2SB1019 Search Results

2SB1019

Abstract: 2SD1412
Contextual Info: JMnic Product Specification 2SB1019 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1412 APPLICATIONS ・High current switching applications ・Power amplifier applications PINNING PIN DESCRIPTION

ic 353

Abstract: IC353
Contextual Info: 2SB1019 SILICON PNP EPITAXIAL PLANAR TYPE INDUSTRIAL APPLICATIONS U nit in mm HIGH C U R R E N T SW ITC H IN G A PPLICA TIO N S. P O W E R AMPLIFIER A PP LIC A TIO N S. • • ? Low Collector Saturation Voltage : v CE sat = -0.4V (Max.) at Ic = -4 A Complementary to 2SD1412

Contextual Info: 2SD1412 SILICON NPN TRIPLE DIFFUSED TYP E INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 10.3 MAX. POWER AMPLIFIER APPLICATIONS. 03.2±O. 2 FEATURES: . Low Saturation Voltage : VcE sat =0-4V(Max.) U s at Ic=4A . Complementary to 2SB1019

2SB1019

Abstract: 2SD1412
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1019 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.4V(Max)@IC= -4A ·Good Linearity of hFE ·Complement to Type 2SD1412 APPLICATIONS ·High current switching applications.

2SB1019

Abstract: 2SD1412
Contextual Info: SavantIC Semiconductor Product Specification 2SB1019 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1412 APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING

2SB1019

Abstract: 2sb101 2SD1412
Contextual Info: Inchange Semiconductor Product Specification 2SB1019 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1412 APPLICATIONS ・High current switching applications ・Power amplifier applications

g3je

Abstract: 2SB1019
Contextual Info: y 'j 3 >PNP=M fôf$ pcTM o -f 7f 2SB1019 ym > if I - o P ? v m títfjíh 3 3 : IC = - 7 A ? lä io a i± ^ 'ig ;^ 0 : VcE(sat) = - 0 .4 V ( f t *) ( I C = -4A ) 2SD1412 t 3 > 7 " 'J ^ > ? >; (; 4- 19 £ - f 0 ft*Æ :fê (T a = 25°C) Il 3 L' 5 3 •^ - X Psi m a

2SB1019

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1019 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1Q.3MAX, POWER AMPLIFIER APPLICATIONS. FEATURES: . Low Collector Saturation Voltage : VCE sat =-0.4V(Max.) at I c =-4A . Complementary to 2SD1412

2SD1412

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1412 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1Q3MAX. POWER AMPLIFIER APPLICATIONS. 03.2±Q2 FEATURES: . Low Saturation Voltage : VcE sat = 0 •4 V ( M a x .) at Ic=4A . Complementary to 2SB1019

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SB816

Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
Contextual Info: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3

2SA1598

Abstract: 2SA1622 2sa1612 2SA1586 2SA1763 2SB1220A 2sa1578 2SA1611 2sa162 bc 1602 l
Contextual Info: 35 - m « Type No. a « Manuf. SANYO 2SA 1575 2SA 1576 □—A 2SA 1577 / 2SA 1579 □—A □—A □ —A 2SA 1584 □—A 2SA1784 □- A ¿ Ò D V ù Q 2SA 1578 ¿o n HOC nuu 2SA 1586 . 2SA 1587 , $ 2SA 1588 K 2 2SA 1589 h m 2SA 1590 E ft 2SA 1591 , E ft

2SB553Y

Abstract: IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type •c Max A V(BR)CEO on fT *ON r hFE 'CBO Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) PD (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15

2SD1412

Abstract: 2SB1019 nhjt
Contextual Info: TOSHIBA { D I S C R E T E / O P T 0> 9097250 TOSHIBA ~SÍ 56C { D ISCRETE/O PTO DE I ^ O T T E S O DOCmSM 07954 2SD1412 SILICON NPN TRIPLE DIFFUSEDTYPE Unit in tnm HIGH CURRENT SWITCHING APPLICATIONS.' POWER AMPLIFIER APPLICATIONS. FEATURES: IQ 3H A X .

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

2SD1383K

Abstract: 2SD1402 2SD1407 2SD1416 2SD1390 2SD1376K 2SD1377K 2SD1378 2SD1379 2SD1380
Contextual Info: - 246 - Ta=25cC, *Ep(äTc=25‘C TJ 2SD1376K 2SD1377K 2SD1378 2SD1379 0Ä 2SD13S0 Cf — 2SD1381 2SD1382 2SD1383K 2SD1384 2SD1385 2SD139Q 2SD1391 2SD1392 2SD1394 2SD1395 2SD1396 2SD1397 2SD1398 2SD1399 □— A BÄ D— A n— A □— A O— A D — töT

2SA1441

Abstract: 2sA1441 nec 2SA1115 2SA1263 2SA1232 2SA1142 2SA1310 2SA1018 2SA1624 2SB1197K
Contextual Info: 32 - tt 2 SA 1465 0 a 2SA 1466 B 2SA 1467 i ED M £ T y p e No. m 146 8 € Manuf. H » S ANYO 2SB698 2SA 2 SA 2SA 1471 1 474 1 47 5 1 47 6 = •;# ^ ^ = n ^ = # ft 2SA 1477 = 3 2SA 1478 = ;¥ H. ft 2SA 1479 2SA 1480 - ✓ J 2SA 1481 2SA 1482 2SA 1485 2 SA 1487

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

j2y transistor

Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,

Contextual Info: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIB A Sb 56C D ISC R ETE/O P TO SILICON NPN TRIPLE DIFFUSED TYPE DE 1 ^ 0^7550 Q D 0 7 ‘iS4 ü 79 54 D T - B Z - Û 9 _ 2 S 1 D 4 1 2 Unit in mra HIGH CURRENT SWITCHING APPLICATIONS.' 1Q 3M AX . POWER AMPLIFIER APPLICATIONS.

2SB1099

Abstract: 1115a 2sB1098 NEC 2SA1441 2SB873 1116a 2SB927 2SA1770 2SA1283 nec 2SB1099
Contextual Info: - « Type No. tt « Mamif. 2SB 1114 -• 2SB 1115 „ Hi TOSHIBA Z £ MITSUBISHI ZSA1213 2SB10Q1 2SB956 2SB1188 2SB1122 2SA12Q1 2SB1002 2SB766A 2SB1260 2SA1213 2SB1Q02 2SB766A 2SA1315 2SB1059 2SB621A 2SA1283 2SB1459 2SB621A 2SA1283 S S « 2SB 1117 ^ S « 2SB 1118