2SA1415 Search Results

Contextual Info: 2SA1415 / 2SC3645 Ordering number : EN1720B PNP / NPN Epitaxial Planar Silicon Transistors 2SA1415 / 2SC3645 High-Voltage Switching, Predriver Applications Features • • • • • Adoption of FBET process. High breakdown voltage VCEO=160V . Excellent linearity of hFE and small Cob.

2SA1415

Abstract: 2SA141
Contextual Info: 2SA1415 SPICE PARAMETER PNP SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Value Parameter IS 42.00f BF 200.0 NF 992.0m VAF 45.0 IKF 50.00m ISE 1.000p NE 2.00 BR 10.0 NR 1.00 VAR 20.0 IKR 10.00m Unit Parameter Value Unit A ISC NC RB IRB RBM RE RC XTB EG XTI 30.70f

2SA1415

Abstract: 2SC3645
Contextual Info: 2SA1415 / 2SC3645 Ordering number : EN1720B SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1415 / 2SC3645 High-Voltage Switching, Predriver Applications Features • • • • • Adoption of FBET process. High breakdown voltage VCEO=160V .

ic 4017

Abstract: 4017 ic DC 4017 IC 2SA1415 2SC3645 IC 4017 B ITR03510
Contextual Info: 2SA1415 / 2SC3645 注文コード No. N 1 7 2 0 B 三洋半導体データシート 半導体ニューズ No.N1720A をさしかえてください。 2SA1415 / 2SC3645 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ 高耐圧スイッチングプリドライバ用

2SC3645

Contextual Info: O rdering num ber: EN 1720A 2SA1415/2SC3645 N 0. 172 OA SA VYO J PN P/N PN E pitaxial P la n a r Silicon T ransisto rs High-Voltage Switching, Predriver Applications O W O > F e a tu re s . Adoption of FB ET process • H igh breakdow n voltage V c e o = 160V

smd marking AA

Abstract: smd marking TF AA SMD MARKING 2SA1415 AA MARKING
Contextual Info: Transistors SMD Type High-Voltage Switching Applications 2SA1415 Features Adoption of FBET Process High Breakdown Voltage VCEO = 160V Excellent Linearlity of hFE and Small Cob Fast Switching Speed Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage

1720a

Abstract: B1 182 2SA1415 2SC3645 SA1415 B1182
Contextual Info: Ordering n u m b e r: EN 1720A 2SA1415/2SC3645 PNP/NPN Epitaxial Planar Silicon Transistors N 0.I 72OA i S A Ü High-Voltage Switching, Predriver Applications V D F e a tu re s Adoption of FBET process High breakdown voltage Vceo = 160V Excellent linearity of hpE and small c0b

2SC3645

Abstract: 2SA1415
Contextual Info: Ordering number:EN1720A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1415/2SC3645 High-Voltage Switching, Predriver Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage VCEO=160V . · Excellent linearity of hFE and small Cob.

2SC3645

Contextual Info: Ordering number:ENN1720A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1415/2SC3645 High-Voltage Switching, Predriver Applications Features Package Dimensions unit:mm 2038A [2SA1415/2SC3645] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of FBET process. · High breakdown voltage VCEO=160V .

2SA1146

Abstract: 2SB1200 2SB764 2SB793 2SB605 2SB507 2SB744 NEC 2SA874 2SB1185 2SB1576
Contextual Info: - Si % Type No. tt € Manuf. = m SANYO ill TOSHIBA 2 SB 1043 □— A 2SB764 2SB 1044 □— A 2SA1705 2SB 1045 U 2SA1415 2SA1200 2SB 1046 B ±L 2SA1415 2SA1384 2SB 1047 ±L 2SA1415 2SB1200 2SB 1048 i 2SB1126 T 2SA1783 T 2SA1702 2SB 1051 □— A 2SA1338

