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    Omega Engineering OM-CP-RFPULSE2000A

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    PULSE20 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC5124

    Contextual Info: 2SC5124 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor 6 V IC 10(Pulse20) A IB 5 A PC 100(Tc=25°C) W Tj 150 °C –55 to +150 °C Tstg V V MHz pF 0.8±0.2 1.75 1.05 +0.2 -0.1 1.5 IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A)


    Original     		2sc5124pulse20100ma PDF

    2SC3831

    Abstract: vbe 12v, vce 600v NPN Transistor transistor npn 12V 1A Collector Current
    Contextual Info: 2SC3831 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor VCB=600V VCEO 500 V IEBO VEB=10V 10 V V(BR)CEO 10(Pulse20) A hFE mA 100max µA IC=25mA 500min V VCE=4V, IC=5A 10 to 30 IB 4 A VCE(sat) IC=5A, IB=1A 0.5max


    Original     		2sc3831pulse20100max500min+4105typmt-100vbe 12v, vce 600v npn transistortransistor npn 12v 1a collector current PDF

    2SC4138

    Abstract: 2sc4138 NPN Transistor
    Contextual Info: 2SC4138 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 10(Pulse20) A hFE VCE=4V, IC=6A 10 to 30 IC=6A, IB=1.2A 0.5max 4 A VCE(sat) PC 80(Tc=25°C)


    Original     		2sc4138100max400minpulse20+410typ85typmt-1002sc4138 npn transistor PDF

    2SC4557

    Contextual Info: 2SC4557 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO V 10(Pulse20) A hFE V 5 A VCE(sat) IC=5A, IB=1A 0.5max PC 80(Tc=25°C) W VBE(sat) IC=5A, IB=1A


    Original     		2sc4557100maxpulse20550min+3105typ50eristicsfm100 PDF

    2SC4138

    Contextual Info: 2SC4138 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Unit ICBO VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 10(Pulse20) A hFE VCE=4V, IC=6A 10 to 30 4 A VCE(sat) IC=6A, IB=1.2A


    Original     		2sc4138mt-100100max400min+3pulse2010typ85typ PDF

    vbe 12v, vce 600v NPN Transistor

    Abstract: 2SC3831
    Contextual Info: 2SC3831 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor 1max mA VCEO 500 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 500min V 10(Pulse20) A hFE VCE=4V, IC=5A 10 to 30 IB 4 A VCE(sat) IC=5A, IB=1A 0.5max


    Original     		2sc3831pulse20100max500min+3105typmt-100vbe 12v, vce 600v npn transistor PDF

    2SC4557

    Contextual Info: 2SC4557 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 10(Pulse20) A hFE VCE=4V, IC=5A 10 to 28 A VCE(sat) IC=5A, IB=1A 0.5max 80(Tc=25°C)


    Original     		2sc4557100max550minpulse20+2105typfm100 PDF

    2SC5124

    Contextual Info: 2SC5124 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor 6 V IC 10(Pulse20) A IB 5 A PC 100(Tc=25°C) W Tj 150 °C –55 to +150 °C Tstg V V MHz pF 0.8±0.2 1.75 1.05 +0.2 -0.1 1.5 IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A)


    Original     		2sc5124pulse20100ma PDF

    2SC4296

    Contextual Info: 2SC4296 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=6A 10 to 30 23.0±0.3 100max IC=25mA IB 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max


    Original     		2sc4296pulse20400min10typ+385typ100maxfm100 PDF

    d2494

    Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
    Contextual Info: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in


    Original     		n6to44672sd211to2142sc44682sc1828+162sc38322sa768to7692sa12622sa770to7712sa17252sa957to958d2494c4381b1625 equivalent transistora1668 transistora1695 power transistord2495c3852ad1796 power transistorc5287d2493 PDF

    6v 511 spdt relay

    Abstract: 12v DC johnson motor 270 VDC CIRCUIT BREAKER series 511 spdt relay 12v dc
    Contextual Info: C-Series Circuit Breaker The C-Series hydraulic/magnetic circuit breakers are ideal for applications that require higher amperage and voltage handling capability in a smaller package. They are available in 1-6 poles, 0.02-100amps, UL Recognized up to 480VAC or 150VDC, UL489 Listed up to 240VAC or 125VDC,


    Original     		02-100amps480vac150vdcul489+6240vac125vdc6v 511 spdt relay12v dc johnson motor270 vdc circuit breakerseries 511 spdt relay 12v dc PDF

    c5287 equivalent transistor

    Abstract: transistor d2495 c4131 TRANSISTOR REPLACEMENT GUIDE B1560 equivalent Sanken Power Transistors C3679 equivalent shinetsu G746 C3834 transistor c4468 power transistor equivalent 2SC3854 equivalent
    Contextual Info: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in


    Original     		2sa16932sa16942sa16952sa1725+162sa19072sa19082sa19092sc31792sc38522sc4511c5287 equivalent transistortransistor d2495c4131 transistor replacement guideb1560 equivalentsanken power transistorsc3679 equivalentshinetsu g746c3834 transistorc4468 power transistor equivalent2sc3854 equivalent PDF

    2SC4296

    Contextual Info: 2SC4296 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=6A 10 to 30 23.0±0.3 100max IC=25mA IB 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max


    Original     		2sc4296pulse20400min10typ+385typ100maxfm100 PDF

    C3679 equivalent

    Abstract: transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220
    Contextual Info: POWER TRANSISTORS SANKEN ELECTRIC CO.,LTD. Bulletin No T01EE0 July,2001 C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies.


    Original     		t01ee0h1-t01ee0-0107020sbc3679 equivalenttransistor c3835+8a1695 power transistorsk c4020b1686sk c4467c4381sk c5071transistor c3856 npnc4020 to220 PDF

    laser diode DVD 300mw

    Abstract: MF-2500FXC 785nm mitsubishi mitsubishi ic. 5201 DVD LENS circuit diagrams 1550nm Laser Diode butterfly laser diode DVD 100mw D4030 FU-423SLD laser diode for optical communication
    Contextual Info: OPTICAL DEVICES Features Great Variety of Product Line-up Wavelength: 650 nm to 1600 nm Product form: TO-CAN, Chip-on-Carrier, Module High Speed, High Power, High Performance Bitrate to 40 Gbps High Power to 300 mW Application Map 1 Technology Trend 3 Laser Diode for Information


    Original     		h-cp606-elaser diode dvd 300mwmf-2500fxc785nm mitsubishi+7mitsubishi ic. 5201dvd lens circuit diagrams1550nm laser diode butterflylaser diode dvd 100mwd4030fu-423sldlaser diode for optical communication PDF