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Contextual Info: 2N3792 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL BASE POWER TANSISTORS 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060) 11.43 (0.450) 6.35 (0.250)
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2N3792
Abstract: tansistors TANSISTOR
Contextual Info: 2N3792 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL BASE POWER TANSISTORS 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060) 11.43 (0.450) 6.35 (0.250)
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Contextual Info: 2N3792 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL BASE POWER TANSISTORS 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060) 11.43 (0.450) 6.35 (0.250)
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NP80N055MHE
Abstract: 80N055 NP80N055MHE-S18-AY NP80N055NHE NP80N055NHE-S18-AY
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP80N055MHE,NP80N055NHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Tansistors designed for high current switching applications. ORDERING INFORMATION
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np80n055mhenp80n055nhenp80n055mhe-s18-ayo-220+5mp-25knp80n055nhe-s18-ayo-262mp-25sk80n055
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Contextual Info: 2N3792 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL BASE POWER TANSISTORS 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060) 11.43 (0.450) 6.35 (0.250)
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2n3792 |
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T 402 transistor
Abstract: 702 TRANSISTOR npn transistor+1906 pnp 8 transistor array
Contextual Info: m ic ro e le c tro n ic s group Data Sheet May 1996 Lucent Technologies Bell Labs Innovations ALA401/402 Semicustom Linear Array Features Description • High-speed CBIC process: 250 MHz NPN and PNP The ALA401/402 Semicustom Linear Arrays are inte grated circuits consisting of vertical NPN and PNP
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ala401/402pr352a21pr352a2nr151a01+6nr151005002bt 402 transistor702 transistor npntransistor+1906pnp 8 transistor array
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UA 758 pc
Abstract: LT 758
Contextual Info: K7 > y DTC363TK $ /Transistors DTC363TK ry iu H ' 7 >->'*? JSRrtKh 5 >->';* Digital Transistors (Includes Resistors) 0. —T- 'f >^ 7 , b ' 7 > v Z . ' f y ^-/Muting, Transistor Switch • ^ ffi^ is H / D im e n s io n s (Unit : mm) 1) V c e (sat) 5 i - t <
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dtc363tk600maua 758 pclt 758 |
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XH035
Abstract: mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3
Contextual Info: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target
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xh03535-micronmos rm3 datanmos transistor 0.35 um+7mos rm3x-fab" core cell librarybsim3v3jfet wn 428phvcpolysilicon resistorbsim3
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bjt oscillator
Abstract: westinghouse oscillator clapp oscillator BJT phase shift oscillator
Contextual Info: VOLTAGE CONTROLLED OSCILLATORS Introduction In simple terms, an oscillator is an amplifier where sufficient energy is coupled back from the output to the input to become unstable and start oscillating. The output port then provides the wanted output power into the load and the overall circuit
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bjt oscillatorwestinghouse oscillatorclapp oscillatorbjt phase shift oscillator |
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Voltage Controlled Oscillators
Abstract: SAW Oscillators clapp oscillator bjt oscillator BJT phase shift oscillator rohde tuner rohde BB141 noise diode generator power bjt advantages and disadvantages
Contextual Info: VOLTAGE CONTROLLED OSCILLATORS INTRODUCTION The steady-state loop equations are In simple terms, an oscillator is an amplifier where sufficient energy is coupled back from the output to the input to become unstable and start oscillating. The output port then provides the wanted output
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voltage controlled oscillatorssaw oscillatorsclapp oscillatorbjt oscillator+6bjt phase shift oscillatorrohde tunerrohdebb141noise diode generatorpower bjt advantages and disadvantages
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Contextual Info: Motor Esnoge CocuOs rom SIEMENS The first product which can claim to meet this objec tive is the universal driver TLE 5208-6G. This device contains 6 HS and 6 LS switches, which can be used as desired for lamps, for relays, or for motor control in half- and full-bridge applications.
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so-28 |
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2SA1776
Abstract: 2SB1242 2SB1460 2SB1485 2SD1225M pin 29c40 2sa154 2SB1240 2sb148 2SA1547
Contextual Info: Transistors <Pin Inserting Types> ROHM CO LTD SbE D • 0007031» 0^4 ■ RHM ■ATR • ATV Almost the same size as TO-92 but 1W Pc package type. Taped type for automated placement; or bulk specification. Package Application ATR VbED V *VcES *VCER ATV Type
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g0070312sa937mln2sc2021mln2sa937m+152sa15472sc202m2sc40102sc4776m2sc47782sa874m2sa17762sb12422sb14602sb14852sd1225m pin29c402sa1542sb12402sb148
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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tda1510tda1510alogos 4012b1lb553+8rauland ets-003silec semiconductorsmcp 78334057atransistor sr5274c9121tk55274s485
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