D6NF Search Results

Contextual Info: Pb MSL1 Pb-free * Pb Free Part Customer Name Standard System Band II PCS Duplexer Date Part Number FAR-D6NF-1G9600-P1BT Version 2.1db March 31, 2010 Table 1. Electrical Specification Tx Insertion loss to ANT Ripple VSWR ANT Tx Input Power Remarks 3.2 dB

far-d6nf

Abstract: FAR-D6
Contextual Info: Pb MSL1 Pb-free * Pb Free Part Customer Name Standard System W-CDMA Band II / CDMA2000 BC 1 Duplexer Date Part Number FAR-D6NF-1G9600-P1BZ Version 2.1dd March 31, 2010 Table 1. Electrical Specification Condition Item Specification Unit Remarks 3.2 dB -20 to +85 oC

Contextual Info: Pb MSL1 Pb-free * Pb Free Part Customer Name Standard System W-CDMA Band II / CDMA2000 BC 1 Duplexer Date Part Number D6NF1G960P1BR Version 1.1ea Aug. 2, 2012 Table 1-1. Electrical Specification Tx MHz Insertion loss to ANT Ripple (any 5MHz) VSWR Specification

D6PE2G140P3AW

Abstract: FAR-D5PE-881M50-P3EY F6QG2G140P2KA JISC60068-2-21 G6QH2G140N2LA D6HH1G960BH97 F6KB2G595B4HS D5NG782M0M15Z F6KA2G436A4VE D5PE942M5P3GT
Contextual Info: Notice for TAIYO YUDEN products Please read this notice before using the TAIYO YUDEN products. REMINDERS • Product information in this catalog is as of October 2011. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the latest information carefully before practical application or usage of the Products.

D6NF

Abstract: d6nf1 D6NF10 JESD97 STD6NF10 STD6NF10T4 STU6NF10 110B
Contextual Info: D6NF10 STU6NF10 N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET Power MOSFET Features Type VDSS RDS on max ID D6NF10 100 V < 0.250 Ω 6A STU6NF10 100 V < 0.250 Ω 6A • Exceptional dv/dt capability ■ 100% avalanche tested ■

6NF10

Abstract: D6NF10 st mosfet D6NF d6nf1 JESD97 STD6NF10 STD6NF10T4 STU6NF10 240A1
Contextual Info: D6NF10 STU6NF10 N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET Power MOSFET Features Type VDSS RDS on max ID D6NF10 100 V < 0.250 Ω 6A STU6NF10 100 V < 0.250 Ω 6A • Exceptional dv/dt capability ■ 100% avalanche tested 3

SAW/FBAR Devices

Abstract: JISC60068-2-21 FAR-D5PE-881M50-P3EY FAR-F6KA-2G4500-A4VD F6QG2G140P2KA D5PE942M5P3GT FAR-F6KA-1G5859-D4MS F6KB2G350B4HT FAR-F6KY-2G6550-B4UN F5QA836M5M2AR
Contextual Info: Notice for TAIYO YUDEN products Please read this notice before using the TAIYO YUDEN products. REMINDERS • Product information in this catalog is as of October 2012. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the latest information carefully before practical application or usage of the Products.

D6NF10

Abstract: D6NF d6nf1 STD6NF10-1
Contextual Info: D6NF10 D6NF10-1 N-channel 100V - 0.22Ω - 6A - DPAK/IPAK Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID D6NF10-1 100V <0.250Ω 6A D6NF10 100V <0.250Ω 6A • Exceptional dv/dt capabilitY ■ 100% avalanche tested

F6QG2G655P2KE

Contextual Info: Notice for TAIYO YUDEN products Please read this notice before using the TAIYO YUDEN products. REMINDERS • Product information in this catalog is as of October 2013. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the latest information carefully before practical application or usage of the Products.