a7f transistor
Abstract: 2N4427 BFR98 npn zg Transistor 2n4427 A-7-F
Contextual Info: r Z Z SCS-THO M SO N ^7# 2N4427 BFR98 VHF OSCILLATOR POWER AMPLIFIER DESCRIPTION The 2N4427 and BFR98 are silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. They are designed for VHF class A, B, or C amplifier and os cillator applications.
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2n4427bfr982n4427-bfr98a7f transistor+3npn zgtransistor 2n4427a-7-f
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2N4427
Abstract: BFR98 transistor 2N4427 2n4427-bfr98
Contextual Info: 2N4427 BFR98 VHF OSCILLATOR POWER AMPLIFIER DESCRIPTION The 2N4427 and BFR98 are silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. They are designed for VHF class A, B, or C amplifier and oscillator applications. TO-39 INTERNAL SCHEMATIC DIAGRAM
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Contextual Info: 3QE D • 0 Q 31 22 1 5 ■ ~T> -3 3 -0 3 SGS-THOMSON [»^ miOTFlFMOfOS 2N4427 BFR98 S G S-THOMSON -— — - VHF OSCILLATOR POWER AMPLIFIER DESC RIPTIO N The 2N4427 and BFR98 are silicon planar epitaxial NPN transistor in JedecTO-39 metal case. They are designed for VHF class A, B, or C amplifier and os
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4427B
Abstract: 2N4427 FR98 SGS-Thomson
Contextual Info: SGS-THOMSON 2 N 4427 B F R 98 R iiæ m iM Q iO g i VHF O SCILLATO R POW ER AM PLIFIER D E SC R IPTIO N The 2N4427 and BFR98 are silicon planar epitaxial NPN transistor in Je d e c T O -39 metal case. They are designed to r VH F class A, B, or C amplifier and o s
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2n4427bfr982n4427-bfr984427b+2fr98sgs-thomson
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BC207b
Abstract: BC113 SGS BC208A BC209B BC207A BF257 BC113 BC114 BC209 BC208 transistor
Contextual Info: Fairchild Sem iconductors Semiconductors Silicon Small Signal Transistors NPN Low Level, Low Noise Amplifier Transistors P lastic P ack ag e T 0 9 2 , T O IM REFERENCE TABLE Max Ratings Characteristics @ 25‘ C Code V c e o Pt o t Volts T a — 25*C mW
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bc11335289xbc11435z90c+13bc1156291abc20735292xbc207a35293hbc207bbc113 sgsbc208abc209bbf257bc209bc208 transistor
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C744
Abstract: BC301-6 cp409 SGS-ATES c426 BFY72 sgs c426 Transistor 2N3866 BC119 sgs-ates BFR97
Contextual Info: S G S -A T E S Semiconductors Transistors -N P N N P N Medium Po w er Transistors R EFEREN CE T A B L E 0.8 6* 6* «* 3* o u_ C ode BC119 BC300 BC301 BC302 BFR36 M ax P tot @ T * m b = 25 -C W 30 80 60 45 30 Max lc (A ) 1 7 7 7 0.3 @ lc (m A ) Min fr (MHz)
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bc11934546cbc30031624x+14bc30131625rbc302bfr3630946bbfr97c744bc301-6cp409sgs-ates c426bfy72sgs c426transistor 2n3866sgs-ates
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2N1613 fairchild
Abstract: TT 2222 npn BC119 2n2218 2B 2N915 2N2369 2N2369A 2N914 2n3054 BSX26
Contextual Info: Fairchild Sem iconductors Se m ico n d ti^ H n Silicon Small Signal Transistors NPN Silicon High Speed Saturated Switching Transistors M e ta l C a n T O IS R EFEREN CE T A B L E For medium speed - see General P u rp o se Section. C H A R A C T E R I S T IC S @ 25"C
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bsx2035250hbsx2635251f+122n91435252d2n236935253b2n2369a35254x2n1613 fairchildtt 2222 npnbc1192n2218 2b2n9152n3054
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PT8811
Abstract: PT8740 transistor pt4544 PT8828 RF Transistor S10-12 2N6095 SD1076 MRF510 MM1669 2N3563 REPLACEMENT
