2SA141 Search Results

2SA1482

Contextual Info: O rd e rin g n um b e r : EN 1 7 8 8 A N° 1788A II 2SA1418/2SC3648 P N P/N PN E p itax ial P la n a r Silicon T ran sisto rs S A t Y O High-Voltage Switching, _Predriver Applications A pplications . Color TV audio output, converter, in v e rter

Contextual Info: ^O rd e rin g number . EN 2 0 0 5 A 2SA1416/2SC3646 NO.2005A PN P/N PN Epitaxial Planar Silicon Transistors SAiYO i High-Voltage Switching Applications Features . Adoption of FBET, MBIT processes. . High breakdown voltage and large current capacity. . Fast switching time.

Contextual Info: 2SA1418 / 2SC3648 Ordering number : EN1788B SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1418 / 2SC3648 High-Voltage Switching, Preriver Applications Applications • Color TV audio output, inverter. Features • • •

Contextual Info: 2SA1416 / 2SC3646 Ordering number : EN2005B SANYO Semiconductors DATA SHEET 2SA1416 / 2SC3646 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.

Contextual Info: 2SA1415 / 2SC3645 Ordering number : EN1720B PNP / NPN Epitaxial Planar Silicon Transistors 2SA1415 / 2SC3645 High-Voltage Switching, Predriver Applications Features • • • • • Adoption of FBET process. High breakdown voltage VCEO=160V . Excellent linearity of hFE and small Cob.

2SA1415

Abstract: 2SA141
Contextual Info: 2SA1415 SPICE PARAMETER PNP SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Value Parameter IS 42.00f BF 200.0 NF 992.0m VAF 45.0 IKF 50.00m ISE 1.000p NE 2.00 BR 10.0 NR 1.00 VAR 20.0 IKR 10.00m Unit Parameter Value Unit A ISC NC RB IRB RBM RE RC XTB EG XTI 30.70f

2SA1418

Abstract: 2SC3648 ITR03558 2SC36 V8141
Contextual Info: 2SA1418 / 2SC3648 Ordering number : EN1788B SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1418 / 2SC3648 High-Voltage Switching, Preriver Applications Applications • Color TV audio output, inverter. Features • • •

b 817

Abstract: toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a 2SA1194
Contextual Info: - £ Type No. jcg 7 |3 £ Manuf. & T T S « B m SANYO 2SA1703 2SB 793A 2SB 794 2SB 795 fé 2SB 798 2SB 799 . B S b a B H 2SB1119 2SB1122 2SAI 416 m B « 2SB1122 2SB1122 2SA1416 2SA1416 2SA1416 2SA1418 2SB 813 2SB 814 . 2SB 815 2SB 816 _ 2SB 817 ✓ 2SB 818

2SA1416

Abstract: 2SC3646
Contextual Info: Ordering number:EN2005A 2SA1416/2SC3646 NO.2005A SA \YO PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications 1 Features . Adoption of FBET, MBIT processes. . High breakdown voltage and large current capacity. . Fast switching time.

C3649

Abstract: CQ 419 2007a 2SA1419 2SC3649 SC3649 2SA419
Contextual Info: Ordering number: EN 2007A 2SA1419/2SC3649 PNP/NPN Epitaxial Planar Silicon Transistors H igh-V oltage Sw itching A pplications Features . Adoption of FBET, MBIT processes. . High breakdown voltage and large current capacity . Very small size making it easy to provide high-density hybrid ICs

Contextual Info: Ordering number : EN2005C 2SA1416/2SC3646 Bipolar Transistor http://onsemi.com – 100V, (–)1A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s

2SC3649

Abstract: 2SA1419
Contextual Info: 2SA1419 / 2SC3649 注文コード No. N 2 0 0 7 B 三洋半導体データシート 半導体ニューズ No.N2007A をさしかえてください。 2SA1419 / 2SC3649 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ 高耐圧スイッチング用

2SC1417

Abstract: d250m
Contextual Info: Ordering number:ENN2006A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1417/2SC3647 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Ultrasmall size making it easy to provide highdensity, small-sized hybrid ICs.

2SA1415

Abstract: 2SC3645
Contextual Info: 2SA1415 / 2SC3645 Ordering number : EN1720B SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1415 / 2SC3645 High-Voltage Switching, Predriver Applications Features • • • • • Adoption of FBET process. High breakdown voltage VCEO=160V .

ic 4017

Abstract: 4017 ic DC 4017 IC 2SA1415 2SC3645 IC 4017 B ITR03510
Contextual Info: 2SA1415 / 2SC3645 注文コード No. N 1 7 2 0 B 三洋半導体データシート 半導体ニューズ No.N1720A をさしかえてください。 2SA1415 / 2SC3645 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ 高耐圧スイッチングプリドライバ用

Contextual Info: 2SA1416 / 2SC3646 Ordering number : EN2005C SANYO Semiconductors DATA SHEET 2SA1416/2SC3646 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity

Contextual Info: 2SA1418 / 2SC3648 Ordering number : EN1788B PNP / NPN Epitaxial Planar Silicon Transistors 2SA1418 / 2SC3648 High-Voltage Switching, Preriver Applications Applications • Color TV audio output, inverter. Features • • • • Adoption of FBET, MBIT processes.

2SC3631

Abstract: 2SC3631Z 2SA1412-Z 2SC3631-Z TC1664A
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC3631-Z NPN SILICON TRIPLE DIFFUSED TRANSISTOR PACKAGE DRAWING Unit: mm The 2SC3631-Z is designed for High Voltage Switching, especially in 5.5 ±0.2 • High Voltage VCEO = 400 V tf < 0.7 s • Complement to 2SA1412-Z

Contextual Info: 2SA1419 / 2SC3649 Ordering number : EN2007B SANYO Semiconductors DATA SHEET 2SA1419 / 2SC3649 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.

Contextual Info: 2SA1418 / 2SC3648 Ordering number : EN1788B PNP / NPN Epitaxial Planar Silicon Transistors 2SA1418 / 2SC3648 High-Voltage Switching, Preriver Applications Applications • Color TV audio output, inverter. Features • • • • Adoption of FBET, MBIT processes.

D1825

Abstract: 2sc3631 2SA1412-Z 2SC3631-Z 2sa1412
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1412-Z PNP SILICON TRIPLE DIFFUSED TRANSISTOR PACKAGE DRAWING Unit: mm The 2SA1412-Z is designed for High Voltage Switching, especially in 5.5 ±0.2 • High Voltage: VCEO = −400 V • High Speed: tf ≤ 0.7 s • Complement to 2SC3631-Z

Contextual Info: SMD Type Product specification 2SA1419 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO

Contextual Info: SMD Type Product specification 2SA1417 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO

2007A

Abstract: 2sc3649
Contextual Info: Ordering number : EN 2 0 0 7 A J SA\YOI J r / 2SA1419/2SC3649 No.2007A PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features . Adoption of FBET, MBIT processes. . High breakdown voltage and large current capacity . Very small size making it easy to provide high-density hybrid ICs