2SC3932 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3932G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification/oscillation/mixing • Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3932G Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing • Features ■ Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3932 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 • Features 0.15+0.10

2SC3932

Contextual Info: Transistors 2SC3932 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing 0.425 Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10 0.9±0.1 3 • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment

Contextual Info: Transistor 2SC3932 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 1.25±0.1 1 0.65 ● High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and

2SC3998

Abstract: 2sc4640 4793 2SC1815 2sd637 2sc2555 2SC4804 C4463 4802 2SD1546
Contextual Info: - m « Type No. a € Manuf. H * SANYO X £ TOSHIBA B Is NEC B 3¿ HITACHI S ± Ä FUJITSU fâ T MATSUSHITA 2SC 4773 □— A 2SC4406 2SC4244 2SC4463 2SC3932 2SC 4774 * □— A 2SC4407 2SC4250 2SC44S3 2SC4670 2SC 4775 □— A 2SC 4776 □— A 2SC4640 2SC1815

2SC3932

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3932 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2

2SC3932

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3932 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 • Features 0.15+0.10

2SC3932

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3932 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1

2SC3932G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3932G Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing • Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment

2SC3932G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3932G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification/oscillation/mixing • Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3932 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1

2SC3932

Contextual Info: Transistors 2SC3932 Silicon NPN epitaxial planer type 0.425 Unit: mm For high-frequency amplification / oscillation / mixing 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • Features 0.9±0.1 3 1 2 0.2±0.1 • High transition frequency fT

GFB marking

Abstract: 2SC3932
Contextual Info: Transistors 2SC3932 Silicon NPN epitaxial planer type 0.425 Unit: mm For high-frequency amplification / oscillation / mixing 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • Features 0.9±0.1 3 1 2 0.2±0.1 • High transition frequency fT

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete UP05C8GF Silicon NPN epitaxial planar type (Tr) Silicon epitaxial planar type (CCD load device) For CCD output circuits • Package  Two elements incorporated into one package (Tr + CCD load device)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc3943

Abstract: 2SC4117 2sc2060 2SC2553 2SC3170 2SC4258 2SC2242 2SC3536 4181A 2SC3039
Contextual Info: - 184 - a « Type No. tt « Manuf. 2SC 4179 a a 2SC 4180 y s w 2SC 4181 m K ^ 2SC 4181A 2SC 4182 ^ H * SANYO 2SC4400 M TOSHIBA £ NEC B tL HITACHI V ± il F U J ITSU fô T MATSUSHITA 2SC4253 2SC3936 2SC4117 2SD1821 H £ MITSUBISHI 2SC4258 2SC3938 2SC4116 —

4288A

Abstract: 2sc3936 hitachi 4269 2SC4903 2SC3874 2SC3995 2SC4186 2SC3931 2SC3210 2SC4083
Contextual Info: - 18 6 - Si € Type No. tt € Manuf. 1nJ 1“ ^ £ tN 2SC 4247 2SC 4248 2SC 4249 H * SANYO a s£ % TOSHIBA NEC ± a FUJITSU % T MATSUSHITA 2SC4404 2SC4186 2SC4903 2SC3934 2SC4404 2SC4186 2SC4264 2SC3934 2SC4263 2SC3931 2SC4400 2SC 4250 tL HITACHI H £ MITSUBISHI

2SC1571

Abstract: 2sc3828 4088B 2SC3904 4082 mitsubishi 2SC3609 2SC4082 2SC4161 K 4087 2SC4246
Contextual Info: tt SS! £ T y p e No. € Manuf. ft H SANYO 3R *£ TOSHIBA m b NEC Ä ± àfi FUJITSU fâ T M ATSUS H I T A Z £ MITSUBISHI □ — A ROHM 2SC4082 2SC4259 2SC 4068 tö 2SC 4069 h UN2217 DTCÎ 2 4 G K h UN4217 DTC124GS 2SC 4070 2SC 4071 2SC 4073 n ft =- ft

2SC3532

Abstract: 2SC3533 2SC3082K 2SC3170 2SC4242 2SC4212 25C2335 2SC3077 2SC3531 2SC3535
Contextual Info: - M % it T y p e No. 2 SC 4 2 1 0 2SC £ Manuf. H b £ SANYO TOSHIBA = n 2SC 4212 ^ te T 2SC 4213 / M £ 2SC 4215 > 2SC 4216 ^ 2SC 4217 J = n 2SC 4218 y H & ÌH 2SC 4219 2SC2621 2SC4181 J 2SC 4221 J 2SC3425 2SC2688 ± FUJITSU ÒS te IE 2SC4400 2SC4415 2SC4178

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

UP05C8P

Abstract: 2SC3932G UP05C8PG
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete UP05C8P Silicon NPN epitaxial planar type (Tr) Silicon epitaxial planar type (CCD load device) For CCD output circuits • Package  Two elements incorporated into one package (Tr + CCD load device)

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)