3SK18 Search Results

sb30-03p

Abstract: 3SK181 DSE015 3SK189
Contextual Info: SAfÊYO L,i s t s a n d 2SJ.3SK type, T y p e No. ma r k i ng 2 S J 187 .1 A 2 S J 19 0 J B 2 S J 19 3 .1 c A M 2 S J 284 B M 2 SJ 285 C M 2 SJ 286 2SJ287 J D 2 SJ 288 J E 2SJ289 J F 2SJ316 .1 G 2 SJ 3 3 5 J H 2SJ381 J I 3SK180 3SK181 3SK189 3SK248 3SK251

3SK181

Abstract: C213G Ig21 J-044
Contextual Info: 3SK181 N 'C h a n n e l E n h a n c e m e n t M O S S ili c o n F E T D u a l G ate 3044 High-Frequency General-Purpose Am p Applications 'Z 2 1 X A A p p lic atio n s . FM tunorc and VHF tuners Features . Enhancement type . Easy AGC (Cut o f f a t V G 2 S = o v >

Hitachi DSA002759

Abstract: 3sk186
Contextual Info: 3SK186 Silicon N-Channel Dual Gate MOS FET Application UHF TV tuner RF amplifier Outline 3SK186 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Drain to source voltage VDS 12 V Gate 1 to source voltage VG1S ±10 V Gate 2 to source voltage VG2S

3SK189

Contextual Info: Ordering number:ENN2671 GaAs Dual Gate MESFET 3SK189 UHF Amplifier, Mixer Application Package Dimensions • Low noise figure : 1.2dB typ 0.8GHz . · High voltage gain : 19dB typ (0.8GHz). · Capable of being operated from low voltage ; VDS=5V. unit:mm 2046A

Contextual Info: 3SK183Q Transistors N-Channel Dual-Gate UHF/Microwave MESFET V BR DSS (V)13 V(BR)GSS (V)-6 I(D) Max. (A)50m P(D) Max. (W)350m Maximum Operating Temp (øC)135õ I(DSS) Min. (A)15m I(DSS) Max. (A)21m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25

08GHz

Contextual Info: Ordering number:ENN2671 GaAs Dual Gate MESFET 3SK189 UHF Amplifier, Mixer Application Package Dimensions • Low noise figure : 1.2dB typ 0.8GHz . · High voltage gain : 19dB typ (0.8GHz). · Capable of being operated from low voltage ; VDS=5V. unit:mm 2046A

3SK184

Abstract: gaas fet marking a FET GAAS marking a gaas fet marking B FET marking FL marking K gaas fet CM 8517 vw t4 gaas fet marking J uhf fet
Contextual Info: 3 S K 184 3SK184 GaAs N MES F E T /G a A s N-Channel MES FET UHF « f t » « » « « Unit •.mm 'U H F Low- noise A m plifier ts -a ■ n S t F e a tu re s • lt* I M IN F < rtfti'./L o w N F • 1-5 OWtO-Jlh 0 65 1 0 15 CM it­ i l i A ftfc«C fc*a»‘« t v - . / L o w C t »

3SK186

Abstract: DSA003646
Contextual Info: 3SK186 Silicon N-Channel Dual Gate MOS FET Application UHF TV tuner RF amplifier Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK186 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Drain to source voltage VDS 12 V Gate 1 to source voltage

3SK189

Contextual Info: Ordering number:EN 2671 3SK189 No.2671 i SAMYO GaAs Dual Gate M ES F E T U H F Amp, Mixer Application 4P* Features •Low noise figure: 1.26B typ 0.8GFIz . •High voltage gain: 19dB typ (0,8GHz) •Capable of being operated from low voltage; V d $=5V Absolute Maximum Ratings atT a = 25°C

3SK180

Abstract: ITR02837 ITR02838 ITR02839 ITR02840 ITR02842 cis unit
Contextual Info: 注文コード No. N 2 1 2 9 B 3SK180 No. N 2 1 2 9 B 71099 半導体ニューズ No.2129 ’ 90 表面実装用トランジスタデータブック No.2129A とさしかえてください。 3SK180 N チャネル MOS 形シリコン電界効果トランジスタ(デュアルゲート)

Contextual Info: 3SK186 Silicon N-Channel Dual Gate MOS FET HITACHI Application UHF TV tuner RF amplifier Outline M P A K -4 1. 2. 3. 4. 1076 Source G a te l G ate2 Drain 3SK186 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Drain to sou rce voltage; ^os 12

transistor C5080

Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
Contextual Info: Products at a Glance by Application High Frequency Use 1. UHF/VHF TV Tuner Block Diagram Line Up Package outline TO-92 A pplication UH F RF 1 M PAK 4 P C M PAK 4 P G aA sM E S M PAK-4 « 3SK228 FET CM PA K -4 4 P 3SK239A 3SK309 MOS FET Vdd= 1 2 V 3SK186 3SK295