Contextual Info: cross reference liste d'équivalence THOMSON-CSF THOMSON-CSF pro d u ct line for RF pow er tran sisto rs has su cce ssfully cross referenced m any co m p e titive tran sisto r products. In m ost cases, these replacem ent tran sisto rs d ire ctly replace the co m p e titive pa rts for DC and RF p a ram eters in a ctu al operating system s. It is possible,
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bam202n5642b25-122n6082+162n6084msc2304th2304pt8809sd11342n5689pt8811pt8740transistor pt4544pt8828rf transistor s10-122n6095sd1076mrf510mm16692n3563 replacement
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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9033 transistor
Abstract: PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811
Contextual Info: 0.75. 4.2 GHz microwave transistors for class C operation O transistors hyperfréquences, classe C TYPE TH 1002 TH 1005 TH 1010 TH 2001 TH 2003 TH 2005 TH 2302 TH 2304 TH 2307 TH 3000 TH 3001 TH 3003 TH 3005 TH 4200 TH 4201 2 IM 4428 2N 4429 2N 4430 2N 4431
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302n6082bm80-12sd1416mm1601+16mrf631sd1144pt8549sd1214n50542n35539033 transistorpt88282n4932pt8740blw27blx66sd1315bly94mm1669pt8811
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BFY70
Abstract: PT8828 CM45-12A THB598 PT8811 BLY22 sd1451 MRF245 PT8710 PT9780
Contextual Info: wideband VHF - UHF class C for E C M and radio links applications applications large bande VHF-UHF, classe C, contre mesure et faisceaux hertziens PACKAGE TYPE C O NFIG. Pout Frequency Pin range W (W) (M Hz) Vcc (V) 1H0MS0N-CSF GP min (dB) m in (% ) m ax
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2n6082bm80-12sd1416mm1601+16mrf631sd1144pt8549sd1214n50542n3553bfy70pt8828cm45-12athb598pt8811bly22sd1451mrf245pt8710pt9780
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PT8740
Abstract: PT8811 replace for 2N918 PT9780 mrf245 THOMSON-CSF PRODUCTS transistor pt4544 PT9788 PT8710 PT8828
Contextual Info: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (M Hz) le Im A) C l2e C22b* (pF) l\IF @ (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72
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t8710sd12382n51262n918+162n5642bm100-28mm1603mrf633sd1145pt8717pt8740pt8811replace for 2n918pt9780mrf245thomson-csf productstransistor pt4544pt9788pt8710pt8828
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SGS-ATES c426
Abstract: ME6002 BFR97 SGS-Ates BC125 sgs-ates transistors ME6101 sgs c426 BC142 BC300
Contextual Info: M icro- Electronics Sem iconductors NPN Transistors N P N Medium Power Transistors R EFER EN C E T A B L E C426 30 BC125 BC142 BC300 min. 15 a l c mA (Ok I c fT Cob pF 150 40 25 19578D 66 150 40 200 150 40 120 25 12 — 76 67 0.5 150 120 — 19480B 19491G
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19578dbc12519480bbc142+1319491gbc30033425dbc30133426bbc302sgs-ates c426me6002bfr97sgs-atessgs-ates transistorsme6101sgs c426
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BF689
Abstract: 2N5651 BF272 2N5652 BF251 BFY82 BFY70 BF316 BF479 BFX36
Contextual Info: STI Type: BF200 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200 VCBO: 30 VCEO: 20 hFE min: 15 hFE max: hFE A: 3.0 VCE: VCE A: hfe: fT: 550 Case Style: TO-206AF/TO-72: Industry Type: BF200 STI Type: BF183 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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2sb504kpl 30092sb502bly34+6germaniumbf316absx122sd716, 2sb686 35w amplifiersbf197acy52
