3SK16 Search Results

3SK121

Abstract: 3SK114 SC4251 3SK150 S47B 3SK140 3SK152 3SK159 1SS241 DLP238
Contextual Info: T08H I 2. Discrete Semiconductors for Tuner 2-1 T ra n s is to rs a n d D iod e s fo r T u n e r ANT V R F Amp. r\ _L X £ osc 2-1-1 R F Amp. 2-1-2 M IX Dual Gat« P E T Bi-Transistor UHF VHF y -X S O T -1 4 3 *-X S O T -1 4 3 3SK114 3SK159 3SK152 3SK126 3SK160

LTA 902 sx

Abstract: 3SK166
Contextual Info: 3SK166 Sony. GaAs N-channel Dual-Gate MES FET Description Package Outline 3 S K 166 is a GaAs N-channel Dual-Gate MES FET fo r lo w noise UHF am plifiers. Low noise and high gain characteristics are accom plished by optim um mask pattern design. Easier high frequency circuits adjust­

Contextual Info: 3SK166-0 Transistors N-Channel Dual-Gate UHF/Microwave MESFET V BR DSS (V)8.0 V(BR)GSS (V)6 I(D) Max. (A)80m P(D) Max. (W)150m Maximum Operating Temp (øC)150 I(DSS) Min. (A)20m I(DSS) Max. (A)80m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25

Contextual Info: 3SK165-2 Transistors N-Channel Dual-Gate UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)6 I(D) Max. (A)80m P(D) Max. (W)150m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)30m I(DSS) Max. (A)55m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25

3sk1662

Contextual Info: 3SK166-2 Transistors N-Channel Dual-Gate UHF/Microwave MESFET V BR DSS (V)8.0 V(BR)GSS (V)6 I(D) Max. (A)80m P(D) Max. (W)150m Maximum Operating Temp (øC)150 I(DSS) Min. (A)45m I(DSS) Max. (A)80m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25

3SK166

Abstract: IC 0642 sony ic sony 0642 D6NF sony 0642
Contextual Info: 3SK166 SONY. GaAs N-channel Dual-Gate MES FET Description Package Outline _ U nit: mm 3 S K 1 6 6 is a GaAs N -ch an nel Dual-G ate M E S FET for low noise U H F amplifiers. Low noise and high gain characteristics are accom plished by op tim um

lg 7607

Abstract: NF 948 3SK1651 ik 7817 3SK165 dual-gate 1448S NF 935 NF 936
Contextual Info: 3SK165 SONY. GaAs N-Channel Dual-Gate MES FET Description Package O utline u n it: mm The 3S K 165 is a GaAs N-channel Dual-Gate MES FET for low noise UHF amplifiers and mixers. Low noise and high gain characteristics are accomplished by optimum mask pattern design. Easier high frequency

2SC1815 2SA1015

Abstract: 2SK117 2sk389 2sj74 2SC2240 2SC4667 2sc2458 2sk246 2SC1923 2SC1815
Contextual Info: Transistors T ransistors & D iodes fo r A udio Application A M /FM Tuner Frequency Package . Super Mini SC-59 TO-92 (SC-43) Mini 2SC1923 2SC2668 2SC2714 USM (SC-70) SSM SMQ (SC-61) 2SC4215 2SC4915 3SK126 USQ SMV FM8 SMS TA4007F 3SK160 RF FM 2SK161

3SK165A

Abstract: 3SK165A-0 3SK165A-1
Contextual Info: 3SK165A GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications

3SK164

Abstract: UV 615 TUNER tuner uv 915 e tv sony 1435 tuner uv 915 3sk164-M TA 7332 tuner uv 615 dual-gate 3539 sony
Contextual Info: SONY C O R P / C O M P O N E N T PR OD S IflE D • 0305303 00051^4 3SK164/-M SO N Y GaAs N-Channel Dual-Gate MES FET t P ack a g e O utline Description The 3SK 164 /-M is a G aAs N-channel Dual-Gate M ES FET for low noise U H F amplifiers and mixers. Low noise,

3SK166A

Abstract: nf 922 3SK166A-0 3SK166A-2 C 3807 transistor 3SK166
Contextual Info: 3SK166A GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF

