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    2SC2715M Search Results

    2SC2715M Datasheets (1)

    Jiangsu Changjiang Electronics Technology
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SC2715M
    Jiangsu Changjiang Electronics Technology TRANSISTOR Original PDF 127.17KB 3

    2SC2715M Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B 2SC2715M TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial planar Silicon Transistor B C 1. BASE FEATURES High power gain: Gpe=27dB(f=10.7MHz)


    Original
    WBFBP-03B WBFBP-03B 2SC2715M 2SC2715M PDF

    2SC2715M

    Abstract: 30MHZ
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B 2SC2715M TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial planar Silicon Transistor B C 1. BASE FEATURES High power gain: Gpe=27dB(f=10.7MHz)


    Original
    WBFBP-03B WBFBP-03B 2SC2715M 2SC2715M 30MHZ PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B 2SC2715M TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial planar Silicon Transistor B C 1. BASE FEATURES High power gain: Gpe=27dB(f=10.7MHz)


    Original
    WBFBP-03B WBFBP-03B 2SC2715M 2SC2715M PDF