D1658 Search Results

transistor D1658

Abstract: d1658 2SD1658
Contextual Info: D1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor D1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

D1650

Abstract: D16559 DSPG dect D16000 D16529 DSPG DSPG 56 D16521 D16551 DECT/DSP GROUP
Contextual Info: D16000 System-On-Chip Family Product Description Primary Applications • Feature Phones • Digital Answering Functions for Corded or Cordless Phones • Stand-Alone Digital Answering Devices • Portable Digital Voice Recorders • Automotive Applications

d1658

Contextual Info: Pomona Model 1658 Cable Assembly Type “N” Male Both Ends Cable Types Model Capacitance pf/ft Nominal Impedance Cable Diameter RG213/U 1658-S-XX 30.8 50 Ø .405 RG214/U Double Shield 1658-T-XX 30.8 50 Ø .425 MATERIALS: Conn:1st end – Type “N” Male, See table above.

d1658

Abstract: transistor D1658
Contextual Info: D1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor D1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

d1658

Abstract: 2SD1658
Contextual Info: D1658 シリコンNPNエピタキシャル形 ダーリントン接続 東芝トランジスタ D1658 ○ マイクロモータドライブハンマドライブ用 ○ スイッチング用 ○ 電力増幅用 • 単位: mm 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)

d1658

Abstract: rg214 datasheet RG213 cable RG213 cable impedance
Contextual Info: Pomona Model 1658 Cable Assembly Type “N” Male Both Ends Cable Types Model Capacitance pf/ft Nominal Impedance Cable Diameter RG213/U 1658-S-XX 30.8 50 Ø .405 RG214/U Double Shield 1658-T-XX 30.8 50 Ø .425 MATERIALS: Conn:1st end – Type “N” Male, See table above.

d1658

Abstract: 2SD1658 Vbe 8 V K800
Contextual Info: D1658 シリコンNPNエピタキシャル形 ダーリントン接続 東芝トランジスタ D1658 ○ マイクロモータドライブハンマドライブ用 ○ スイッチング用 ○ 電力増幅用 • 単位: mm 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)

d1658

Abstract: transistor D1658 2SD1658
Contextual Info: D1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor D1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

transistor D1658

Abstract: d1658
Contextual Info: D1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor D1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

d1658

Abstract: 2SK3713 2SK3713-SK MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3713 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3713 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3713-SK TO-262 designed for high voltage and high speed switching

transistor D1658

Abstract: d1658 2SD1658
Contextual Info: D1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor D1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

2SK3713

Abstract: 2SK3713-SK MP-25
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: D1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor D1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

D2089

Contextual Info: BROADBAND POWER DIVIDERS FEATURES • • • • • Multioctave bands Microstrip construction Low loss High isolation Small size MITEQ offers a broad range of Wilkinson-type power dividers covering multioctave bands from 2 to 18 GHz, and custom power dividers up to 40 GHz are also available. Power dividers up to 16-way are available as standard

D0239

Abstract: d0237 D0889 d0289 d0249
Contextual Info: BROADBAND POWER DIVIDERS FEATURES • • • • • Multioctave bands Microstrip construction Low loss High isolation Small size MITEQ offers a broad range of Wilkinson-type power dividers covering multioctave bands from 2 to 18 GHz, and custom power dividers up to 40 GHz are also available. Power dividers up to 16-way are available as standard

transistor D1658

Abstract: 2SD1658 D1658
Contextual Info: D1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor D1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)