TO3PFM Search Results

to3pfm

Abstract: NTE2636 VCes 1500V
Contextual Info: NTE2636 Silicon NPN Transistor Horizontal Deflection w/Internal Damper Diode Features: D High Breakdown Voltage: VCES = 1500V D Built–In Damper Diode D Isolated TO3PFM Type Package Applications: D TV/Character Display Horizontal Deflection Output Absolute Maximum Ratings: TA = +25°C unless otherwise specified

2SA1803

Abstract: 2SC4688
Contextual Info: JMnic Product Specification 2SA1803 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFM package ・Complement to type 2SC4688 APPLICATIONS ・Power amplifier applications ・Recommend for 40W high fidelity audio frequency amplifier output stage PINNING see Fig.2

diode BB102

Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,

2SA1804

Abstract: TO3PFM 2SC4689 Jmnic
Contextual Info: JMnic Product Specification 2SA1804 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFM package ・Complement to type 2SC4689 APPLICATIONS ・Power amplifier applications ・Recommend for 55W high fidelity audio frequency amplifier output stage PINNING See Fig.2

2SA1804

Abstract: 2SC4689
Contextual Info: Product Specification www.jmnic.com 2SC4689 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFM package ・Complementary to 2SA1804 ・Recommend for 55W high fidelity audio frequency amplifier APPLICATIONS ・Power amplifier applications PINNING PIN

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK1342

Abstract: 2SK1775
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SK1165

Abstract: 2SK1166 2SK1328 2SK1329
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SC4688

Abstract: 2SA1803
Contextual Info: SavantIC Semiconductor Product Specification 2SC4688 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFM package ·Complement to type 2SA1803 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage

2sd1911

Abstract: TO3PFM
Contextual Info: SavantIC Semiconductor Product Specification 2SD1911 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFM package ·High breakdown voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in TV horizontal output applications PINNING

2sk1405

Abstract: DSA003715
Contextual Info: 2SK1405 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast diode trr = 140 ns Suitable for motor control, switching regulator, DC-DC converter

2SK1341

Abstract: 2SK1859 DSA003759
Contextual Info: 2SK1859 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low Drive Current No secondary breakdown Suitable for Switching regulator Outline TO-3PFM D G 1 S 2 3 1. Gate 2. Drain

HAT1058C

Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,

Contextual Info: 2SC5448 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output HITACHI Features • High breakdown voltage VCB0 = 1500 V • High speed switching tf = 0.15 ¡iscc typ. at fH= 64 kHz • Isolated package TO-3PFM Outline TO-3PFM 1. Base

Contextual Info: 2SC4879 Silicon NPN Triple Diffused HITACHI Application TV/character display horizontal deflection output Features • High speed switching tf < 0.5 |js • High breakdown voltage VCB0 = 1700 V • Isolated package TO-3PFM Outline 2SC4879 Absolute Maximum Ratings Ta = 25 °C

Contextual Info: 2SC4963 Silicon NPN Triple Diffused HITACHI Application TV/character display horizontal deflection output Features • High breakdown voltage VCES = 1700 V • Built-in damper diode type • Isolated package TO-3PFM Outline 2SC4963 Absolute Maximum Ratings Ta = 25 °C

Hitachi DSA001651

Contextual Info: 2SJ218 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Hitachi DSA00164

Contextual Info: 2SC4796 Silicon NPN Triple Diffused Application TV/character display horizontal deflection output Features • High speed switching tf ≤ 0.6 µs • High breakdown voltage VCBO = 1700 V • Isolated package TO-3PFM Outline TO-3PFM 1. Base 2. Collector 3. Emitter

2SC5251

Abstract: Hitachi DSA00164
Contextual Info: 2SC5251 Silicon NPN Triple Diffused Planar Preliminary Application Character display horizontal deflection output Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.2 µsec typ • Isolated package TO-3P•FM (N) Outline TO-3PFM (N)

Hitachi DSA00164

Contextual Info: 2SC4879 Silicon NPN Triple Diffused Application TV/character display horizontal deflection output Features • High speed switching tf ≤ 0.5 µs • High breakdown voltage VCBO = 1700 V • Isolated package TO-3PFM Outline TO-3PFM 1. Base 2. Collector 3. Emitter

2SC4747

Abstract: Hitachi DSA00164
Contextual Info: 2SC4747 Silicon NPN Triple Diffused Application Character display horizontal deflection output Feature • High breakdown voltage VCBO = 1500 V • High speed switching tf ≤ 0.3 µs Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 2SC4747 Absolute Maximum Ratings Ta = 25°C

2SK1275

Abstract: 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16
Contextual Info: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

2SD1910

Abstract: 2sd1910 transistor
Contextual Info: Silicon Diffused Power Transistor 2SD1910 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA

Contextual Info: 2SC5219 Silicon NPN Triple Diffused Planar HITACHI Application Character display horizontal deflection output Features • High breakdown voltage VCES= 1700 V • High speed switching tf = 0.15 |isec typ • Built-in damper diode type • Isolated package