Contextual Info: SMD SMD Type Type Product specification 2SA1415 Features Adoption of FBET Process High Breakdown Voltage VCEO = 160V Excellent Linearlity of hFE and Small Cob Fast Switching Speed Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

b 817

Abstract: toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a 2SA1194
Contextual Info: - £ Type No. jcg 7 |3 £ Manuf. & T T S « B m SANYO 2SA1703 2SB 793A 2SB 794 2SB 795 fé 2SB 798 2SB 799 . B S b a B H 2SB1119 2SB1122 2SAI 416 m B « 2SB1122 2SB1122 2SA1416 2SA1416 2SA1416 2SA1418 2SB 813 2SB 814 . 2SB 815 2SB 816 _ 2SB 817 ✓ 2SB 818

transistor b985

Abstract: transistor b544 transistor b764 D1111 TRANSISTOR C3117 TRANSISTOR D1153 transistor D1207 TRANSISTOR D1347 transistor D863 B892
Contextual Info: SAfÊYO PCP Power Chip Pack Transistor Series ale, F e a t u r e s ♦ Very small size making it possible to provide high-densi ty. small-sized hybrid lCs. ♦ Various packing of devices are available to meet automatic assembly requirements. ♦ High reliability and stable quality.

en220

Abstract: DTA143ES 2SA1441 1658 NEC 2sa 1659 RT1P431S 2sa1265n 2SB1188 2SB1371 2SA1659
Contextual Info: - m « Type No. 2SA 1648 . 2SA 1649 " 2SA 1650 , 2SA 165! 2SA 1652 2SA 1653 2SA 1654 -• 2SA 1655 2SA 1656 , 2SA 1657 2SA 1658 2SA 1659 2SA 1660 2SA 1661 2SA 1662 2SA 1663 2SA 1664 2SA 1665 2SA 1666 2SA 1667 • 2SA 1668 2SA 1669 2SA 1670 •" 2SA 1671 ^

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SC3953-SPICE

Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE
Contextual Info: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f

2SB1205

Abstract: 2S81119 2Sk222 2sa128
Contextual Info: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf

mosfet k 2038

Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
Contextual Info: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB

STK412-750

Abstract: STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870
Contextual Info: Designed & produced by Triad. www.triad.uk.com Semelab Limited Coventry Road, Lutterworth Leicestershire LE17 4JB, UK Telephone: +44 0 1455 552505 Facsimile: +44 (0)1455 552612 Email: sales@magnatec-tt.com Website: www.magnatec-tt.com A subsidiary of TT electronics plc

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

microphone low-noise ti

Abstract: 2SC1570NP 2SK1068 2SK1069 2SK1332 2SK1375 2SK1578 2SK1646 2sc3067 2SK2091
Contextual Info: GaAs MESFETs Absolute maximum ratings Package type Device 2SK1646 . CP4 Applications Vos V Vgs (V) Id (mA) Electrical characteristics (Ta = 25 -C) loss @ Vds Pr (mW) 91 . loss (mA) NF @ Vds • I d lYfsl @ Vds • I ds Vds , (V) |Yfe| (mS) Vos

2SA1410

Abstract: 2-7D101A 2SA1441 2SA1409 HV COB 2SA1407 2SA1408 2SA1412 2SA1412-Z 2SA1413
Contextual Info: - 34 - <Ta=25'C.*EniiTc=25‘ Ç & £ s iê VcBO V) VCEO (V) lc (D C ) (A) Pc m Pci (W) ICBO (W) M fà ft 1É (Ta=25‘ C) , hF (/¿A) VcB (V) Vct (V) (A) [*EP[âtypüf] , (V) > , , V le (A) (V) Ib (A) 2SA1406 CRT Vout -200 -200 -0.1 1. 2 7 -0.1 -150 40

C3117

Abstract: transistor b764 TRANSISTOR D400 transistor D1207 s transistor b985 TRANSISTOR D1347 B892 D1207 s Transistor d1153 B985
Contextual Info: SA0YO P C P Power C h i p Pack o te Transistor Series C a s e s F* s at ur* ♦ Very small size making it possible to provide high-densi ty, small-sized hybrid ICs. ♦ Various packing of devices are available to meet automatic assembly requirements. ♦ High reliability and stable quality.