ITR03510 Search Results

Contextual Info: 2SA1415 / 2SC3645 Ordering number : EN1720B PNP / NPN Epitaxial Planar Silicon Transistors 2SA1415 / 2SC3645 High-Voltage Switching, Predriver Applications Features • • • • • Adoption of FBET process. High breakdown voltage VCEO=160V . Excellent linearity of hFE and small Cob.

2SA1415

Abstract: 2SC3645
Contextual Info: 2SA1415 / 2SC3645 Ordering number : EN1720B SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1415 / 2SC3645 High-Voltage Switching, Predriver Applications Features • • • • • Adoption of FBET process. High breakdown voltage VCEO=160V .

ic 4017

Abstract: 4017 ic DC 4017 IC 2SA1415 2SC3645 IC 4017 B ITR03510
Contextual Info: 2SA1415 / 2SC3645 注文コード No. N 1 7 2 0 B 三洋半導体データシート 半導体ニューズ No.N1720A をさしかえてください。 2SA1415 / 2SC3645 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ 高耐圧スイッチングプリドライバ用

2SC3645

Contextual Info: Ordering number:ENN1720A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1415/2SC3645 High-Voltage Switching, Predriver Applications Features Package Dimensions unit:mm 2038A [2SA1415/2SC3645] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of FBET process. · High breakdown voltage VCEO=160V .