1100M Search Results

CBC2518T2R2M

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBC2518T2R2M Features Item Summary 2.2 H(±20%), 890mA, 1100mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions

UR18650s

Contextual Info: Lithium Ion UR18650S Features & Benefits Specifications • High drain model high power density • Long, stable power with a flat discharge voltage • Ideal for power tools, Ebikes, and robotics. Rated capacity(1) Min. 1100mAh Capacity(2) Min. 1100mAh

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRC2012T2R2MD Features Item Summary 2.2 H(±20%), 1100mA, 1000mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRC2012T2R2MD Features Item Summary 2.2 H(±20%), 1100mA, 1000mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRC2012T1R5MD Features Item Summary 1.5 H(±20%), 1200mA, 1100mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions

KSC1730

Contextual Info: KSC1730 KSC1730 TV VHF, UHF Tuner Oscillator • High Current Gain Bandwidth Product : fT=1100MHz • Output Capacitance : COB=1.5pF MAX. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS8040T101MJGK Features Item Summary 100 H(±20%), 1100mA, 1000mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions

Contextual Info: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS4010T3R3MDGG Features Item Summary 3.3 H(±20%), 1100mA, 1400mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 5000pcs Products characteristics table External Dimensions

Contextual Info: GEC PLE S S EY < U N I PRELIM IN ARY INFORMATION l.J c 0S3934 - 2.7 SP8713 1100MHz VERY LOW CURRENT THREE MODULUS DIVIDER The S P 8713 is a sw itchab le divide by 64/65/72 programmable divider which is guaranteed to operate up to 1100MHz. It will operate ram a supply of 2.7V to 5.5V and

Contextual Info: Si GEC PLESSEY PRELIM IN ARY INFORMATION S E M I C O N D U C T O R S SP8715 1100MHz VERY LOW CURRENT MULTI-MODULUS DIVIDER The SP8715 is a switchable divide by 64/65, 128/129 programmable divider which is guaranteed to operate up to 1100MHz. It will operate from a supply of 2.7V to 5.5V and

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET ASSP Dual Serial Input PLL Frequency Synthesizer MB15F07SL • DESCRIPTION The Fujitsu MB15F07SL is a dual, serial input Phase Locked Loop PLL frequency synthesizer with two 1100MHz prescalers. Both prescalers have a dual modulus division ratio of 64/65 or 128/129 enabling pulse swallow operation.

Contextual Info: &1H > 1 !W i w GEC P L ES S E Y JULY 1993 S E M I C O N D U C T O R S PRELIMINARY INFORMATION DS3830-1.2 SP8715 1100MHz VERY LOW CURRENT MULTI-MODULUS DIVIDER The SP8715 is a switchable divide by 64/65, 128/129 programmable divider which is guaranteed to operate up to

1025MHz filter

Contextual Info: JXWBLB-T-BP-1100-100-9CS 1100MHz Cavity Band Pass Filter TEST REPORT For JXWBLB-T-BP-1100-100-9CS 1 JXWBLB-T-BP-1100-100-9CS 1100MHz Cavity Band Pass Filter Technical Specification 1.05~1.15 Frequency Range GHz Insertion Loss at Center Frequency(dB) 1 max

100E131

Contextual Info: SY10E131 SY100E131 FINAL 4-BIT D FLIP-FLOP DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ 1100MHz min. toggle frequency Extended 100E VEE range of –4.2V to –5.5V Differential output Individual and common clocks Indivldual asynchronous reset Paired asynchronous sets

SLM-090A1

Abstract: SLM-090A
Contextual Info: HITACHI “ METALS 800 / 900 MHz Band Chip Multilayer D.B.MIXER Model No. SLM-090A1 Equivalent Circuits Shape & Size Specifications Lo Level +7dBm Typ. Conversion Loss Frequency RF:700-1000MHz L0:700-1100MHZ IF :DC - 400MHz Impedance Isolation LO-RF:18dB Min. 30dB Typ.

GS9002

Abstract: GS9005A GS9008A GS9008ACKA GS9008ACKAE3 GS9015A GS9028
Contextual Info: GENLINX GS9008A Cable Driver with Two Adjustable Outputs DATA SHEET DESCRIPTION • two output pairs, adjustable from 0 to 1100mVp-p into 75 Ω loads The GENLINX™ GS9008A is a bipolar integrated circuit designed to drive two 75 Ω co-axial cables at data rates

29782

Abstract: TYPICAL APPLICATION DATA 5501 GS9002 GS9005A GS9007A GS9009A GS9009ACKB GS9009ACKBE3 GS9015A 14 PIN GENNUM
Contextual Info: GENLINX GS9009A Cable Driver with Four Adjustable Outputs DATA SHEET DESCRIPTION • two output pairs, adjustable from 0 to 1100mVp-p into 75 Ω loads The GENLINX™ GS9009A is a bipolar integrated circuit designed to drive four 75 Ω co-axial cables at data rates

Contextual Info: UMZ-533-D16-G UMZ-533-D16G MICROSTRIP Voltage controlled oscillator MICROSTRIP VOLTAGE CONTROLLED OSCILLATOR Package: D16, 12.7mm x 12.7mm x 5.59mm VCC Features  Ultra-Linear Tuning/Low Phase Noise  Frequency: 1000MHz to 1100MHz  Resonator: Microstrip

Contextual Info: KSC2757 KSC2757 Mixer Oscillator for VHF Tuner • High Current Gain Bandwidth Product : fT=1100MHz TYP 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter

LT5571

Abstract: LT5568
Contextual Info: LT5571 620MHz – 1100MHz High Linearity Direct Quadrature Modulator DESCRIPTION FEATURES            Direct Conversion from Baseband to RF High Output: –4.2dB Conversion Gain High OIP3: 21.7dBm at 900MHz Low Output Noise Floor at 20MHz Offset:

SY100E151

Abstract: SY10E151 SY10E151JI
Contextual Info: SY10E151 SY100E151 6-BIT D REGISTER Micrel, Inc. SY10E151 SY100E151 DESCRIPTION FEATURES • 1100MHz toggle frequency ■ Extended 100E VEE range of –4.2V to –5.46V The SY10/100E151 offer 6 edge-triggered, high-speed, master-slave D-type flip-flops with differential outputs,

transistor t9018

Abstract: 9018 T9018F
Contextual Info: T9018 9018 NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=1100MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating 2.4 1.3 Unit Vcbo 30 V Collector-Emitter Voltage

KSC2757

Contextual Info: KSC2757 NPN EPITAXIAL SILICON TRANSISTOR MIXER OSCILLATOR FOR VHF TUNER SOT-23 HIGH fT fT=1100MHz TYP. ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

HR-AAC

Abstract: CELL 1100MAH
Contextual Info: Cell Type HR-AAC Specifications Type : Nickel-Metal Hydride Battery Size : AA Typical 1100mAh Minimum 950mAh Capacity 1 14.2 mm Nominal Voltage 1.2V Charging Current x Time 50.0 mm Fast Charge 2) 1100 mA x about 1.1h Charge Fast Charge 2) Condition 0°C - 40°C