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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a4/10a5/62a5/105a1000+16aa100aa110aa111aa112aa113aa114fd6666 diodediode by1001n4q07ba100 diodeby164bb139bay38diode aa1191s184 diode1n82
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2N918
Abstract: SD1076 PT8811 MRF245 RF Transistor S10-12 PT8828 PT8710 sd-1076 PT9780 transistor pt4544
Contextual Info: 130. 175 MHz class C for FM mobile applications p\ communications mobiles FM, classe C TYPE PACKAGE CONFIG. V cc V .280 4LSL (B) XO-72 SL TO-117 SL .280 4LSL (B) .280 4LSL (B) CE CE CE CE CE 7,5 7,5 7,5 7,5 7,5 2N 4427 SD 1484-10 SD 1127 2N 6080 SD 1574
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bam2022n6082bm80-12sd1416+16mm1601mrf631sd1144pt8549sd1214n50542n918sd1076pt8811mrf245rf transistor s10-12pt8828pt8710sd-1076pt9780transistor pt4544
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SD1076
Abstract: MRF245 2n918 PT8811 BLY94 pt8710 PT9788 PT9780 SD1238 MRF510
Contextual Info: 2 - 30 MHz linear SSB applications applications linéaires BLU TYPE PACKAGE CONFIG. THOMSON-CSF V CC V Pout (PEP) Pin fo (W) (W) (MHz) Gp min (dB) IMD max (dB) 4LFL 4LFL 4LFL 4LFL CE CE CE CE 12,5 12,5 12,5 12,5 > > > > 20 50 75 100 30 30 30 30 0,63 1,6
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3570 1301
Abstract: MRF245 PT8828 ad 40282 PT9780 CM45-12A BLX66 pt8710 2N4932 2N5913
Contextual Info: 1 . 1000 MHz class A low noise for small signal applications classe A faible bruit petit signal TYPE È oc o Q. fT p t o t V B R C E O m in . PAC KAG E m ax. Im W ) (V ) (M H z ) THOMSON-CSF @ lc C l2« @ V c b Gp C22b* I m A ) (p F ) (V ) Gu m * «dB)
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2n918bfp92cb-2333570 1301+9mrf245pt8828ad 40282pt9780cm45-12ablx66pt87102n49322n5913
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MRF245
Abstract: CM45-12A BFS51 SD1451 J03055 2N6197 BLY22 SD1076 PT8740 PT8811
Contextual Info: 130. 175 MHz class C for FM mobile applications p\ com m unications m obiles FM, classe C TYPE PACKAGE CONFIG. V cc V .280 4LSL (B) XO-72 SL TO-117 SL .280 4LSL (B) .280 4LSL (B) CE CE CE CE CE 7,5 7,5 7,5 7,5 7,5 2N 4427 SD 1484-10 SD 1127 2N 6080 SD 1574
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xo-72o-1172n6082bm80-12+13sd1416mm1601mrf631mrf245cm45-12abfs51sd1451j030552n6197bly22sd1076pt8740pt8811
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2N915
Abstract: bf 697 bf459 transistor sgs c426 transistor 2n3053 2N2369 2N2369A 2N914 BC119 BSX20
Contextual Info: Fairchild Sem iconductors S e m ic o n d ti^ H n Silicon Small Signal Transistors N P N Silico n H igh Speed Saturated Sw itch in g Transistors M e tal C a n T O IS R EFEREN CE T A B L E For medium speed - see General P u rp o se Section. C H A R A C T E R I S T IC S @ 25"C
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bsx2035250hbsx2635251f+122n91435252d2n236935253b2n2369a35254x2n915bf 697bf459 transistorsgs c426transistor 2n3053bc119
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150 amp transistors
Abstract: 2n3055 tos BFR97 2n3055 sgs SGS-ATES fairchild semiconductors bfr36 BFR98 2N3054 2N6233
Contextual Info: Sem iconductors Fairchild Sem iconductors Silicon Power Transistors N PN Power Transistors Metal Can T05 REFERENCE T A B LE See small signal general purpose a m plifier and high voltage sections M AX r a | in g s C H A R A C TE R IS TIC S @25‘ C V CE(sat)
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bfx3435373h2n344035374f+1619107x2n161319145x2n171134312f2n1893150 amp transistors2n3055 tosbfr972n3055 sgssgs-atesfairchild semiconductorsbfr36bfr982n30542n6233
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