2SA1200 Search Results

S500M

Contextual Info: TOSHIBA 2SA1200 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S A 1 200 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm 1.6MAX. 4.6MAX. High Voltage 1.7MAX. : V q e o - - 150V 0.4 ±0.05 High Transition Frequency : fx = 120MHz (Typ.) P q = 1 ~ 2W (Mounted on Ceramic Substrate)

Contextual Info: TOSHIBA TRANSISTOR. SEM ICONDUCTOR T O SH IB A TECHNICAL 2 SA1200 DATA SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS (2SA1200) Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • • • • • High Voltage :V c e O = - 150V High Transition Frequency : fp= 120MHz (Typ.)

2SA1200

Abstract: 2SC2880
Contextual Info: 2SA1200 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1200 High Voltage Switching Applications • High voltage: VCEO = −150 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1 to 2 W (mounted on a ceramic substrate)

2SA1200

Abstract: 2SC2880
Contextual Info: 2SA1200 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1200 High Voltage Switching Applications • High voltage: VCEO = −150 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1 to 2 W (mounted on ceramic substrate)

2SA1200

Abstract: 2SC2880 A1200
Contextual Info: TO SH IBA 2SA1200 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S A 1 200 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm 1.6MAX. 4.6MAX. High Voltage 1.7MAX. : V q e o - - 150V 0.4 ±0.05 High Transition Frequency : fx = 120MHz (Typ.)

Contextual Info: 2SA1200 TO SHIBA 2 SA 1 2 0 0 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 1 .6 M A X . —J- - 4 .6 M A X . High Voltage :V C E O = —150V High Transition Frequency : frp = 120MHz(Typ.)

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SA1200 HIGH VOLTAGE SWITCHING APPLICATIONS. Unit in mm FEATURES: 4 .6 M AX. . High Voltage : VcEO=-150V . High Transition Frequency : fx=120MHz . Pc= l ~ 2 W L.6 MA X . 1 .7 MAX . j a = Mounted on Ceramic Substrate . Small Flat Package

2SA1200

Abstract: smd marking Y 2SC2880 SMD B100
Contextual Info: Transistors SMD Type High Voltage Switching Applications 2SA1200 Features High Voltage : VCEO = -150V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SC2880 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage

Contextual Info: SMD Type Product specification 2SA1200 Features High Voltage : VCEO = -150V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SC2880 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage VCEO

Contextual Info: 2SA1200 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1200 High Voltage Switching Applications • High voltage: VCEO = −150 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1 to 2 W (mounted on a ceramic substrate)

2SA1281

Abstract: 2SA1281C 2NS401 2SA949Y 2SA429G 2SA1013-0 C 2N4888 2SA429GTM 2SA429 2SA778AK
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number S 10 >= AST5401 2NS401 S05401 TMPT5401 2SA429 2SA940 2SA778K 2SA949 2SA429G-TM-0 2SA12000 lS 20 2S 30 -40 45 SO ~:dl~~r:C PN4888 PN4888 PN4889 PN4889 PN4889 2N4888 2SA916 2SA916 FairchildSC CentralSemi FairchildSC

2SA1146

Abstract: 2SB1200 2SB764 2SB793 2SB605 2SB507 2SB744 NEC 2SA874 2SB1185 2SB1576
Contextual Info: - Si % Type No. tt € Manuf. = m SANYO ill TOSHIBA 2 SB 1043 □— A 2SB764 2SB 1044 □— A 2SA1705 2SB 1045 U 2SA1415 2SA1200 2SB 1046 B ±L 2SA1415 2SA1384 2SB 1047 ±L 2SA1415 2SB1200 2SB 1048 i 2SB1126 T 2SA1783 T 2SA1702 2SB 1051 □— A 2SA1338

2SC2880

Abstract: 2SA1200
Contextual Info: Transistors SMD Type High Voltage Switching Applications 2SC2880 Features High Voltage : VCEO = 150V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SA1200 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage

2SA1200

Abstract: 2SC2880 A1200
Contextual Info: 2SA1200 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S A 1 200 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm 1.6MAX. —j- 4.6MAX. High Voltage : V^EO = —150V 1.7MAX. 0.4 + 0.05 High Transition Frequency : frp = 120MHz (Typ.)

Contextual Info: POWER M INI PACKAGE S E R IES ^ ! SOT-89 a.î'VîYw; 'S T T ITT Application Pc * Mounted on ceramic substratq o f 250mmJ x 0.8mm v CEO >C Pc PC* V) (A) (W) (W) 1.5 0.5 1 h FE Type No. NPN PNP f t TYP. v CE(sat) M AX- V CE >C 'c 'b V CE •e (V) Im A l

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

Contextual Info: T O SH IB A 2SC2880 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC2880 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. 1.6MAX. High Voltage : VCEO = 150V High Transition Frequency : fp = 120MHz P q = 0.8—2W (Mounted on Ceramic Substrate)

2SC3301

Abstract: 2sa120 2SC2880
Contextual Info: llll Powered by 2 POWER MINI PACKAGE SERIES (S0T-89) ICminer.com Electronic-Library Application Pc * Mounted on ceramic substrat? of 250mma x 0.8mm v CE0 >C Pc PC* (V) (A) (W) (W) hFE Typo No. NPN PNP f-j- TYP. v CE(sat) M A X - V CE ic •c •b V CE >E

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

Contextual Info: 2SC2880 SILICON NPN TRIPLE DFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS. Unit in mm 1.6 MAX 4.6M A X. FEATURES: . High Voltage 1.7 MAX. : V c e o =150V m . High Transition Frequency : fT=120MHz - . P c = l ~ 2 W Mounted on Ceramic Substrate . Small Flat Package

en220

Abstract: DTA143ES 2SA1441 1658 NEC 2sa 1659 RT1P431S 2sa1265n 2SB1188 2SB1371 2SA1659
Contextual Info: - m « Type No. 2SA 1648 . 2SA 1649 " 2SA 1650 , 2SA 165! 2SA 1652 2SA 1653 2SA 1654 -• 2SA 1655 2SA 1656 , 2SA 1657 2SA 1658 2SA 1659 2SA 1660 2SA 1661 2SA 1662 2SA 1663 2SA 1664 2SA 1665 2SA 1666 2SA 1667 • 2SA 1668 2SA 1669 2SA 1670 •" 2SA 1671 ^

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo