CELL Search Results

Low Drop Out Regulators

Abstract: 7585C DIL 16
Contextual Info: o UCC2930-3\UCC3930-3 IIMTKORATKO C IR C U IT S ADVANCED INFORMATION UNITRODE Cellular Telephone Power Converter DESCRIPTION FEATURES BiCMOS Low Power RF/Cellular power management Negative 2.5 Volt @ 5 m A regulator for GaAs MESFET Separate Micro-power 3.3 V logic

Contextual Info: UCC3911 y UNITRODE PRELIMINARY Lithium-Ion Battery Protector FEATURES BLOCK DIAGRAM • Protects Sensitive Lithium-Ion Cells from Overcharging and Over-Discharging • Used for Two-Cell Lithium-Ion Battery Packs • No External FETs Required • Provides Protection Against

Contextual Info: y UCC3958 -1/-2/-3/-4 UNITRODE PRELIMINARY Single Cell Lithium-Ion Battery Protection Circuit FEATURES • Protects Sensitive Lithium-Ion Cells Form Over Charging and Over Discharging • Dedicated for One Cell Applications • Does Not Require External FETs or Sense

S-AU25

Abstract: SAU25
Contextual Info: i TOSHIBA RF POWER AMPLIFIER MODULE - S-AU25 900MHz UHF POWER AMPLIFIER MODULE EUROPE CELLULAR RADIO FEATURES : Unit in mm . Built-in Driver Stage 2-R2.1±a2 . Output Power (6W) is Directly Gained by VCO(lmW). %

TC160G

Abstract: toshiba LGA Nand TC170C14 TC26SC TC170C1 TC170C29
Contextual Info: TOSHIBA TC170C CMOS Standard Cell 0.7\xm , 5.0V ASICs The 0.7nm, 5V TC170C allows higher area efficiency, system performance and device integration with lower power than previous generation 5V standard cell products Benefits • Advanced 0.7 micron CMOS process with fast 250ps gate

TC51832FL10

Abstract: TC51832 TC51832FL-10 TC51832PL-10 256IC 832P
Contextual Info: 832P/S 832 P/S 832P/S 32,768 WORD x 3 BIT CMOS PSEUDO STATIC RAM IDESCRIPTION] The TC51832 Family is a 256IC bit high-speed CMOS Pseudo-Static RAM organized as 32,768 words by 8 bits. The TC51832 Family utilizes one transistor dynamic memory cell array with

Low Drop Out Regulators

Abstract: 5V1 55C
Contextual Info: o UCC2930\UCC3930 IIM TBO RATBO C IR C U IT S ADVANCED INFORMATION UNITRODE Cellular Telephone Power Converter DESCRIPTION FEATURES BiCMOS Low Power RF/Cellular power management The UCC2930\UCC3930 is a BICMOS Low Power management con­ troller designed for battery powered applications for RF/Cellular tele­

Contextual Info: TC9805P TENTATIVE D A T A TC9805P is a 24-pin CMOS programmable logic device PLD based on EEPROM cells. It has a zero-standby function. Designed using Toshiba's original technology, this device features low power dissipation and inputs that are compatible w ith TTL, NMOS, and CMOS output

CFU450

Abstract: TA31133FN TA31133 Murata BPF filter CAPACITOR 1000pf 25Q 328 CDB450C CDB450
Contextual Info: IF DETECT ICs TENTATIVE DATA FM IF DETECTOR 1C FOR CELLULAR PHONE FEATURES • 2 IF A M P circuits can limit a band w idth according to a usage. • IF A M P has high performance carrier detection RSSI . • Low current consumption • Operating supply voltage range : 2.7~6.0V

TRF1015

Contextual Info: TRF1015 CELLULAR RECEIVER FRONT-END ^ • • • • • • • • • - JUNE 1996 Low-Noise Amplifier LNA , Radio Frequency (RF) Mixer, and Voltage-Controlled Oscillator (VCO) High 1-dB Compression Mode

74ABTH18646A

Contextual Info: SN54ABTH18646A, SN54ABTH182646A, SN74ABTH18646A, SN74ABTH182646A SCAN TEST DEVICES WITH 18-BIT TRANSCEIVERS AND REGISTERS SCBS166D - AUGUST 1993 - REVISED JULY 1996 Members of the Texas Instruments SCOPE Family of Testability Products One Boundary-Scan Cell Per I/O

TA31084

Abstract: TA31084FN
Contextual Info: REGULATOR AND PERIPHERAL TENTATIVE DATA SYSTEM POWER SUPPLY 1C FOR CELLULAR PHONE 3 in d e p e n d e n t r e g u la t o r s o n a chip, v e ry su ita b le f o r cellular, p o rta b le , m o b ile a n d d ig it a l t e le p h o n e s. FEATURES • 3 re g u la t o rs , in d e p e n d e n t o n e a n o t h e r

TC9803

Abstract: CK101 TC9801
Contextual Info: TC9803P, TC9803FW TC9803 is a CMOS programmable logic device PLD based on EEPROM cells. Designed using Toshiba's original technology, this device features low power dissipation and inputs that are compatible w ith TTL, NMOS, and CMOS output voltage levels.

MARKING PA TR SOT-23

Abstract: ultra low igss pA
Contextual Info: TSM3408 60V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 60 Features ID (A) 100 @ VGS = 10V 3.2 130 @ VGS = 4.5V 2.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

Contextual Info: CV110-2A Cellular-band High Linearity Downconverter IF IN GND 26 IF THRU GND 27 GND RF IN 28 25 24 23 22 RF OUT 1 GND 2 21 IF OUT IF Amp 20 GND RF Amp N/C 3 19 N/C IF Feedthru Path GND 4 18 GND LO Driver Amp IF THRU 5 17 BIAS GND 6 16 GND RF/IF 10 11 12 13

12M05019A73

Contextual Info: TQP4M3019 Data Sheet SP3T High Power 2.6V 2x2 mm CDMA Antenna Switch Functional Block Diagram Features • • • • • • • • • • • Product Description pHEMT GaAs MMIC Die cellent Cross-Modulation Performance 108 dBm Typ @Cellular 106 dBm@AWS

mosfet 0835

Abstract: TSM05N03
Contextual Info: TSM05N03 Preliminary 30V N-Channel MOSFET SOT-223 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 30 Features ID (A) 60 @ VGS =10V 5 90 @ VGS =4.5V 3.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

GR-1400

Contextual Info: PHAST-12E Device Programmable, High-Performance ATM/PPP/TDM SONET/SDH Terminator for Level 12 with Enhanced Features TXC-06212 TECHNICAL OVERVIEW LINE SIDE Serial LIU Clocks The PHAST-12E is a highly integrated SONET/SDH terminator device designed for ATM cell, frame, higher order multiplexing,

Contextual Info: TPS60120, TPS60121, TPS60122, TPS60123 REGULATED 3.3 V, 200-mA HIGH EFFICIENCY CHARGE PUMP DC/DC CONVERTERS SLVS257 – NOVEMBER 1999 features applications D D D D D D D D D D D D D D D D D D D D Battery-Powered Applications Two Battery Cells to 3.3-V Conversion

1N1517 equivalent

Abstract: 1N1517
Contextual Info: TPS61000, TPS61001, TPS61002, TPS61003, TPS61004, TPS61005, TPS61006 SINGLE-CELL BOOST CONVERTER WITH START-UP INTO FULL LOAD SLVS279 – MARCH 2000 D D D D D D D Start Up Into a Full Load With Supply Voltages as Low as 0.9 V Over Full Temperature Range Minimum 100-mA Output Current From

DSLAM structure

Contextual Info: CUBIT-622 Device Multi-PHY CellBus Access Device TXC-05805 DESCRIPTION • 622 Mbit/s performance • UTOPIA Level 1/2 interface 8/16-bit with support for 64 ports • Tandem operation for two devices, supporting dual CellBus cell switching in load sharing or redundancy

Contextual Info: TSM2312 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY RDS on (mΩ) VDS (V) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 51 @ VGS = 1.8V 3.9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

ASPEN

Contextual Info: ASPEN Express Device Multi-PHY CellBus Access Device TXC-05806 PRODUCT INFORMATION APPLICATIONS • • • • • ATM Access Multiplexers DSLAM Applications Remote Access Equipment ATM LAN Switch Frame Relay Switch Connection Table SDRAM 15 Row/Col

TSM10N06

Contextual Info: TSM10N06 60V N-Channel MOSFET TO-252 DPAK PRODUCT SUMMARY VDS (V) RDSON (mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 60 Features ID (A) 65 @ VGS = 10V 10 80 @ VGS = 5V 10 110 @ VGS = 4V 9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance