BFY72 Search Results

BC125

Abstract: 2N907 G700M BC232B 2N1410 kt384a LOW-POWER SILICON NPN 2N474 BFY33 3N35
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 2SC3246K 2SD1627 2SC3053 BFY72 2N2414 2N4968 V BR CEO 10 15 TP5451 40080 MPS3566 MPS3566 2S741 2S741 2S741A PET3704 PET3705 2N471 ~~1~~~ 20 25 - 30 35 D4C28 4C28 2N546 2N1252A 2N1252A 2N907 2N761 BC120 ~g~~g SE8oo1

Contextual Info: TO-39 Matal-Can Package Transistors NPN Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No. BFY72 ^C80 ^CEO ^EBO P0 (V) (V) (V) (W) Min Min Min @Tc=25°c 50 28 5 0.0 'cBO 'cM (A) (A) VC8 (V) Max 0.7 0.04 'ces (t*)

BO-407

Abstract: BFY72 BSX45 BSX45-10 BSX45-16 BSX45-6 BSX46 BSX46-10 BSX46-16 BSX46-6
Contextual Info: Errata Replaces page 43 in the Catalog Electrical Characteristics Ta=25°C, Unless Otherwise Specified Maximum Ratings Type No. BFY72 ^CBO (V) Min ^CEO ^EBO *CM 'cBO (V) Min PD (W) @Tc=25°c 'c (V) Min (A) (A) m Max 50 28 5 0.8 0.7 0.04 VCB (v) ' ces

2N244

Abstract: bfy5
Contextual Info: TO-39 METAL-CAN PACKAGE TRAN SISTO RS NPN Type No. tßO m Max VCB (V) hFE VCB0 VCEO VEBO (V) Min (V) Min (V) Min 2N3439 450 350 7 20.000 360 40 2N3742 300 300 7 0.200 200 lc •& VCE (mA) (V) Min Max (MA) (V) Max 0.75 15 10.0 1.00 200 30.000 10.0 50.000

2N1711 MOTOROLA

Abstract: DH3467CD equivalent 2N2219 2N2219A BSX45 bsy38 BSY39 SP3725 SP2222AF bsx46 equivalent SP2484F
Contextual Info: Transistors Cont. Discrete Devices Space Saving Devices Electrical Characteristics @ 25° C Maxim um Ratings Ambient P q Type Polarity One Both Side Sides mW mW VCE<Sat) @ Ic / lß H f e ic Vcb Volts VCE Volts VEB Volts Min/Max mA Volts m A/m A Frequency

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

F B0347

Abstract: b0349 BC184LB B0679 35S20 BDX330 B0242c f b0349 B0346 BD370-6
Contextual Info: Pro Electron Series in o PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET o Type No. BC107 BC107A Can Styl« TO-18 TO-18 VCES* v CBO (VI M in 50 50 v CEO (V) M in 45 45 v EB0 (V) M in 6 6 •c e s * 'CBO a InA) Max 15* 15* V CB IV) 50 50 H rh Ne 1 kH z *

2N2195

Abstract: 2N198 2N1987 BFY72 BSY52 BSY53 BSY54 CL150
Contextual Info: b3E J> CONTINENTAL DEVICE INDIA • 23033^4 QQQGOTl 2Tb ■ CDIL TO-39 METAL-CAN PACKAGE TRANSISTORS NPN Maximum Ratings Typ» V CBO V CEO V EBO *CBO No. (V) Min (V) M'm (V) Min (MA) Max 75 30 7 BSY53 0.010 V CB hFE 75 30 7 0.010 O 'c * (mA) V CE V C E (S a t)& V B E (S a t)° 'c

BC207b

Abstract: BC113 SGS BC208A BC209B BC207A BF257 BC113 BC114 BC209 BC208 transistor
Contextual Info: Fairchild Sem iconductors Semiconductors Silicon Small Signal Transistors NPN Low Level, Low Noise Amplifier Transistors P lastic P ack ag e T 0 9 2 , T O IM REFERENCE TABLE Max Ratings Characteristics @ 25‘ C Code V c e o Pt o t Volts T a — 25*C mW

C744

Abstract: BC301-6 cp409 SGS-ATES c426 BFY72 sgs c426 Transistor 2N3866 BC119 sgs-ates BFR97
Contextual Info: S G S -A T E S Semiconductors Transistors -N P N N P N Medium Po w er Transistors R EFEREN CE T A B L E 0.8 6* 6* «* 3* o u_ C ode BC119 BC300 BC301 BC302 BFR36 M ax P tot @ T * m b = 25 -C W 30 80 60 45 30 Max lc (A ) 1 7 7 7 0.3 @ lc (m A ) Min fr (MHz)

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

BF195 equivalent

Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products

2N1613 fairchild

Abstract: TT 2222 npn BC119 2n2218 2B 2N915 2N2369 2N2369A 2N914 2n3054 BSX26
Contextual Info: Fairchild Sem iconductors Se m ico n d ti^ H n Silicon Small Signal Transistors NPN Silicon High Speed Saturated Switching Transistors M e ta l C a n T O IS R EFEREN CE T A B L E For medium speed - see General P u rp o se Section. C H A R A C T E R I S T IC S @ 25"C

cs9011j

Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
Contextual Info: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •

BSy38

Abstract: Motorola* 2n708 2N1711 MOTOROLA DH3467CD 2N706 BSY39 SP3725 SP3725QDB tch98 2N706A
Contextual Info: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns

BC140 equivalent

Abstract: BCY34 2N328A BCY31 bcy59 equivalent BC109 MOTOROLA BCY25 DH3725CN bc108c equivalent 2N3133 MOTOROLA
Contextual Info: Discrete Devices Transistors C ont. Medium Current, High-Speed Amplifiers Maximum Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C VCB VCE VEB Volts Volts Volts hfe VcE(Sat) @ Ic/lß @ ic Min/Max mA Volts mA/mA ft MHz Min Cob pF tON tOFF

BSY86

Abstract: BSW65 BSY90 bsv82 BSW61 BSY87 BFY94 BSW39 BFY68 BFY67
Contextual Info: Medium Power Amplifiers and Switches TYPE POLA­ NO. RITY M A XIM UM RATINGS CASE H FE Pd IC VCEO mW (A) (V) min 40 100 40 40 300+ VCE(sat) IT Cob COM PLE­ IC VCE max min max M ENTARY max ("«A) (V) (V) (A) (M Hz) (PF) TYPE 120 300 150 - 150 150 150 0.1

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

1.0 k mef 250

Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Contextual Info: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

BC118

Abstract: BC125 ME6002 fairchild semiconductors fairchild to-106 ME6101 bc142 BFY72 BC537 BC537-10
Contextual Info: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors N P N General Purpose A m plifier and Sw itching Transistors P la s tic P a c k a g e T O 92, T O 105, T O 106 REFERENCE T A B L E See a lso lo w level and h ig h vo lta g e s e c tio n .

2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G

BSY39

Abstract: 2N697 equivalent 2N1420 equivalent BFY50 equivalent 2n697a 2n1613 equivalent 2N696 equivalent 2N1711 equivalent 2N1711 MOTOROLA 2N718 equivalent
Contextual Info: Transistors Coni. Discrete Devices General Purpose Amplifiers E lectrical Characteristics @ 25° C M ax im um Ratings Type Polarity PD VCE VEB V o lts V o lts V o lts A m b ie n t mW V c E ( S a t ) @ I c / lß H f e >C VCB M in/M ax mA V o lts m A/m A