Contextual Info: 3SK189-2 Transistors N-Channel Dual-Gate UHF/Microwave MESFET V BR DSS (V)13 V(BR)GSS (V)-3.5 I(D) Max. (A)50m P(D) Max. (W)200m Maximum Operating Temp (øC)125õ I(DSS) Min. (A)8.5m I(DSS) Max. (A)17m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25

3SK181

Contextual Info: SANYO S E M I C O N D U C T O R S3 E D CORP 7117071, O G O t T 0 4 2 T-3I-ZS 3SK181 * N-Channel Enhancement M OS Silicon FET Dual Gate 2046 High-Frequency General-Purpose Amp Applications 2130A Applications . FM tuners and VH F tuners Features . • . .

3SK186

Abstract: tuner LG RIA5
Contextual Info: HITACHI 3SK186 SILICON N CHANNEL DUAL GATE MOS FET UHF TV TUNER R F AMPLIFIER O I : Gr« I » Ci«: I hd« DimcmiMt i«i nvmj S (MPAK'4 • ABSO LU T E MAXIMUM RATINGS (Ta-25’C) hem Symbol MAXIMUM CHANNEL PO W ER DISSIPATION CURVE 3SK186 Unii Drain *o source vollape

3SK180

Abstract: V1H marking 35K18
Contextual Info: O r d e r in g n u m b e r : EN2129B _ 3SK180 N0.2129B N-Channel Silicon MOS FET Dual Gate High-Frequency General-Purpose Amp Applications A pplications • FM tuners and VHF tuners. F eatures • High power gain and low noise figure. • High forward transfer admittance.

Contextual Info: H ITACHI 3SK186 SSUCGN N C H AN N EL DUAL GATE MOS PET UHF TV TUNER R F AM PLIFIER ¿ L & J.L f J j Sí3 ¿~ ' JUSÙSM. i 5 : <;s'.í i » ti*'* : 4 MPAK-4 MAXIMUM CHANNEL POWER DISSIPATION CURVE I ABSO tUTE MAXIMUM RATINGS f!>=25T> Drain :osaurcc voliape

3sk186

Contextual Info: 3SK186 SILICON N-CHANNEL DUAL GATE MOS FET UHF TV TUNER RF AMPLIFIER 1. Source 2. Gate I 3. Gate 2 4. Drain Dimensions in mm (MPAK-4) • ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Item Symbol MAXIMUM CHANNEL POWER 3SK186 Unit 12 V V g is ±10 V Gate 2 to source voltage

3SK180

Contextual Info: Ordering number:ENN2129B N-Channel Silicon MOSFET Dual Gate 3SK180 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • FM tuners and VHF tuners. unit:mm 2046A Features [3SK180] · High power gain and low noise figure.

k 2129 MOSFET

Abstract: 3SK180
Contextual Info: Ordering number:ENN2129B N-Channel Silicon MOSFET Dual Gate 3SK180 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • FM tuners and VHF tuners. unit:mm 2046A Features [3SK180] · High power gain and low noise figure.

3SK190

Abstract: SGF19 2SC2814-2 2sk543 cross 2sc2078 2SK715
Contextual Info: High Frequency Transistors Electrical characteristics Ta = 25 deg. C Absolute maximum ratings Device Package type Application lcao max @ Vcb VcBQ VCEO Vebo (V) (V) (V) , te (mA) Pc (mW) J o Icbo max m hFE @ Vce • Ic Vcb (V) h rc f i @ Vce • lc Vce Ip

c3807

Abstract: C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986
Contextual Info: sa H yo ^ Qui c = V < S ö 1ect 1on Gu 1de S P A \ v \ ÇE0 i cx v m A )\ 1 1 0 2 0 1 5 1 8 5 0 K7 1 5 K2 0 7 4 K2 3 9 5 2 5 K1 5 7 8 K212 K3 1 5 K4 0 4 K4 2 7 K444 K2270 3 0 2 0 C4 4 3 3 5 7 0 0 8 0 0 A1765 C4 4 5 4 B8 0 8 D10 12 B12 9 6 D19 3 6 3 0 K3 0 4

c5227

Abstract: C4858 C5226 C4864 C4406 c4407 2SC5228 2SC4364 SC3778 2sc4858
Contextual Info: SA0YO VERY HIGH-FREQUENCY TRANSISTORS FOR CATV TV TUNER,VTR USE. 1 . C A T V G o n V ö i-t Q i- *:New products Type No. U s e M C P RF Amp MIX , (2 S is o m itte d ) C P 4 C P N P C 4404,C4856*, C4863* C3774.C4857*, C4864* C4858*.C4865* C3778 C5226*

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and