3SK164

Abstract: 3SK184 3SK174 3SK183 3SK192 3SK159 3SK179 3SK182 199D 3SK171
Contextual Info: - 180 - Jl f m s 4t € ffl & m A $ K a æ 3SK160 m, P d/Pch ]/ 3SK159 fë £ V) * * £ * (V) & m V / U H F RF MOS N DE 1 3.5 DS ±8 30m D V / U H F RF MOS N DE 13. 5 DS ±8 30nt D ÜHF TV Tuner MOS N DE 12 DS ±8 Ig s s (max) (A) (min) (A) Vg s (V) % ft

3SK167

Abstract: transistor Bc 313 NF 28
Contextual Info: SANYO SEMICONDUCTOR 1SE CORP D I 7 cn ? 0 7 b 0 D D S 47 2 r-3 1- 3SK167 2046 G a A s Dual Gate M E S Silico n Field-Effect Transistor UHF Amp, Mixer Applications 1908A features . High power gain and small noise resistance . Small input/output capacitance, reverse transfer capacitance

3SK160

Contextual Info: 3SK160 SILICON N CHANNEL DUAL GATE MOS TYPE TV TUNER, VHF RF AMPLIFIER APPLICATIONS. Unit in ram TV TUNER VHF MIXER APPLICATIONS. + 0.2 2.9 -0.3 . Superior Cross Modulation Performance. <£> . Low Noise Figure : NF=2.ldB Typ. 4 a l; 0.85 +0.25 MAXIMUM RATINGS (Ta=25°C)

Contextual Info: 3SK166A SONY GaAs N-channel Dual Gate MES FET Preliminary Description The 3SK166A is an N-channel dual gate GaAs M ES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to

3SK162

Contextual Info: HITACHI 3SK162 SILICON» N-CHANNEL DUAL GATE M O S F E I VHP TV T U N ER RF AMPLIFIER S Scw t 2 Gjic 1 .V < m K > *. L>u:n tl>. T t f i U W i l ITVT> MPAK-4) A S S O L U T E MAXIMUM RATINGS CTa=25*C) Symbol hem MAXIMUM C H A N N E L PO W ER DISSIPATION C U R V E

3SK166A

Abstract: 3SK166A-0 3SK166A-2 3SK1
Contextual Info: 3SK166A GaAs N-channel Dual Gate MES FET Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to the optimal design of input impedance.

Contextual Info: 3SK165-0 Transistors N-Channel Dual-Gate UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)6 I(D) Max. (A)80m P(D) Max. (W)150m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)20m I(DSS) Max. (A)55m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25

Contextual Info: 3SK165 SONY GaAs N-Channel Dual-Gate MES FET Description The 3SK165 is a GaAs N -Channel D ual-G ate MES FET for low noise UHF amplifiers and mixers. Low noise and high gain characteristics are accomplished by opti­ mum mask pattern design. Easier high frequency circuit

3SK165A

Abstract: 3SK165A-1 3SK165A-0
Contextual Info: 3SK165A GaAs N-channel Dual Gate MES FET Preliminary Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation

3SK167-2

Contextual Info: 3SK167-2 Transistors N-Channel Dual-Gate UHF/Microwave MESFET V BR DSS (V)12 V(BR)GSS (V)-6 I(D) Max. (A)55m P(D) Max. (W)200m Maximum Operating Temp (øC)125õ I(DSS) Min. (A)10m I(DSS) Max. (A)25m @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition)

SONY 877

Contextual Info: SONY 3SK166A GaAs N-channel Dual Gate MES FET Preliminary Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-nolse amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to

3SK166A

Abstract: 3SK166A-0 3SK166A-2 N-Channel, Dual-Gate FET
Contextual Info: 3SK166A GaAs N-channel Dual Gate MES FET Preliminary Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to

3SK168

Contextual Info: SANYO SEMICONDUCTOR CÖRP 12E D | OGDS4 7 S =1 T 'il'Z s r 3SK168 GaAs Dual Gate M ES Silicon Field-Effect Transistor 2053 -' TTITD Tb 'S- • U H F Amp, Mixer Applications 2252 Absolute H a z l a n Batlags at Ta=25°C Drain to Source Voltage 'DS Gatel to Source Voltage