2SA1761 Search Results

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1761 U nit in mm POWER AMPLIFIER APPLICATIONS. POW ER SW ITCHING APPLICATIONS. • • • Low Collector-Emitter Saturation Voltage : v CE sat = - 0.5V (Max.) (Ic = - 1.5A) High Speed Switching Time : tstg = 0.2(u s (Typ.) Complementary to 2SC4604.

A1761

Abstract: 2SA1761 2SC4604
Contextual Info: 2SA1761 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1761 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −0.5 A) • High-speed switching: tstg = 0.2 s (typ.)

A1761

Abstract: 2SA1761 2SC4604
Contextual Info: 2SA1761 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1761 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −0.5 A) • High-speed switching: tstg = 0.2 s (typ.)

A1761

Abstract: 2SA1761 2SC4604
Contextual Info: TO SH IBA 2SA1761 2 S A 1 761 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • SILICON PNP EPITAXIAL TYPE Unit in mm 5.1 MAX Low Colleetor-Emitter Saturation Voltage : VCE sat “ —0.5V (Max.) (Ic = -1.5A ) High Speed Switching Time : ^ ^ = 0.2/^ (Typ.)

A1761

Contextual Info: 2SA1761 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1761 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High-speed switching: tstg = 0.2 µs (typ.)

A1761

Abstract: 2SA1761 2SC4604
Contextual Info: 2SA1761 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1761 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。: VCE (sat) = −0.5 V (最大) (IC = −0.5 A)

2SA1761

Abstract: 2SC4604 A1761
Contextual Info: TO SH IBA 2SA1761 2 S A 1 761 TO SHIBA TRANSISTOR PO W ER A M PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE Unit in mm 5.1 MAX. PO W ER SWITCHING APPLICATIONS • • • Low Colleetor-Emitter Saturation Voltage : VGE sat = -0.5V (Max.) (IC = - 1.5A) High Speed Switching Time : tg tg ^ .2 /^ (Typ.)

A1761

Abstract: 2SA1761 2SC4604
Contextual Info: 2SA1761 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1761 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。: VCE (sat) = −0.5 V (最大) (IC = −0.5 A)

A1761

Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1761 2SC4604
Contextual Info: 2SA1761 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1761 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High-speed switching: tstg = 0.2 µs (typ.)

2SA1301 TOSHIBA

Abstract: b962 2SA1301 2SB1482 2SB1487 Toshiba 2SB754 2SA1467 2SB798 2SB897 2SA1213
Contextual Info: 74 - w. € tt Manuf. T y p e No. 2SB 1507 2SB 1508 2 SB 1509 2SB 1510 2SB 1511 = W H # H £ = n h # 2SB 1512 O — A 2 SB 1513 □ — A 2 SB 1514 □— 2SB 1515 □ — A 2 SB 1516 2 SB 2 SB . H ^ SANYO 2SBS27 1527 2SB 1528 2 SB 1529 2SB1439 2SB1433 2SA1761

Contextual Info: 2SC4604 SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER APPLICATION. Unit in mm 5.1 MAX POWER SWITCHING APPLICATIONS. . Low Collector-Emitter Saturation Voltage : VcE sat = 0.5V(max.) . High Speed Switching (Ic=1.5A) : tstg-0.5 u s (Typ.) 0 75 MAX 1.0 MAX . Complementary to 2SA1761

Contextual Info: TOSHIBA 2SA1761 T O S H IB A T R A N SISTO R SILICO N PNP E P ITA X IA L TYPE 2 S A 1 761 Unit in mm P O W E R A M P L IFIE R A PPLIC A TIO N S . 5.1 MAX P O W E R S W IT C H IN G A PPLIC A TIO N S . • Low Collector-Emitter Saturation Voltage : v CE sat = -0 .5 V (Max.) (Ic = -1.5 A )

Contextual Info: TOSHIBA 2SA1761 2 S A 1 761 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. SILICON PNP EPITAXIAL TYPE Unit in mm PO W ER SWITCHING APPLICATIONS. • • • 5.1 MAX Low Collector-Emitter Saturation Voltage : VCE sat “ —0.5V (Max.) (IC = —1.5A) High Speed Switching Time : tgtg = 0.2//s(Typ.)

A1761

Abstract: 2SA1761 2SC4604
Contextual Info: TOSHIBA 2SA1761 2 S A 1 761 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON PNP EPITAXIAL TYPE POWER SWITCHING APPLICATIONS. • Unit in mm 5.1 M A X Low Colleetor-Emitter Saturation Voltage • VCE sat “ —0.5V (Max.) (1^ = -1.5A) High Speed Switching Time : tgtg = 0.2y«s (Typ.)

c4604

Abstract: 2SC4604 2SA1761
Contextual Info: 2SC4604 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4604 Power Amplifier Application. Power Switching Applications. Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) • High-speed switching: tstg = 0.5 µs (typ.)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

Contextual Info: 2SC4604 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4604 Power Amplifier Application. Power Switching Applications. Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) • High-speed switching: tstg = 0.5 µs (typ.)

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs