2SA135 Search Results

C3419

Abstract: 2SC3419 2SA1356
Contextual Info: 2SC3419 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3419 ○ 中電力増幅用 • 単位: mm : VCE (sat) = 0.25 V (標準) 飽和電圧が低い。 • コレクタ損失が大きい。: PC = 1.2 W (Ta = 25°C) • 2SA1356 とコンプリメンタリになります。

C3422

Abstract: 2SC3422 2SA1359
Contextual Info: 2SC3422 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3422 ○ 電力増幅用 ○ 低速度スイッチング用 単位: mm • hFE リニアリティが良好です。 • 2SA1359 とコンプリメンタリになります。

D4060

Abstract: 2SA1359
Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1359 AUDIO FREQUENCY POWER AMPLIFIER. Unit in m m LOW SPEED SWITCHING. E3MAX. 2f5i±ai FEATURES: . Suitable for Output Stage of 5 Watts Car Radio and •ÏÏ- Car Stereo. . G o o d Line a r i t y of hpg. 1.0 MAX. . Complementary to 2SC3422.

2SA1015

Abstract: 2SB1041 2SA935 2SA934 2SA854 2SA933 2SA1358 2SA1096 2SA1309A 2SA1339
Contextual Info: - Si € Type No. tt Í5 Manuf. n H SANYO M S TOSHIBA i NEC B ÎL HITACHI M ± FUJITSU il fâ T MATSUSHITA h m MITSUBISHI P — A ROHM * 2SA 5 1 2 —" It £ 2SA1358 2SA1096 2SB1086 * 2 SA 513 ^ JK 2SAÌ358 2SA1096 2SA934 * 2SA 516 ^ 2SA1096 2SB1086 * 2SA 516A

2SB737

Abstract: 2SA1015 2SA978 2SA933 2sa1306 2SA933 R 2SA970 2SA1127 2SA1142 2SA929
Contextual Info: - m % tt 2S A 973 « M a n u f. T y p e No. J SANYO tö T 2S A 9 7 7 tö T 2SA1209 2S A 9 7 7 A fé T 2SA1352 = » _ * 2S A 978 2 SA 979 X TOSHIBA NEC 2S A988 2SA1030 2SA1142 2SB648 ± FUJITSU a T & M ATSUSHITA H £ M ITSU BISHI □ — A RO HM 2SA933 2SA1127

A1359

Abstract: SA1359 2SA1359 2SC3422
Contextual Info: 2SA1359 TO SH IBA 2 SA 1359 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS AUDIO FREQUENCY POWER AMPLIFIER. LOW SPEED SWITCHING. • • • Suitable for Output Stage of 5 Watts Car Radio and Car Cotereu. l _ liood Linearity of hjpg. Complementary to 2SC3422.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors TO- 126C 2SC3421 TRANSISTOR NPN 1. BASE FEATURES z Complementary to 2SA1358 z Suitable for Driver of 60 to 80 Watts Audio Amplifier z High Breakdown Voltage 2. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SA1357 TRANSISTOR PNP TO-126C FEATURES Power dissipation PCM : 1.5 W (Tamb=25℃) 1. EMITTER Collector current ICM : -5 A Collector-base voltage V(BR)CBO : -35 V

2SA1356

Abstract: 2SC3419 2sc341 2SA135
Contextual Info: 2SA1356 TO SH IBA 2 S A 1 356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • Low Saturation Voltage : VcE(sat) = -0.32V (Typ.) (IC = - 500mA, IB = -50m A ) High Collector Power Dissipation : P 0 = 1.2W(Ta = 25°C)

A1357 transistor

Abstract: a1357 2SA1357
Contextual Info: 2SA1357 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1357 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) • hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.0 V (max)

2sa1359

Abstract: 2sa135 2SC3422
Contextual Info: Inchange Semiconductor Product Specification 2SA1359 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC3422 ·Good linearity of hFE APPLICATIONS ·Audio frequency amplifier ·Low speed switching ·Suitable for output stage of 5W car

2SA1359

Abstract: 2SC3422
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1359 Silicon PNP P o w er Transistors DESCRIPTION • W ith TO-126 package • Complement to type 2SC3422 • Good linearity o f hFE APPLICATIONS • Audio frequency amplifier • Low speed switching • Suitable for output stage of 5W ca r

A1356 transistor

Abstract: A1356 2SA1356 2SC3419
Contextual Info: TOSHIBA 2SA1356 2 S A 1 356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS. • 8.3MAX. . 5.8 Low Saturation Voltage : VcE(sat) = -0.32V (Typ.) (IC = - 500mA, IB =-50m A ) High Collector Power Dissipation : P0 = 1.2W(Ta = 25°C)

2SA1357

Abstract: A1357
Contextual Info: 2SA1357 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1357 ○ ストロボフラッシュ ○ 中電力増幅用 単位: mm • hFE = 100~320 (VCE = −2 V, IC = −0.5 A) • hFE = 70 (最小) (VCE = −2 V, IC = −4 A)

2SA1355

Contextual Info: JMnic Product Specification 2SA1355 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage. ・Short switching time. APPLICATIONS ・Various inductance lamp drivers for electrical equipment. ・Inverters, converters

2SC3422

Contextual Info: 2SC3422 SILICON NPN EPITAXIAL TYPE PCT PROCESS AUDIO FREQUENCY POWER AMPLIFIER. Unit in mm LOW SPEED SWITCHING. FEAT U R E S : . Suitable for Output Stage of 5 Watts Car Radio and Car Stereo. . Good Linerity of hpE. Complementary to 2SA1359. MAXIMUM RATINGS (Ta=25°C)

2sa1358

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1358 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: 03.1 ¿Oil . Complementary to 2SC3421 . Suitable for Driver of 60 to 80 Watts. 3- . High Breakdown Voltage. 1.0MAX. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC

LED display module

Abstract: pj496 j496
Contextual Info: MULTI CHIP BIPOLAR DIGITAL INTEGRATED CIRCUIT TD62M8601F 8CH LOW SATURATION VOLTAGE SOURCE DRIVER TD62M 8601F is Multi Chip IC incorporates 8 low saturation discrete 2SA1357 transistors. This IC is suitable for a battery use motor drive and LED display module applications.

2SC3421

Abstract: 2SA1358 B1030 AX1030
Contextual Info: 2SC3421 TO SHIBA 2SC3421 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. • • • 53.1 ±0.1 Complementary to 2SA1358 Suitable for Driver of 60 to 80 Watts Audio Amplifier High Breakdown Voltage

2SA1358

Abstract: 2SC3421
Contextual Info: 2SC3421 TO SH IBA 2SC3421 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. • • • 43.1 ±0.1 Complementary to 2SA1358 Suitable for Driver of 60 to 80 Watts Audio Amplifier High Breakdown Voltage

Contextual Info: , [inc. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212) 227-6005 FAX: (973) 376-8960 2SA1352 Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown VoltageV(BR)CEo= -200V (Min) • Complement to Type 2SC3416

a1359

Abstract: 2tj transistor 2SA1359 2SC3422 cd 3301
Contextual Info: TOSHIBA 2SA1359 2 S A 1 359 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER. LO W SPEED SWITCHING. • 8.3 MAX. • • 0 z.i± o .i 5.8 Suitable for Output Stage of 5 Watts Car Radio and Car Stereo.

Contextual Info: T O SH IB A TD62M4601F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M4601 F 4CH LOW SATURATION VOLTAGE SOURCE DRIVER TD62M4601F is Multi Chip IC incorporates 4 low saturation discrete 2SA1357 transistors. This IC is suitable for a battery use motor drive and LED

2SA1357

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1357 DESCRIPTION •High Collector Current-IC= -5.0A ·DC Current Gain: hFE= 70 Min @IC= -4A ·Low Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -4A APPLICATIONS ·Strobe flash applications.