstract: T0220FB
Contextual Info: h ~7 > v 7, £ /Transistors 2SA1635 2SA1635 i h PNP v V = i > t 7 > y ^ ^ Epitaxial Planar PNP Silicon Transistor • • W f i r liiH /D im e n s io n s Unit: mm « a 1) VcE(sat) 4.5 ’ V cE (sa t)= —0.3V (T yp .) »1 Ic / I b = - 2 A / - 0 . 2 A | 7.0

2SC4278

Abstract: TO-247 NPN SILICON POWER TRANSISTORS 2Sa1633 TO247 package dissipation
Contextual Info: SavantIC Semiconductor Product Specification 2SC4278 Silicon NPN Power Transistors DESCRIPTION •With TO-247 package ·Complement to type 2SA1633 ·High current and high power capability APPLICATIONS ·For audio output applications PINNING PIN DESCRIPTION

2SA1634

Abstract: 2SC4007 2sa163 2SC40
Contextual Info: Inchange Semiconductor Product Specification 2SA1634 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC4007 ·Low collector saturation voltage APPLICATIONS ·For medium speed,electrical supply and DC-DC converter applications

2SA1633

Abstract: 2SC4278 TO-247 NPN SILICON POWER TRANSISTORS
Contextual Info: Power Transistors www.jmnic.com 2SC4278 Silicon NPN Transistors B C E Features With TO-247 package Complement to type 2SA1633 Absolute Maximum Ratings Tc=25 SYMBOL RATING UNIT VCBO Collector to base voltage PARAMETER 150 V VCEO Collector to emitter voltage

2sa1633

Abstract: 2SA POWER TRANSISTORS 2SA transistor fe2c
Contextual Info: 2SA1633 Transistor, PNP Features Dimensions Units : mm • available in TO-247 package • high breakdown voltage, B V ^^ q ——150 V • low collector saturation voltage, typically VCE(sat) = -0.4 V at lc/ lB = -7 A/-0.7 A • large collector power dissipation

2sa1630

Contextual Info: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SA1630 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1630 is a resin sealed silicon PNP epitaxial type transistor OUTLINE DRAWING Uni> designed for low frequency voltage amplify application.

2SC400

Contextual Info: h ~7 > v 7, $ / I ransistors 2SA1635 2SA1635 U - ^ P N P y ' J : i > h ? > y Z $ Epitaxial Planar PNP Silicon Transistor ‘f£Ji>J&112j*£lf iffl/L o w Freq. Power Amp. • • ^.ffi-> -;£[2|/D im ensions Unit: mm) 1) V c E ( s a t ) ^ ^ ' o VCE (sa t)= — 0 3V (Typ.)

2SA1633

Abstract: TO247 package dissipation 2SC4278
Contextual Info: JMnic Product Specification 2SA1633 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-247 package ・Complement to type 2SC4278 ・High current and high power capability APPLICATIONS ・For audio output applications PINNING PIN DESCRIPTION 1 Base 2

Nec K 872

Abstract: 2SA1184 2SB1306 2SB1479 2SA1015 2SB873 2SB1086 2SB548 2SB1480 2sb601
Contextual Info: 55 - s « T y p e No. tt € Manuf. m = SANYO JÎÏ TOSHIBA m a NEC ÍL S HITACHI Ä ± àfi F U JITSU fâ T MATSUS H I T A ^ ü MITSUB I S H I □ — A ROHM 2 SB S58 ÎL 2SB824 2SB596 2SB703 2SB942 2SB1334 2SB 859 îl 2SB920 2SB595 2SB703A 2SB942A 2SA1634

2SC4008

Contextual Info: 2SA1635 2SC4008 Transistors I Power Transistor 80V, — 4A 2SA1635 • F e a tu r e s • A b so lu te maximum ratings ( T a = 2 5 t ) 1 ) Low VcE(sat>. (Typ. —0.3V ;at lc/la=«=—2 /—0.2A ) Param eter C ollecto r-base voltage Coilector-em itter voltage

2SA1634

Abstract: 2SC4007 D602
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1634 DESCRIPTION •Low Collector Saturation Voltage : VCE sat = -1.5V(Max)@ IC= -2A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V (Min) ·Wide Area of Safe Operation