2SK2044 Search Results

Contextual Info: 2SK2044 AP A d v a n c e d P e rfo rm a n c e Series _ Vdss“ 600V N Channel Power M OSFET £4286 F e a tu r e s • Low ON resistance. ■Very high-speed sw itching. • H igh-speed diode (trr= 120ns). ■M icaless package facilitatin g mounting.

K2044

Abstract: ITR02378 2SK2044LS ITR02376 ITR02377 ENN4286B
Contextual Info: Ordering number : ENN4286B 2SK2044LS N-Channel Silicon MOSFET 2SK2044LS Ultrahigh-Speed Switching Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. High-speed diode trr=120ns . Micaless package facilitating mounting. unit : mm

2SK2044

Contextual Info: Ordering number:ENN4286A N-Channel Silicon MOSFET 2SK2044 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · High-speed diode built in trr=120ns . · Micaless package facilitating easy mounting.

Contextual Info: Ordering num ber: EN 4286A 2SK2044 N0.4286A N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • High-speed diode built in t^= 120ns . • Micaless package facilitating easy mounting.

2SK2044

Contextual Info: Ordering number:ENN4286A N-Channel Silicon MOSFET 2SK2044 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · High-speed diode built in trr=120ns . · Micaless package facilitating easy mounting.

2SK2044

Contextual Info: Ordering number : EN 4286A 2SK2044 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • High-speed diode built in tj.r = 120ns . • Micaless package facilitating easy mounting.

Contextual Info: 2SK2044 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)4.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)16 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.0 Minimum Operating Temp (øC)-55

2sk1885

Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Contextual Info: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

3SK164

Abstract: 3SK14 NEC 3sk21 3SK20 3sk30 3SK30A 2SK2132 3SK30A D,S,G1,G2 3SK33 LM 1011
Contextual Info: - 128 - H f m £ tt ffl « & m & vm * K V A £ Vos* m * (V) X fr * fê S l* IS P d /P c h (A) 1* (W) loss (max) (A) Vg s (V) W (Ta=25*C) 14 (min) (max) V d s (V) (V) (V) (min) (max) V d s (A) (A) (V) 9m (min) (S) { \ l f Id (A) Vd s (V) Id (A) HS SW MOS

2SK2227

Contextual Info: Voss = 450V, N-channel m TP SM P « b 2SK2403 2SK2404 Electrical characteristics at Ta = 25°C f*OS en Package m 2SK2406 & I 1 i Typ« No. -2 T C 450 130 VGS{0ffj typ/max at min to max Vqs = 10V (Q) P# m m m m Ciss m typ (ns) 1.0 30 3.5/4.5 0.8 300 80 3.0

2SJ32C

Abstract: 2SK14 2sk19 2SK2142 2sj320 2sj306 2SK142 2SK195 2SK2161
Contextual Info: SAtfm POWER MOS FETs 2 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

2sk3436

Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Contextual Info: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis

NPN Transistor 600V SC-62

Abstract: 2SK2632 2SK1413 SANYO BIPOLAR transistor pcp SANYO SC-62 2SK1924 2SK2623 2SK1412LS 2SK1461 2SK1923
Contextual Info: Large-signal Power M0SFETs 5 The Sanyo J-MOS series u tiliz e s Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for v irtu a lly any types of power electronic equipment, the UH Series, AP Series and

Contextual Info: SA/iYO T0-220FI LS (Ful 1 Isolation) Outline Series S a n y o ’ s new o u t l i n e T 0 - 2 2 0 F I ( F u l 1 i s o l a t i o n a j c .Dynamic: focus : perfect isolation t y p e ) h a s a wi de v a r i e t y o f p r o d u c t s . transi stoi-s Be i n g out of

KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION

2SK1411

Abstract: 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225
Contextual Info: STI Type: 2SK1358 Notes: Breakdown Voltage: 900 Continuous Current: 9 RDS on Ohm: 1.4 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.0 Gate Threshold min: 1.5 Gate Threshold max: 3.5 Resistance Switching ton: 80 Resistance Switching toff: 200 Resistance Switching ID: 4.0